arXiv subjects

C. Chapelier

Publications and source records attributed to C. Chapelier.

At least 19 recordsLinked to original sources

arXiv2024

Superconductivity of alpha-gallium probed on the atomic scale by normal and Josephson tunneling

We investigate superconducting gallium in its $\alpha$ phase using scanning tunneling microscopy and spectroscopy at temperatures down to about 100 mK. High-resolution tunneling spectroscopies using both superconducting and normal tips show that superconducting $\alpha$-Ga is accurately described by Bardeen-Cooper-Schrieffer theory, with a gap $\Delta_{\rm Ga}$ = 163 $\mu$eV on the $\alpha-$Ga(112) facet, with highly homogeneous spectra over the surface, including atomic defects and step edges. Using a superconducting Pb tip, we furthermore study the low-bias conductance features of the Josephson junction formed between tip and sample. The features are accurately described by dynamical Coulomb blockade theory, highlighting $\alpha-$Ga as a possible platform for surface science studies of mesoscopic superconductivity.

cond-mat.mes-hall↗

arXiv2023

Giant atomic swirl in graphene bilayers with biaxial heterostrain

The study of moir\'e engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moir\'e pattern controlling their electronic properties. The field entered a new era when it was found that adjusting the twist between two graphene layers led to strongly-correlated-electron physics and topological effects associated with atomic relaxation. Twist is now used routinely to adjust the properties of two-dimensional materials. Here, we investigate a new type of moir\'e superlattice in bilayer graphene when one layer is biaxially strained with respect to the other - so-called biaxial heterostrain. Scanning tunneling microscopy measurements uncover spiraling electronic states associated with a novel symmetry-breaking atomic reconstruction at small biaxial heterostrain. Atomistic calculations using experimental parameters as inputs reveal that a giant atomic swirl forms around regions of aligned stacking to reduce the mechanical energy of the bilayer. Tight-binding calculations performed on the relaxed structure show that the observed electronic states decorate spiraling domain wall solitons as required by topology. This study establishes biaxial heterostrain as an important parameter to be harnessed for the next step of moir\'e engineering in van der Waals multilayers.

cond-mat.mes-hall↗

arXiv2022

Probing thermalization and dynamics of high-energy quasiparticles in a superconducting nanowire by scanning critical current microscopy

Besides its fundamental interest, understanding the dynamics of pair breaking in superconducting nanostructures is a central issue to optimize the performances of superconducting devices such as qubits or photon detectors. However, despite substantial research efforts, these dynamics are still not well understood as this requires experiments in which quasiparticles are injected in a controlled fashion. Until now, such experiments have employed solid-state tunnel junctions with a fixed tunnel barrier. Here we use instead a cryogenic scanning tunnelling microscope to tune independently the energy and the rate of quasiparticle injection through, respectively, the bias voltage and the tunnelling current. For high energy quasiparticles, we observe the reduction of the critical current of a nanowire and show it is mainly controlled by the injected power and, marginally, by the injection rate. Our results prove a thermal mechanism for the reduction of the critical current and unveil the rapid dynamics of the generated hot spot.

cond-mat.supr-con↗

arXiv2020

Heterostrain rules the flat-bands in magic-angle twisted graphene layers

The moiré of twisted graphene bilayers can generate flat bands in which charge carriers do not posses enough kinetic energy to escape Coulomb interactions with each other leading to the formation of novel strongly correlated electronic states. This exceptionally rich physics relies on the precise arrangement between the layers.We survey published Scanning Tunnelling Microscope (STM) measurements to prove that near the magic angle, native heterostrain, the relative deformations between the layers, dominates twist in determining the flat bands. This is demonstrated at large doping where electronic correlations have a weak effect and where we also show that tip-induced strain can have a strong influence. In the opposite situation of low doping, we find that electronic correlation further normalize the flat bands in a way that strongly depends on experimental details.

cond-mat.mes-hall↗

arXiv2019

Measuring the Berry phase of graphene from wavefront dislocations in Friedel oscillations

Electronic band structures dictate the mechanical, optical and electrical properties of crystalline solids. Their experimental determination is therefore of crucial importance for technological applications. While the spectral distribution in energy bands is routinely measured by various techniques, it is more difficult to access the topological properties of band structures such as the Berry phase γ. It is usually thought that measuring the Berry phase requires applying external electromagnetic forces because these allow realizing the adiabatic transport on closed trajectories along which quantum mechanical wave-functions pick up the Berry phase. In graphene, the anomalous quantum Hall effect results from the Berry phase γ = π picked up by massless relativistic electrons along cyclotron orbits and proves the existence of Dirac cones. Contradicting this belief, we demonstrate that the Berry phase of graphene can be measured in absence of any external magnetic field. We observe edge dislocations in the Friedel oscillations formed at hydrogen atoms chemisorbed on graphene. Following Nye and Berry in describing these topological defects as phase singularities of complex fields, we show that the number of additional wave-fronts in the dislocation is a real space measurement of the pseudo spin winding, i.e. graphene's Berry phase. Since the electronic dispersion can also be retrieved from Friedel oscillations, our study establishes the electronic density as a powerful observable to determine both the dispersion relation and topological properties of wavefunctions. This could have profound consequences for the study of the band-structure topology of relativistic and gapped phases in solids.

cond-mat.mes-hall↗

arXiv2019

Quantum critical scaling of the conductivity tensor at the metal-insulator transition in Nb$_{1-x}$Ti$_{x}$N

In contrast to the Landau paradigm, a metal-insulator transition (MIT), driven purely by competition between itinerance and localization and unaccompanied by any conventional (e.g, magnetic) order-disorder instabilities, admits no obvious local order parameter. Here, we present a detailed analysis of the quantum criticality in magneto-transport data on the alloy Nb$_{1-x}$Ti$_{x}$N across a Ti-doping-driven a MIT. We demonstrate, for the first time, clear and novel quantum criticality reflected in the full conductivity tensor across the MIT. Wide ranging, comprehensive accord with recent theoretical predictions strongly suggests that these unanticipated findings are representative of a continuous MIT of the band-splitting type, rather than a conventional Anderson disorder or a "pure" correlation-driven first-order Mott type.

cond-mat.str-el↗

arXiv2018

Microwave response and electrical transport studies of disordered s wave superconductor: NbN thin films

It is now well known that the properties of the disordered s wave superconductors can deviate significantly from the prediction of standard Bardeen-Cooper-Schrieffer (BCS) theory. By measuring the temperature dependence of the resonance frequency, $f_0$, of microwave resonators made from disordered NbTiN and TiN thin films, at low temperatures, below half of the superconducting critical temperature, $T_c$, Driessen et al. \cite{driessen2012PRL} demonstrated that $f_0$ vanishes faster than predicted from the BCS theory. Here, we report on the temperature dependence of $f_0$ of microwave resonators made from disordered NbN thin films at higher temperatures--- typically from 0.4 to 0.8$T_c$. In this temperature range, we demonstrate that $f_0$ vanishes slower than predicted from the BCS theory. We discuss the possible role of electronic inhomogeneity and possibility of appearing a pseudogap-like feature. We also discuss the possibility of a faster downturn of the superfluid density, $n_s$, near $T_c$, resembling a Berezinski--Kosterlitz--Thoules (BKT) type transition.

cond-mat.supr-con↗

arXiv2018

Electronic spectrum of twisted graphene layers under heterostrain

We demonstrate that stacking layered materials allows a novel type of strain engineering where each layer is strained independently, which we call heterostrain. We combine detailed structural and spectroscopic measurements with tight-binding calculations to show that small uniaxial heterostrain suppresses Dirac cones and leads to the emergence of flat bands in twisted graphene layers (TGLs). Moreover, we demonstrate that heterostrain reconstructs much more severely the energy spectrum of TGLs than homostrain for which both layers are strained identically ; a result which should apply to virtually all van der Waals structure opening exciting possibilities for straintronics with 2D materials.

cond-mat.mes-hall↗

arXiv2017

The role of Coulomb interaction in superconducting NbTiN thin films

We report on the superconducting properties of Nb$_{1-x}$Ti$_x$N thin films of thickness $\sim$ 10 nm, with different Ti fraction $x$ in the range $ 0 \leq x \leq 0.5$, deposited by high temperature chemical vapor deposition. In this parameter range, we observe that the superconducting critical temperature ($T_c$) increases with $x$. Our analysis, in accordance with both McMillan's and Finkelstein's theories, shows that disorder-enhanced Coulomb interaction decreases with $x$, leading to an increase of $T_c$.

cond-mat.supr-con↗

arXiv2017

Epitaxial electrical contact to graphene on SiC

Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a single growth step. This method derives from the discovery reported here of the growth of few graphene layers on a metallic carbide by thermal annealing of a carbide forming metallic film on SiC in high vacuum. We exploit the combined effect of edge-contact and partially-covalent surface epitaxy between graphene and the metallic carbide to fabricate devices in which low contact-resistance and Josephson effect are observed. Implementing this approach could significantly simplify the realization of large-scale graphene circuits.

physics.app-ph↗

arXiv2016

Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ($T_c$ $\sim$ 16.5 K) and largest gap among conventional superconductors. In its thin-film form, the $T_c$ of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin film (below 50 nm) with high $T_c$. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than previously reported, characterized by a Ioffe-Regel ($k_F$$\ell$) parameter of $\sim$ 14. Accordingly we observe $T_c$ $\sim$ 17.06 K (point of 50% of normal state resistance), the highest value reported so far for films of thickness below 50 nm, indicating that HTCVD could be particularly useful for growing high quality NbN thin films.

cond-mat.supr-con↗

arXiv2015

High field termination of a Cooper-pair insulator

We conducted a systematic study of the disorder dependence of the termination of superconductivity, at high magnetic fields (B), of amorphous indium oxide films. Our lower disorder films show conventional behavior where superconductivity is terminated with a transition to a metallic state at a well-defined critical field, Bc2. Our higher disorder samples undergo a B-induced transition into a strongly insulating state, which terminates at higher B's forming an insulating peak. We demonstrate that the B terminating this peak coincides with Bc2 of the lower disorder samples. Additionally we show that, beyond this field, these samples enter a different insulating state in which the magnetic field dependence of the resistance is weak. These results provide crucial evidence for the importance of Cooper-pairing in the insulating peak regime.

cond-mat.supr-con↗

arXiv2014

Induced Superconductivity in Graphene Grown on Rhenium

We report a new way to strongly couple graphene to a superconductor. The graphene monolayer has been grown directly on top of a superconducting Re(0001) thin film and characterized by scanning tunneling microscopy and spectroscopy. We observed a moiré pattern due to the mismatch between Re and graphene lattice parameters that we have simulated with ab initio calculations. The density of states around the Fermi energy appears to be position dependent on this moiré pattern. Tunneling spectroscopy performed at 50 mK shows that the superconducting behavior of graphene on Re is well described by the Bardeen-Cooper-Schrieffer theory and stands for a very good interface between the graphene and its metallic substrate.

cond-mat.mes-hall↗

arXiv2013

Electrodynamic response and local tunnelling spectroscopy of strongly disordered superconducting TiN films

We have studied the electrodynamic response of strongly disordered superconducting TiN films using microwave resonators, where the disordered superconductor is the resonating element in a high- quality superconducting environment of NbTiN. We describe the response assuming an effective pair-breaking mechanism modifying the density of states, and compare this to local tunnelling spectra obtained using scanning tunnelling spectroscopy. For the least disordered film (kFl = 8.7, Rs = 13 Ω), we find good agreement, whereas for the most disordered film (kFl = 0.82, Rs = 4.3 kΩ), there is a strong discrepancy, which signals the breakdown of a model based on uniform properties.

cond-mat.supr-con↗

arXiv2010

Localization of preformed Cooper-pairs in disordered superconductors

The most profound effect of disorder on electronic systems is the localization of the electrons transforming an otherwise metallic system into an insulator. If the metal is also a superconductor then, at low temperatures, disorder can induce a dramatic transition from a superconducting into an insulating state. An outstanding question is whether the route to insulating behavior proceeds via the direct localization of Cooper pairs or, alternatively, by a two-step process in which the Cooper pairing is first destroyed followed by the standard localization of single electrons. Here we address this question by studying the local superconducting gap of a highly disordered, amorphous, superconductor by means of scanning tunneling spectroscopy. Our measurements reveal that, in the vicinity of the superconductor-insulator transition, the coherence peaks in the one-particle density of states disappear while the superconducting gap remains intact indicating the presence of localized Cooper pairs. Our results provide the first direct evidence that the transition in our system is driven by Cooper pair localization.

cond-mat.supr-con↗

arXiv2010

Pseudogap in a thin film of a conventional superconductor

A superconducting state is characterized by the gap in the electronic density of states which vanishes at the superconducting transition temperature Tc. It was discovered that in high temperature superconductors a noticeable depression in the density of states still remains even at temperatures above Tc; this feature being called pseudogap. Here we show that a pseudogap exists in a conventional superconductor: ultrathin titanium nitride films over a wide range of temperatures above Tc. Our study reveals that this pseudogap state is induced by superconducting fluctuations and favored by two-dimensionality and by the proximity to the transition to the insulating state. A general character of the observed phenomenon provides a powerful tool to discriminate between fluctuations as the origin of the pseudogap state, and other contributions in the layered high temperature superconductor compounds.

cond-mat.supr-con↗

arXiv2008

Disorder-Induced Inhomogeneities of the Superconducting State Close to the Superconductor-Insulator Transition

Scanning tunneling spectroscopy at very low temperature on homogeneously disordered superconducting Titanium Nitride thin films reveals strong spatial inhomogeneities of the superconducting gap $Δ$ in the density of states. Upon increasing disorder, we observe suppression of the superconducting critical temperature $T_c$ towards zero, enhancement of spatial fluctuations in $Δ$, and growth of the $Δ/T_c$ ratio. These findings suggest that local superconductivity survives across the disorder-driven superconductor-insulator transition.

cond-mat.mes-hall↗

arXiv2006

Tunneling Spectroscopy and Vortex Imaging in Boron-Doped Diamond

We present the first scanning tunneling spectroscopy study of single-crystalline boron doped diamond. The measurements were performed below 100 mK with a low temperature scanning tunneling microscope. The tunneling density of states displays a clear superconducting gap. The temperature evolution of the order parameter follows the weak coupling BCS law with $Δ(0)/k_B T_c \simeq 1.74$. Vortex imaging at low magnetic field also reveals localized states inside the vortex core that are unexpected for such a dirty superconductor.

cond-mat.supr-con↗