arXiv subjects

C. Deibel

Publications and source records attributed to C. Deibel.

28 records · Page 2Linked to original sources

arXiv2008

Bipolar Charge Transport in Poly(3-hexyl thiophene)/Methanofullerene Blends: A Ratio Dependent Study

We investigated the charge carrier mobility in pristine poly(3-hexyl thiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) blend devices by applying the time resolved photoconductivity experiment in dependence on the donor:acceptor ratio. We observe a bipolar transport in all studied samples ranging from pure polymer to polymer:fullerene with 90% PCBM content. For the ratios P3HT:PCBM 1:4 and 1:1 we observe two transit times in the electron current transients, as well as hole double transients for P3HT:PCBM 1:2. We find high hole and electron mobilities in the order of 10^(-3) - 10^(-2) cm^2/Vs for a concentration of 90% PCBM in the blend.

cond-mat.mtrl-sci↗

arXiv2008

Polaron Recombination in Pristine and Annealed Bulk Heterojunction Solar Cells

We determined the dominant polaron recombination loss mechanism in pristine and annealed polythiophene:fullerene blend solar cells by applying the photo-induced charge extraction by linearly increasing voltage (photo-CELIV) method in dependence on temperature. In pristine samples, we find a strongly temperature dependent bimolecular polaron recombination rate, which is reduced as compared to the Langevin theory. For the annealed sample, we observe a polaron decay rate which follows a third order of carrier concentration almost temperature independently.

cond-mat.mtrl-sci↗

arXiv2008

Influence of Charge Carrier Mobility on the Performance of Organic Solar Cells

The power conversion efficiency of organic solar cells based on donor--acceptor blends is governed by an interplay of polaron pair dissociation and bimolecular polaron recombination. Both processes are strongly dependent on the charge carrier mobility, the dissociation increasing with faster charge transport, with raised recombination losses at the same time. Using a macroscopic effective medium simulation, we calculate the optimum charge carrier mobility for the highest power conversion efficiency, for the first time accounting for injection barriers and a reduced Langevin-type recombination. An enhancement of the charge carrier mobility from $10^{-8}$m$^2$/Vs for state of the art polymer:fullerene solar cells to about $10^{-6}$m$^2$/Vs, which yields the maximum efficiency, corresponds to an improvement of only about 20% for the given parameter set.

cond-mat.mtrl-sci↗

arXiv2007

Spectroscopy of electronic defect states in Cu(In, Ga)(S, Se)$_2$-based heterojunctions and Schottky diodes under damp-heat exposure

The changes of defect characteristics induced by accelerated lifetime tests on the heterostructure n-ZnO/i-ZnO/CdS/Cu(In, Ga)(S, Se)$_2$/Mo relevant for photovoltaic energy conversion are investigated. We subject heterojunction and Schottky devices to extended damp heat exposure at 85$^{\circ}$C ambient temperature and 85% relative humidity for various time periods. In order to understand the origin of the pronounced changes of the devices, we apply current--voltage and capacitance--voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. The fill factor and open-circuit voltage of test devices are reduced after prolonged damp heat treatment, leading to a reduced energy conversion efficiency. We observe the presence of defect states in the vicinity of the CdS/chalcopyrite interface. Their activation energy increases due to damp heat exposure, indicating a reduced band bending at the Cu(In, Ga)(S, Se)$_2$ surface. The Fermi-level pinning at the buffer/chalcopyrite interface, maintaining a high band bending in as-grown cells, is lifted due to the damp-heat exposure. We also observe changes in the bulk defect spectra due to the damp-heat treatment.

cond-mat.mtrl-sci↗

arXiv2007

Band Bending Independent of Surface Passivation in ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ Heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky Contacts

We have employed admittance spectroscopy and deep-level transient spectroscopy in order to investigate the electronic properties of ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky contacts. Our work concentrates on the origin of an energy-distributed defect state commonly found in these systems. The activation energy of the defect state addressed continuously shifts upon air annealing or damp-heat treatment and is a valuable measure of the degree of band bending in Cu(In,Ga)(S,Se)$_2$-based junctions. We demonstrate that the band bending within the Cu(In,Ga)(S,Se)$_2$ layer, reported in the literature to become minimal after air exposure, returns after the formation of either a Schottky contact or a heterojunction. The earlier phenomenon turns out to be independent of a surface passivation due to the CdS bath deposition.

cond-mat.mtrl-sci↗

arXiv2007

Nuclear Structure Relevant to Neutrinoless Double Beta Decay: 76Ge and 76Se

The possibility of observing neutrinoless double beta decay offers the opportunity of determining the neutrino mass IF the nuclear matrix element were known. Theoretical calculations are uncertain and measurements of the occupations of valence orbits by nucleons active in the decay can be important. The occupation of valence neutron orbits in the ground states of 76Ge and 76Se were determined by precisely measuring cross sections for both neutron-adding and removing transfer reactions. Our results indicate that the Fermi surface is much more diffuse than in theoretical (QRPA) calculations. We find that the populations of at least three orbits change significantly between these two ground states while in the calculations the changes are confined primarily to one orbit.

nucl-ex↗

arXiv2007

Experimental evidence of a natural parity state in $^{26}$Mg and its impact to the production of neutrons for the s process

We have studied natural parity states in $^{26}$Mg via the $^{22}$Ne($^{6}$Li,d)$^{26}$Mg reaction. Our method significantly improves the energy resolution of previous experiments and, as a result, we report the observation of a natural parity state in $^{26}$Mg. Possible spin-parity assignments are suggested on the basis of published $γ$-ray decay experiments. The stellar rate of the $^{22}$Ne($α$,$γ$)$^{26}$Mg reaction is reduced and may give rise to an increase in the production of s-process neutrons via the $^{22}$Ne($α$,n)$^{25}$Mg reaction.

nucl-ex↗

arXiv2007

High-j single-particle neutron states outside the N=82 core

The behaviour of the i13/2 and h9/2 single-neutron strength was studied with the (4He,3He) reaction on 138Ba, 140Ce, 142Nd and 144Sm targets at a beam energy of 51 MeV. The separation between the single-neutron states i13/2 and h9/2 was measured in N =83 nuclei with changing proton number. To this end spectroscopic factors for states populated in high-l transfer were extracted from the data. Some mixing of l=5 and 6 strength was observed with states that are formed by coupling the f7/2 state to the 2+ and 3- vibrational states and the mixing matrix elements were found to be remarkably constant. The centroids of the strength indicate a systematic change in the energies of the i13/2 and h9/2 single-neutron states with increasing proton number that is in quantitative agreement with the effects expected from the tensor interaction.

nucl-ex↗

arXiv2007

Pair correlations in nuclei involved in neutrinoless double beta decay: 76Ge and 76Se

Precision measurements were carried out to test the similarities between the ground states of 76Ge and 76Se. The extent to which these two nuclei can be characterized as consisting of correlated pairs of neutrons in a BCS-like ground state was studied. The pair removal (p,t) reaction was measured at the far forward angle of 3 degrees. The relative cross sections are consistent (at the 5% level) with the description of these nuclei in terms of a correlated pairing state outside the N=28 closed shells with no pairing vibrations. Data were also obtained for 74Ge and 78Se.

nucl-ex↗

arXiv2006

Charge Transport Properties of a Metal-free Phthalocyanine Discotic Liquid Crystal

Discotic liquid crystals can self-align to form one-dimensional semiconducting wires, many tens of microns long. In this letter, we describe the preparation of semiconducting films where the stacking direction of the disc-like molecules is perpendicular to the substrate surface. We present measurements of the charge carrier mobility, applying temperature-dependent time-of-flight transient photoconductivity, space-charge limited current measurements, and field-effect mobility measurements. We provide experimental verification of the highly anisotropic nature of semiconducting films of discotic liquid crystals, with charge carrier mobilities of up to 2.8x10$^{-3}$cm$^2$/Vs. These properties make discotics an interesting choice for applications such as organic photovoltaics.

cond-mat.mtrl-sci↗