arXiv subjects

C. Didiot

Publications and source records attributed to C. Didiot.

11 recordsLinked to original sources

arXiv2016

Local resilience of the $1T$-TiSe$_2$ charge density wave to Ti self-doping

In Ti-intercalated self-doped $1T$-TiSe$_2$ crystals, the charge density wave (CDW) superstructure induces two nonequivalent sites for Ti dopants. Recently, it has been shown that increasing Ti doping dramatically influences the CDW by breaking it into phase-shifted domains. Here, we report scanning tunneling microscopy and spectroscopy experiments that reveal a dopant-site dependence of the CDW gap. Supported by density functional theory, we demonstrate that the loss of the longrange phase coherence introduces an imbalance in the intercalated-Ti site distribution and restrains the CDW gap closure. This local resilient behavior of the $1T$-TiSe$_2$ CDW reveals a novel mechanism between CDW and defects in mutual influence.

cond-mat.mtrl-sci↗

arXiv2016

Short-range phase coherence and origin of the 1T-TiSe2 charge density wave

The impact of variable Ti self-doping on the 1T-TiSe2 charge density wave (CDW) is studied by scanning tunneling microscopy. Supported by density functional theory we show that agglomeration of intercalated-Ti atoms acts as preferential nucleation centers for the CDW that breaks up in phaseshifted CDW domains whose size directly depends on the intercalated-Ti concentration and which are separated by atomically-sharp phase boundaries. The close relationship between the diminution of the CDW domain size and the disappearance of the anomalous peak in the temperature dependent resistivity allows to draw a coherent picture of the 1T-TiSe2 CDW phase transition and its relation to excitons.

cond-mat.mtrl-sci↗

arXiv2015

STM microscopy of the CDW in 1T-TiSe2 in the presence of single atom defects

We present a detailed low temperature scanning tunneling microscopy study of the commensurate charge density wave (CDW) in 1$T$-TiSe$_2$ in the presence of single atom defects. We find no significant modification of the CDW lattice in single crystals with native defects concentrations where some bulk probes already measure substantial reductions in the CDW phase transition signature. Systematic analysis of STM micrographs combined with density functional theory modelling of atomic defect patterns indicate that the observed CDW modulation lies in the Se surface layer. The defect patterns clearly show there are no 2$H$-polytype inclusions in the CDW phase, as previously found at room temperature [Titov A.N. et al, Phys. Sol. State 53, 1073 (2011). They further provide an alternative explanation for the chiral Friedel oscillations recently reported in this compound [J. Ishioka et al., Phys. Rev. B 84, 245125, (2011)].

cond-mat.mtrl-sci↗

arXiv2015

Excited States at Interfaces of a Metal-Supported Ultrathin Oxide Film

We report layer-resolved measurements of the \textit{unoccupied} electronic structure of ultrathin MgO films grown on Ag(001). The metal-induced gap states at the metal/oxide interface, the oxide band gap as well as a surface core exciton involving an image-potential state of the vacuum are revealed through resonant Auger spectroscopy of the Mg $KL_{23}L_{23}$ Auger transition. Our results demonstrate how to obtain new insights on \textit{empty} states at interfaces of metal-supported ultrathin oxide films.

cond-mat.mtrl-sci↗

arXiv2014

Doping nature of native defects in 1T-TiSe2

The transition metal dichalcogenide 1T-TiSe2 is a quasi two-dimensional layered material with a charge density wave (CDW) transition temperature of TCDW 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature dependent resistivity and strongly perturbate the CDW phase. Here we study the structural and doping nature of such native defects combining scanning tunneling microscopy/spectroscopy and ab initio calculations. The dominant native single atom dopants we identify in our single crystals are intercalated Ti atoms, Se vacancies and Se substitutions by residual iodine and oxygen.

cond-mat.mtrl-sci↗

arXiv2010

Influence of elastic scattering on the measurement of core-level binding energy dispersion in x-ray photoemission spectroscopy

In the light of recent measurements of the C 1s core level dispersion in graphene [Nat. Phys. 6, 345 (2010)], we explore the interplay between the elastic scattering of photoelectrons and the surface core level shifts with regard to the determination of core level binding energies in Au(111) and Cu3Au(100). We find that an artificial shift is created in the binding energies of the Au 4f core levels, that exhibits a dependence on the emission angle, as well as on the spectral intensity of the core level emission itself. Using a simple model, we are able to reproduce the angular dependence of the shift and relate it to the anisotropy in the electron emission from the bulk layers. Our results demonstrate that interpretation of variation of the binding energy of core-levels should be conducted with great care and must take into account the possible influence of artificial shifts induced by elastic scattering.

cond-mat.other↗

arXiv2009

Dramatic effective mass reduction driven by strong electronic correlations

We present angle-resolved photoemission experiments on 1T-TiSe2 at temperatures ranging from 13K to 288K. The data evidence a dramatic renormalization of the conduction band below 100K, whose origin can be explained with the exciton condensate phase model. The renormalization translates into a substantial effective mass reduction of the dominant charge carriers and can be directly related to the low temperature downturn of the resistivity of 1T-TiSe2. This observation is in opposition to the common belief that strong interactions produce heavier quasiparticles through an increased effective mass.

cond-mat.str-el↗

arXiv2009

Temperature dependent photoemission on 1T-TiSe2: Interpretation within the exciton condensate phase model

The charge density wave phase transition of 1T-TiSe2 is studied by angle-resolved photoemission over a wide temperature range. An important chemical potential shift which strongly evolves with temperature is evidenced. In the framework of the exciton condensate phase, the detailed temperature dependence of the associated order parameter is extracted. Having a mean-field-like behaviour at low temperature, it exhibits a non-zero value above the transition, interpreted as the signature of strong excitonic fluctuations, reminiscent of the pseudo-gap phase of high temperature superconductors. Integrated intensity around the Fermi level is found to display a trend similar to the measured resistivity and is discussed within the model.

cond-mat.str-el↗

arXiv2008

Temperature dependence of the excitonic insulator phase model in 1T-TiSe2

Recently, detailed calculations of the excitonic insulator phase model adapted to the case of 1\textit{T}-TiSe$_2$ have been presented. Through the spectral function theoretical photoemission intensity maps can be generated which are in very good agreement with experiment [Phys. Rev. Lett. {\bf 99}, (2007) 146403]. In this model, excitons condensate in a BCS-like manner and give rise to a charge density wave, characterized by an order parameter. Here, we assume an analytical form of the order parameter, allowing to perform temperature dependent calculations. The influence of this order parameter on the electronic spectral function, to be observed in photoemission spectra, is discussed. The resulting chemical potential shift and an estimation of the resistivity are also shown.

cond-mat.str-el↗

arXiv2008

Spontaneous exciton condensation in 1T-TiSe2: a BCS-like approach

Recently strong evidence has been found in favor of a BCS-like condensation of excitons in 1\textit{T}-TiSe$_2$. Theoretical photoemission intensity maps have been generated by the spectral function calculated within the excitonic condensate phase model and set against experimental angle-resolved photoemission spectroscopy data. Here, the calculations in the framework of this model are presented in detail. They represent an extension of the original excitonic insulator phase model of Jérome \textit{et al.} [Phys. Rev. {\bf 158}, 462 (1967)] to three dimensional and anisotropic band dispersions. A detailed analysis of its properties and further comparison with experiment are also discussed

cond-mat.str-el↗

arXiv2006

Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature

We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experiments show that concomitantly with the structural phase transition, a metal-insulator phase transition takes place. In agreement with theoretical predictions, the (root-3xroot-3)R30 ground state is interpreted as the experimental realization of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice.

cond-mat.mtrl-sci↗