arXiv subjects

C. E. Ekuma

Publications and source records attributed to C. E. Ekuma.

18 recordsLinked to original sources

arXiv2020

Electronic and vibrational spectroscopy of miscible MgO-ZnO ternary alloys

The ordered structure of MgO-ZnO alloy system is a versatile tunable optical material promising for diverse optoelectronic applications. However, isovalent and isostructural alloy compositions of MgO-ZnO are generally unstable at ambient conditions. Using state-of-the-art \textit{ab initio} evolutionary simulations, we predict and study the properties of stable phases of MgO-ZnO. We establish the dynamical stability of the predicted crystal structures through the phonon and Raman spectroscopy. Detailed analyses of two of the most stable structures reveal highly tunable properties that could be explored for photonic and optical applications.

cond-mat.mtrl-sci↗

arXiv2019

Surface passivated and encapsulated ZnO atomic layer by high-$κ$ ultrathin MgO layer

Atomically transparent vertically aligned ZnO-based van der Waals material have been developed by surface passivation and encapsulation with atomic layers of MgO using materials by design; the physical properties investigated. The passivation and encapsulation led to a remarkable improvement in optical and electronic properties. The valence-band offset $ΔE_v$ between MgO and ZnO, ZnO and MgO/ZnO, and ZnO and MgO/ZnO/MgO heterointerfaces are determined to be 0.37 $\pm$0.02, -0.05$\pm$0.02, and -0.11$\pm$0.02 eV, respectively; the conduction-band offset $ΔE_c$ is deduced to be 0.97$\pm$0.02, 0.46$\pm$0.02, and 0.59$\pm$0.02 eV indicating straddling type-I in MgO and ZnO, and staggering type-II heterojunction band alignment in ZnO and the various heterostructures. The band-offsets and interfacial charge transfer are used to explain the origin of $n$-type conductivity in the superlattices. Enhanced optical absorption due to carrier confinement in the layers demonstrates that MgO is an excellent high-$κ$ dielectric gate oxide for encapsulating ZnO-based optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2018

Two-particle excitations under coexisting electron interaction and disorder

We study the combined impact of random disorder and electron-electron, and electron-hole interactions on the absorption spectra of a three-dimensional Hubbard Hamiltonian. We determine the single-particle Green's function within the typical medium dynamical cluster approximation. We solve the Bethe-Salpeter equation (BSE) to obtain the dynamical conductivity. Our results show that increasing disorder strength at a given interaction strength leads to decreased absorption with the dynamical conductivity, systematically going to zero at all frequencies, a fingerprint of a correlation-mediated electron localization. Surprisingly, our data reveal that taking into account the effects of electron-hole interactions through the BSE significantly changes the oscillator strength with a concomitant reduction in the critical disorder strengths $W_c^U$. We attribute this behavior to enhanced quantum correction induced by electron-hole interactions.

cond-mat.str-el↗

arXiv2018

Optical absorption in disordered monolayer molybdenum disulfide

We explore the combined impact of sulfur vacancies and electronic interactions on the optical properties of monolayer MoS$_2$. First, we present a generalized Anderson-Hubbard Hamiltonian that accounts for both randomly distributed sulfur vacancies and the presence of dielectric screening within the material. Second, we parameterize this energy-dependent Hamiltonian from first-principles calculations based on density functional theory and the Green function and screened Coulomb (GW) method. Third, we apply a first-principles-based many-body typical medium method to determine the single-particle electronic structure. Fourth, we solve the Bethe-Salpeter equation to obtain the charge susceptibility $χ$ with its imaginary part being related to the absorbance $\mathcal{A}$. Our results show that an increased vacancy concentration leads to decreased absorption both in the band continuum and from exciton states within the band gap. We also observe increased absorption below the band gap threshold and present an expression, which describes Lifshitz tails, in excellent qualitative agreement with our numerical calculations. This latter increased absorption in the $1.0$--$2.5$\,eV makes defect engineering of potential interest for solar cell applications.

cond-mat.dis-nn↗

arXiv2017

Electronic structure and X-ray spectroscopy of Cu$_{2}$MnAl$_{1-x}$Ga$_{x}$

We explore the electronic and related properties of Cu$_{2}$MnAl$_{1-x}$Ga$_{x}$ with a first-principles, relativistic multiscattering Green function approach. We discuss our results in relation to existing experimental data and show that the electron-core hole interaction is essential for the description of the optical spectra especially in describing the X-ray absorption and magnetic circular dichroism spectra at the L$_{2,3}$ edges of Cu and Mn.

cond-mat.dis-nn↗

arXiv2015

Metal-Insulator-Transition in a Weakly interacting Disordered Electron System

The interplay of interactions and disorder is studied using the Anderson-Hubbard model within the typical medium dynamical cluster approximation. Treating the interacting, non-local cluster self-energy ($Σ_c[{\cal \tilde{G}}](i,j\neq i)$) up to second order in the perturbation expansion of interactions, $U^2$, with a systematic incorporation of non-local spatial correlations and diagonal disorder, we explore the initial effects of electron interactions ($U$) in three dimensions. We find that the critical disorder strength ($W_c^U$), required to localize all states, increases with increasing $U$; implying that the metallic phase is stabilized by interactions. Using our results, we predict a soft pseudogap at the intermediate $W$ close to $W_c^U$ and demonstrate that the mobility edge ($ω_ε$) is preserved as long as the chemical potential, $μ$, is at or beyond the mobility edge energy.

cond-mat.dis-nn↗

arXiv2015

Finite Cluster Typical Medium Theory for Disordered Electronic Systems

We use the recently developed typical medium dynamical cluster (TMDCA) approach~[Ekuma \etal,~\textit{Phys. Rev. B \textbf{89}, 081107 (2014)}] to perform a detailed study of the Anderson localization transition in three dimensions for the Box, Gaussian, Lorentzian, and Binary disorder distributions, and benchmark them with exact numerical results. Utilizing the nonlocal hybridization function and the momentum resolved typical spectra to characterize the localization transition in three dimensions, we demonstrate the importance of both spatial correlations and a typical environment for the proper characterization of the localization transition in all the disorder distributions studied. As a function of increasing cluster size, the TMDCA systematically recovers the re-entrance behavior of the mobility edge for disorder distributions with finite variance, obtaining the correct critical disorder strengths, and shows that the order parameter critical exponent for the Anderson localization transition is universal. The TMDCA is computationally efficient, requiring only a small cluster to obtain qualitative and quantitative data in good agreement with numerical exact results at a fraction of the computational cost. Our results demonstrate that the TMDCA provides a consistent and systematic description of the Anderson localization transition.

cond-mat.dis-nn↗

arXiv2015

Competing magnetic states, disorder, and the magnetic character of Fe3Ga4

The physical properties of metamagnetic Fe$_3$Ga$_4$ single crystals are investigated to explore the sensitivity of the magnetic states to temperature, magnetic field, and sample history. The data reveal a moderate anisotropy in the magnetization and the metamagnetic critical field along with features in the specific heat at the magnetic transitions $T_1=68$ K and $T_2=360$ K. Both $T_1$ and $T_2$ are found to be sensitive to the annealing conditions of the crystals suggesting that disorder affects the competition between the ferromagnetic (FM) and antiferromagnetic (AFM) states. Resistivity measurements reveal metallic transport with a sharp anomaly associated with the transition at $T_2$. The Hall effect is dominated by the anomalous contribution which rivals that of magnetic semiconductors in magnitude ($-5 μΩ$ cm at 2 T and 350 K) and undergoes a change of sign upon cooling into the low temperature FM state. The temperature and field dependence of the Hall effect indicate that the magnetism is likely to be highly itinerant in character and that a significant change in the electronic structure accompanies the magnetic transitions. We observe a contribution from the topological Hall effect in the AFM phase suggesting a non-coplanar contribution to the magnetism. Electronic structure calculations predict an AFM ground state with a wavevector parallel to the crystallographic $c$-axis preferred over the experimentally measured FM state by $\approx$ 50 meV per unit cell. However, supercell calculations with a small density of Fe-antisite defects introduced tend to stabilize the FM over the AFM state indicating that antisite defects may be the cause of the sensitivity to sample synthesis conditions.

cond-mat.str-el↗

arXiv2014

Study of off-diagonal disorder using the typical medium dynamical cluster approximation

We generalize the typical medium dynamical cluster approximation (TMDCA) and the local Blackman, Esterling, and Berk (BEB) method for systems with off-diagonal disorder. Using our extended formalism we perform a systematic study of the effects of non-local disorder-induced correlations and of off-diagonal disorder on the density of states and the mobility edge of the Anderson localized states. We apply our method to the three-dimensional Anderson model with configuration dependent hopping and find fast convergence with modest cluster sizes. Our results are in good agreement with the data obtained using exact diagonalization, and the transfer matrix and kernel polynomial methods.

cond-mat.dis-nn↗

arXiv2014

A Typical Medium Dynamical Cluster Approximation for the Study of Anderson Localization in Three Dimensions

We develop a systematic typical medium dynamical cluster approximation that provides a proper description of the Anderson localization transition in three dimensions (3D). Our method successfully captures the localization phenomenon both in the low and large disorder regimes, and allows us to study the localization in different momenta cells, which renders the discovery that the Anderson localization transition occurs in a cell-selective fashion. As a function of cluster size, our method systematically recovers the re-entrance behavior of the mobility edge and obtains the correct critical disorder strength for Anderson localization in 3D.

cond-mat.dis-nn↗

arXiv2014

Electronic Structure and Spectra of CuO

We report the electronic structure of monoclinic CuO as obtained from first principles calculations utilizing density functional theory plus effective Coulomb interaction (DFT + U) method. In contrast to standard DFT calculations taking into account electronic correlations in DFT + U gave antiferromagnetic insulator with energy gap and magnetic moment values in good agreement with experimental data. The electronic states around the Fermi level are formed by partially filled Cu 3$d_{x^2-y^2}$ orbitals with significant admixture of O 2$p$ states. Theoretical spectra are calculated using DFT + U electronic structure method and their comparison with experimental photoemission and optical spectra show very good agreement.

cond-mat.str-el↗

arXiv2013

Re-examining the electronic structure of germanium: A first-principle study

We report results from an efficient, robust, ab-initio method for self-consistent calculations of electronic and structural properties of Ge. Our non-relativistic calculations employed a generalized gradient approximation (GGA) potential and the linear combination of atomic orbitals (LCAO) formalism. The distinctive feature of our computations stem from the use of Bagayoko-Zhao-Williams-Ekuma-Franklin (BZW-EF) method. Our results are in agreement with experimental ones where the latter are available. In particular, our theoretical, indirect band gap of 0.65 eV, at the experimental lattice constant of 5.66 Å, is in excellent agreement with experiment. Our predicted, equilibrium lattice constant is 5.63 Å, with a corresponding indirect band gap of 0.65 eV and a bulk modulus of 80 GPa. We also calculated the effective masses in various directions with respect to the $Γ$ point.

cond-mat.mtrl-sci↗

arXiv2012

Physical Properties of $Ba_2 Mn_2 Sb_2 O$ Single Crystals

We report both experimental and theoretical investigations of the physical properties of Ba$_\mathrm{2}$Mn$_\mathrm{2}$Sb$_\mathrm{2}$O single crystals. This material exhibits a hexagonal structure with lattice constants: a = 4.7029(15) Å and c = 19.9401(27) Å, as obtained from powder X-ray diffraction measurements, and in agreement with structural optimization through density functional theory (DFT) calculations. The magnetic susceptibility and specific heat show anomalies at T$_\mathrm{N}$ = 60 K, consistent with antiferromagnetic ordering. However, the magnitude of T$_\mathrm{N}$ is significantly smaller than the Curie-Weiss temperature ($\mid$$\mathrm{Θ_{CW}}$$\mid$ $\approx$ 560 K), suggesting a magnetic system of reduced dimensionality. The temperature dependence of both the in-plane and out-of-plane resistivity changes from an activated at $T$ $>$ T$_\mathrm{x}$ $\sim$ 200 K to a logarithmic at $T$ $<$ T$_\mathrm{x}$. Correspondingly, the magnetic susceptibility displays a bump at T$_\mathrm{x}$. DFT calculations at the DFT + U level support the experimental observation of an antiferromagnetic ground state.

cond-mat.str-el↗

arXiv2012

First Principle Local Density Approximation Description of the Electronic Properties of Ferroelectric Sodium Nitrite

The electronic structure of the ferroelectric crystal, NaNO$_2$, is studied by means of first-principles, local density calculations. Our ab-initio, non-relativistic calculations employed a local density functional approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). Following the Bagayoko, Zhao, Williams, method, as enhanced by Ekuma, and Franklin (BZW-EF), we solved self-consistently both the Kohn-Sham equation and the equation giving the ground state charge density in terms of the wave functions of the occupied states. We found an indirect band gap of 2.83 eV, from W to R. Our calculated direct gaps are 2.90, 2.98, 3.02, 3.22, and 3.51 eV at R, W, X, Γ, and T, respectively. The band structure and density of states show high localization, typical of a molecular solid. The partial density of states shows that the valence bands are formed only by complex anionic states. These results are in excellent agreement with experiment. So are the calculated densities of states. Our calculated electron effective masses of 1.18, 0.63, and 0.73 mo in the Γ-X, Γ-R, and Γ-W directions, respectively, show the highly anisotropic nature of this material.

cond-mat.mtrl-sci↗

arXiv2012

Electronic, structural, and elastic properties of metal nitrides XN (X = Sc, Y): A first principle study

We utilized a simple, robust, first principle method, based on basis set optimization with the BZW-EF method, to study the electronic and related properties of transition metal mono-nitrides: ScN and YN. We solved the KS system of equations self-consistently within the linear combination of atomic orbitals (LCAO) formalism. It is shown that the band gap and low energy conduction bands, as well as elastic and structural properties, can be calculated with a reasonable accuracy when the LCAO formalism is used to obtain an optimal basis. Our calculated, indirect electronic band gap (E$^\mathrm{Γ-X}_g$) is 0.79 (LDA) and 0.88 eV (GGA) for ScN. In the case of YN, we predict an indirect band gap (E$^\mathrm{Γ-X}_g$) of 1.09 (LDA) and 1.15 eV (GGA). We also calculated the equilibrium lattice constants, the bulk moduli (B$_{o}$), effective masses, and elastic constants for both systems. Our calculated values are in excellent agreement with experimental ones where the latter are available.

cond-mat.mtrl-sci↗

arXiv2012

First principle electronic, structural, elastic, and optical properties of strontium titanate

We report self-consistent ab-initio electronic, structural, elastic, and optical properties of cubic SrTiO$_{3}$ perovskite. Our non-relativistic calculations employed a generalized gradient approximation (GGA) potential and the linear combination of atomic orbitals (LCAO) formalism. The distinctive feature of our computations stem from solving self-consistently the system of equations describing the GGA, using the Bagayoko-Zhao-Williams (BZW) method. Our results are in agreement with experimental ones where the later are available. In particular, our theoretical, indirect band gap of 3.24 eV, at the experimental lattice constant of 3.91 Å, is in excellent agreement with experiment. Our predicted, equilibrium lattice constant is 3.92 Å, with a corresponding indirect band gap of 3.21 eV and bulk modulus of 183 GPa.

cond-mat.mtrl-sci↗

arXiv2012

Ab-initio Electronic and Structural Properties of Rutile Titanium Dioxide

Ab-initio, self-consistent electronic energy bands of rutile TiO2 are reported within the local density functional approximation (LDA). Our first principle, non-relativistic and ground state calculations employed a local density functional approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). Within the framework of the Bagayoko, Zhao, and Williams (BZW) method, we solved self-consistently both the Kohn-Sham equation and the equation giving the ground state charge density in terms of the wave functions of the occupied states. Our calculated band structure shows that there is significant O2p-Ti3d hybridization in the valence bands. These bands are well separated from the conduction bands by an indirect band gap of 2.95 eV, from Γ to R. Consequently, this work predicts that rutile TiO2 is an indirect band gap material, as all other gaps from our calculations are larger than 2.95 eV. We found a slightly larger, direct band gap of 3.05 eV, at the Γ point, in excellent agreement with experiment. Our calculations reproduced the peaks in the measured conduction and valence bands densities of states, within experimental uncertainties. We also calculated electron effective mass. Our structural optimization led to lattice parameters of 4.65 Å and 2.97 Å for a_{0} and c_{0}, respectively with a u parameter of 0.3051 and a bulk modulus of 215 GPa.

cond-mat.mtrl-sci↗

arXiv2010

Ab Initio Local Density Approximation Description of the Electronic Properties of Zinc Blende Cadmium Sulfide (zb-CdS)

Ab-initio, self-consistent electronic energy bands of zinc blende CdS are reported within the local density functional approximation (LDA). Our first principle, non-relativistic and ground state calculations employed a local density potential and the linear combination of atomic orbitals (LCAO). Within the framework of the Bagayoko, Zhao, and Williams (BZW) method, we solved self-consistently both the Kohn-Sham equation and the equation giving the ground state density in terms of the wave functions of the occupied states. Our calculated, direct band gap of 2.39 eV, at the point, is in accord with experiment. Our calculation reproduced the peaks in the conduction and valence bands density of states, within experimental uncertainties. The calculated electron effective mass agrees with experimental findings.

cond-mat.mtrl-sci↗