arXiv subjects

C. F. Ramirez-Gutierrez

Publications and source records attributed to C. F. Ramirez-Gutierrez.

7 recordsLinked to original sources

arXiv2020

Comments on "Superstatistical properties of the one-dimensional Dirac oscillator" by Abdelmalek Boumali et al

In this comment, we discuss the mathematical formalism used in Boumali et al. (2020) which describes the superstatistical thermal properties of a one-dimensional Dirac oscillator. In particular, we point out the importance of maintaining the Legendre structure unaltered to ensure an accurate description of the thermodynamic observables when a Tsallis-like statistical description is assumed. Also, we remark that all the negative poles have to take into account to calculate the Gibbs--Boltzmann partition function. Our findings show that the divergences obtained by the authors in the Helmholtz free energy, which are propagated to the other thermal properties, are a consequence of an incomplete partition function. Moreover, we prove that the restrictions over the $q$-parameter are no needed if an appropriate partition function describes the system.

cond-mat.stat-mech↗

arXiv2020

Optical intersubband properties of a core-shell semiconductor-topological insulator quantum dot described by $θ$-Electrodynamics

The optical properties of a spherical topological insulator embedded concentrically in a single-electron system consisting of a core-shell GaAs quantum dot are analyzed, when the system is under a uniform external magnetic field. The topological insulator's magnetoelectric response is computed in the effective framework of $θ$-electrodynamics, which allows analytical calculations for the induced electric and magnetic potentials by Green's Function method. The GaAs Hamiltonian is constructed in the effective-mass approximation, and its corresponding Schrödinger equation is numerically solved through the Lagrange-mesh method. We compute the total absorption coefficients and refractive index changes given by the non-linear iterative density matrix formalism up to third order. Our results show that the presence of the magnetoelectric material causes new dipolar transitions otherwise not allowed. Also, an enhancement of the photon absorption is found when the incident light polarization is oriented parallel to the external magnetic field, in comparison with perpendicular polarization. Moreover, we report an appreciable blue shift in the optical functions when the values of the $θ$-parameter are increased. These results can be useful for indirect experimental measures of the magnetoelectric polarizability which is proportional to the QED fine-structure constant $α$.

cond-mat.mes-hall↗

arXiv2019

Impact of a topological defect and Rashba spin-orbit interaction on the thermo-magnetic and optical properties of a 2D semiconductor quantum dot with Gaussian confinement

In this paper, we examine the effect of introducing a conical disclination on the thermal and optical properties of a two dimensional GaAs quantum dot in the presence of a uniform and constant magnetic field. In particular, our model consists of a single-electron subject to a confining Gaussian potential with a spin-orbit interaction in the Rashba approach. We compute the specific heat and the magnetic susceptibility from the exact solution of the Schrödinger equation via the canonical partition function, and it is shown that the peak structure of the Schottky anomaly is linearly displaced as a function of the topological defect. We found that such defect and the Rashba coupling modify the values of the temperature and magnetic field in which the system behaves as a paramagnetic material. Remarkably, the introduction of a conical disclination in the quantum dot relaxes the selection rules for the electronic transitions when an external electromagnetic field is applied. This creates a new set of allowed transitions causing the emergence of semi-suppressed resonances in the absorption coefficient as well as in the refractive index changes which are blue-shifted with respect to the regular transitions for a quantum dot without the defect.

cond-mat.mes-hall↗

arXiv2018

Porosity and roughness determination of porous silicon thin films by genetic algorithms

The problem of determining the porous silicon (PSi) optical constants, thickness, porosity, and surface quality using just reflectance data is board employing evolutionary algorithms. The reflectance measurements were carried out of PSi films over crystalline silicon (c-Si) substrate, and the fitting procedure was done by using a genetic algorithm. The PSi is treated as a mixture of c-Si and air. Therefore, its effective optical constants can be correlated with the porosity trough effective medium approximation (EMA). The results show that genetic fitting has a good match with the experimental measurements (Near UV-Vis reflectance) and the thickness obtained by scanning electron microscopy (SEM).

cond-mat.mtrl-sci↗

arXiv2017

A comparative study on heat capacity, magnetization and magnetic susceptibility for a GaAs quantum dot with asymmetric confinement

In this work, thermal and magnetic properties for an electron with cylindrical confinement in presence of external electric and magnetic fields have been investigated. We found that the corresponding time-independent Schrödinger equation can be separated into the product of the radially symmetric and an axial equation. Moreover, we have obtained a quasi-exact expression for the energy spectrum of the system in terms of the exact solutions for the radial equation and an approximation up to first order for the axial equation. We have calculated the well-known thermal and magnetic properties as the heat capacity, magnetization and the magnetic susceptibility via the canonical partition function. We found that our results for thermal and magnetic properties differ significantly from results previously obtained by others authors (by Gumber et. al.). Moreover, our results are in agreement with the diamagnetic properties of GaAs.

cond-mat.mes-hall↗

arXiv2016

Modeling the photoacoustic signal during the porous silicon formation

Within this work, the kinetics of the growing stage of porous silicon (PS) during the etching process was studied using the photoacoustic technique. A p-type Si with low resistivity was used as a substrate. An extension of Rosencwaig and Gersho model is proposed in order to analyze the temporary changes that take place in the amplitude of the photoacoustic signal during the PS growth. The solution of the heat equation takes into account the modulated laser beam, the changes in the reflectance of the PS-backing heterostructure, the electrochemical reaction, and the Joule effect as thermal sources. The model includes the time-dependence of the sample thickness during the electrochemical etching of PS. The changes in the reflectance are identified as the laser reflections in the internal layers of the system. The reflectance is modeled by an additional sinusoidal-monochromatic light source and its modulated frequency is related to the velocity of the PS growth. The chemical reaction and the DC components of the heat sources are taken as an average value from the experimental data. The theoretical results are in agreement with the experimental data and hence provided a method to determine variables of the PS growth, such as the etching velocity and the thickness of the porous layer during the growing process.

cond-mat.mtrl-sci↗

arXiv2016

In situ photoacoustic characterization for porous silicon growing: detection principles

There are a few methodologies to monitoring the Porous Silicon (PS) formation in-situ. One of these methodologies is photoacoustic. Previous works that reported the use of photoacoustic to study the PS formation do not provide the physical explanation of the origin of the signal. In this paper, a physical explanation is provided of the origin of the photoacoustic signal during the PS etching. The incident modulated radiation and changes in the reflectance are taken as thermal sources. In this paper, a useful methodology is proposed to determine the etching rate, porosity, and refractive index of a PS film by the determination of the sample thickness, using SEM images. This method was developed by carrying out two different experiments using the same anodization conditions. The first experiment consisted of the growth of samples with different etching times to prove the periodicity of the photoacoustic signal and the second considered the growth samples using three different wavelengths that are correlated with the period of the photoacoustic signal. The last experiment showed that the period of the photoacoustic signal is proportional to the laser wavelength.

cond-mat.mtrl-sci↗