arXiv subjects

C. Ferdeghini

Publications and source records attributed to C. Ferdeghini.

At least 55 records · Page 3Linked to original sources

arXiv2006

Role of charge doping and lattice distortions in codoped Mg_{1-x}(AlLi)_{x}B_2 compounds

We prepared a series of Mg_{1-x}(AlLi)_{x}B_2 samples with 0≤x≤0.45 in order to compensate with Li the electron doping induced by Al. Structural characterization by means of neutron and X-ray diffraction confirms that Li enters the MgB2 structure even though in an amount less than nominal one. We performed susceptibility, resistivity and specific heat measurements. Vibrational properties were also investigated by means of Raman spectroscopy. We compare these results with those obtained on a homologous series of Mg_{1-x}Al_{x}B_2 samples. The systematic success of scaling the relevant properties with the Al content rather than with the electron doping suggests that lattice deformation plays an important role in tuning the superconducting properties.

cond-mat.supr-con↗

arXiv2005

Observation of the Crossover from Two-Gap to Single-Gap Superconductivity through Specific Heat Measurements in Neutron Irradiated MgB2

We report specific heat measurements in neutron irradiated MgB2 samples, for which the critical temperature has been suppressed down to 8.5 K, but the superconducting transition remains extremely sharp, indicative of a defect structure extremely homogeneous. Our results demonstrate that the two-gap feature is evident in the temperature range above 21 K, while the single-gap superconductivity is well established as a bulk property not associated to local disorder fluctuations when Tc is decreased down to 11 K.

cond-mat.supr-con↗

arXiv2005

Magnetoresistivity in MgB2 as a probe of disorder in p- and s-bands

In this paper we present normal state magnetoresistivity data of magnesium diboride epitaxial thin films with different levels of disorder, measured at 42K in magnetic fields up to 45 Tesla. Disorder was introduced in a controlled way either by means of neutron irradiation or by carbon doping. From a quantitative analysis of the magnetoresistivity curves with the magnetic field either parallel or perpendicular to the plane of the film, we extract the ratio of the scattering times in p- and s-bands. We demonstrate that the undoped unirradiated thin film has p scattering times smaller than s ones; upon irradiation, both bands become increasingly more disordered; eventually the highly irradiated sample (neutron fluence 7.7X1017 cm-2) and the C-doped sample have comparable scattering times in the two types of bands. This description of the effect of disorder in the two kinds of bands on transport is consistent with the residual resistivity values and with the temperature dependence of the resistivity.

cond-mat.supr-con↗

arXiv2005

Enhanced flux pinning in neutron irradiated MgB2

We study the effect of neutron irradiation on the critical current density Jc of isotopically pure polycrystalline Mg11B2 samples. For fluences in the range 1017-1018 cm-2, Jc is enhanced and its dependence on magnetic field is significantly improved: we demonstrate that, in this regime, point-like pinning centers are effectively introduced in the system proportionally to the neutron fluence. Instead, for larger fluences, a strong suppression of the critical temperature accompanied by a decrease of both the upper critical field Bc2 and Jc is found.

cond-mat.supr-con↗

arXiv2004

Upper Critical Fields up to 60T in Dirty Magnesium Diboride Thin Films

Upper critical fields of several magnesium diboride thin films were measured up to 28 T at the Grenoble High Magnetic Field Laboratory (GHMFL) in Grenoble and up to 60 T at the Laboratoire National des Champs Magnetiques Pulses (LNCMP) in Toulouse. The samples were prepared both by pulsed laser deposition (PLD) and hybrid physical chemical vapour deposition (HPCVD) technique; they have critical temperatures between 29 and 39 K and normal state resistivities between 5 and 250 μohmcm; one of them has been intentionally doped with carbon. The measured critical fields were exceptionally high; we obtained the record value of 52 T at 4.2 K in the parallel orientation. In contrast with the BCS predictions, no saturation in Hc2 at low temperature was observed. Furthermore, films with a wide range of resistivity values showed similar critical fields, suggesting that in a two band system resistivity and Hc2 are not trivially linked. The high Hc2 values seem to be related with the expanded c-axis. The structure of one of the samples was carefully investigated with X-ray diffraction at European Synchrotron Radiation Facility (ESRF) in Grenoble.

cond-mat.supr-con↗

arXiv2004

Neutron Irradiation of Mg11B2 : From the Enhancement to the Suppression of Superconducting Properties

In this letter we present the effect of neutron irradiation up to fluences of 3.9 1019 n/cm2 on the superconducting properties of MgB2. In order to obtain a disorder structure homogeneously distributed, the experiment was carried out on bulk samples prepared with the 11B isotope. Up to fluences of 1018 n/cm2 the critical temperature is slightly diminished (36 K) and the superconducting properties are significantly improved; the upper critical field is increased from 13.5 T to 20.3 T at 12 K and the irreversibility field is doubled at 5 K. For larger neutron fluences the critical temperature is suppressed down to 12 K and the superconducting properties come out strongly degraded.

cond-mat.supr-con↗

arXiv2004

Epitaxial MgB2 thin films on ZrB2 buffer layers: structural characterization by synchrotron radiation

Structural and superconducting properties of magnesium diboride thin films grown by pulsed laser deposition on zirconium diboride buffer layers were studied. We demonstrate that the ZrB2 layer is compatible with the MgB2 two step deposition process. Synchrotron radiation measurements, in particular anomalous diffraction measurements, allowed to separate MgB2 peaks from ZrB2 ones and revealed that both layers have a single in plane orientation with a sharp interface between them. Moreover, the buffer layer avoids oxygen contamination from the sapphire substrate. The critical temperature of this film is near 37.6 K and the upper critical field measured at Grenoble High Magnetic Field Laboratory up to 20.3 T is comparable with the highest ones reported in literature.

cond-mat.supr-con↗

arXiv2004

Critical Field of Al-Doped MgB2 Samples: Correlation with the Suppression of Sigma-Band Gap

In this Letter, the study of the effect of Al substitution on the upper critical field, Bc2, in AlxMg1-xB2 samples is presented. We find a straightforward correlation between Bc2 and the sigma-band gap, Delta_sigma, evaluated by point-contact measurements. Up to x=0.2 Bc2 can be well described within a clean limit model and its decrease with x is directly related to the suppression of Delta_sigma. For larger doping we observed the crossover to the dirty regime driven mostly by the strong decrease of Delta_sigma rather than by the increase of the sigma-band scattering rate

cond-mat.supr-con↗

arXiv2004

High-field superconductivity in alloyed MgB2 thin films

We investigated the effect of alloying on the upper critical field $H_{c2}$ in 12 $MgB_2$ films, in which disorder was introduced by growth, carbon doping or He-ion irradiation, finding a significant $H_{c2}$ enhancement in C-alloyed films, and an anomalous upward curvature of $H_{c2}(T)$. Record high values of $H_{c2}^{\perp}(4.2) \simeq 35T$ and $H_{c2}\|(4.2) \simeq 51T$ were observed perpendicular and parallel to the ab plane, respectively. The temperature dependence of $H_{c2}(T)$ is described well by a theory of dirty two-gap superconductivity. Extrapolation of the experimental data to T=0 suggests that $H_{c2}\|(0)$ approaches the paramagnetic limit of $\sim 70T$.

cond-mat.supr-con↗

arXiv2003

Critical Field of MGB2 : Crossover from Clean to Dirty Regimes

We have studied the upper critical field, Bc2, in poly-crystalline MgB2 samples in which disorder was varied in a controlled way to carry selectively p and s bands from clean to dirty limit. We have found that the clean regime survives when p bands are dirty and s bands are midway between clean and dirty. In this framework we can explain the anomalous behaviour of Al doped samples, in which Bc2 decreases as doping increases.

cond-mat.supr-con↗

arXiv2003

Effect of two bands on critical fields in MgB2 thin films with various resistivity values

Upper critical fields of four MgB2 thin films were measured up to 28 Tesla at Grenoble High Magnetic Field Laboratory. The films were grown by Pulsed Laser Deposition and showed critical temperatures ranging between 29.5 and 38.8 K and resistivities at 40 K varying from 5 to 50 mWcm. The critical fields in the perpendicular direction turned out to be in the 13-24 T range while they were estimated to be in 42-57 T the range in ab-planes. In contrast to the prediction of the BCS theory, we did not observe any saturation at low temperatures: a linear temperature dependence is exhibited even at lowest temperatures at which we made the measurements. Moreover, the critical field values seemed not to depend on the normal state resistivity value. In this paper, we analyze these data considering the multiband nature of superconductivity in MgB2 We will show how the scattering mechanisms that determine critical fields and resistivity can be different.

cond-mat.supr-con↗

arXiv2003

High critical fields in MgB2 thin films with various resistivity values

In this paper, we analyze the upper critical field of four MgB2 thin films, with different resistivity (between 5 to 50 mWcm) and critical temperature (between 29.5 to 38.8 K), measured up to 28 Tesla. In the perpendicular direction the critical fields vary from 13 to 24 T and we can estimate 42-57 T range in other direction. We observe linear temperature dependence even at low temperatures without saturation, in contrast to BCS theory. Considering the multiband nature of the superconductivity in MgB2, we conclude that two different scattering mechanisms influence separately resistivity and critical field. In this framework, resistivity values have been calculated from Hc2(T) curves and compared with the measured ones.

cond-mat.supr-con↗

arXiv2003

Point-Contact Spectroscopy in MgB_2: from Fundamental Physics to Thin-Film Characterization

In this paper we highlight the advantages of using point-contact spectroscopy (PCS) in multigap superconductors like MgB_2, both as a fundamental research tool and as a non-destructive diagnostic technique for the optimization of thin-film characteristics. We first present some results of crucial fundamental interest obtained by directional PCS in MgB_2 single crystals, for example the temperature dependence of the gaps and of the critical fields and the effect of a magnetic field on the gap amplitudes. Then, we show how PCS can provide useful information about the surface properties of MgB_2 thin films (e.g. Tc, gap amplitude(s), clean or dirty-limit conditions) in view of their optimization for the fabrication of tunnel and Josephson junctions for applications in superconducting electronics.

cond-mat.supr-con↗

arXiv2003

Pulsed Laser Deposition of epitaxial titanium diboride thin films

Epitaxial titanium diboride thin films have been deposited on sapphire substrates by Pulsed Laser Ablation technique. Structural properties of the films have been studied during the growth by Reflection High Energy Electron Diffraction (RHEED) and ex-situ by means of X-ray diffraction techniques; both kinds of measurements indicate a good crystallographic orientation of the TiB2 film both in plane and along the c axis. A flat surface has been observed by Atomic Force Microscopy imaging. Electrical resistivity at room temperature resulted to be five times higher than the value reported for single crystals. The films resulted to be also very stable at high temperature, which is very promising for using this material as a buffer layer in the growth of magnesium diboride thin films.

cond-mat.mtrl-sci↗

arXiv2003

Upper critical fields of MgB2 thin films

Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 mWcm and Tc from 29.5 to 38.8 K were measured up to 28 T. Hc2(T) curves present a linear behavior towards low temperatures. Very high critical field values have been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms.

cond-mat.supr-con↗

arXiv2002

Effect of annealing on the physical properties of RuSr2GdCu2O8 sintered samples and a discussion about magnetic measurements performed by SQUID magnetometer

In this paper we present the physical characterization of sintered RuSr2GdCu2O8 samples prepared with different procedures. In particular we show how the physical properties are affected by the final step, which is one week annealing in flowing Oxygen, and how extensively the annealing procedure affects the visibility of the superconducting behaviour. Moreover, we analyse the complexity of the d.c. magnetic measurements performed on such type of samples below the superconducting transition and the possibility to decode them.

cond-mat.supr-con↗

arXiv2002

Angular dependence of magnetoresistivity in c-oriented MgB2 thin film

The anisotropy of MgB2 is still under debate: its value, strongly dependent on the sample and on the measuring method, ranges between 1.2 and 13. In this work we present our results on a MgB2 c-oriented superconducting thin film. To evaluate the anisotropy, we followed two different approaches. Firstly, magnetoresistivity was measured as a function of temperature at selected magnetic fields applied both parallel and perpendicular to the c-axis; secondly, we measured magnetoresistivity at selected temperatures and magnetic fields, varying the angle q between the magnetic field and the c-axis. The anisotropy estimated from the ratio between the upper critical fields parallel and perpendicular to the c-axis and the one obtained in the framework of the scaling approach within the anisotropic Ginzburg-Landau theory are different but show a similar trend in the temperature dependence. The obtained results are compared and discussed in the light of the two-band nature of MgB2. A comparison between critical fields in thin films and single crystal is also performed.

cond-mat.supr-con↗

arXiv2002

Growth methods of c-axis oriented MgB2 thin films by pulsed laser deposition

High quality MgB2 thin films have been obtained by pulsed laser deposition both on MgO and on Al2O3 substrates using different methods. In the standard two-step procedure, an amorphous precursor layer is deposited at room temperature starting both from stoichiometric target and from boron target: after this first step, it is annealed in magnesium atmosphere in order to crystallize the superconducting phase. The so obtained films show a strong c-axis orientation, evidenced by XRD analysis, a critical temperature up to 38 K and very high critical fields along the basal planes, up to 22T at 15K. Also an in situ one step technique for the realization of superconducting MgB2 thin films has been developed. In this case, the presence of an argon buffer gas during deposition is crucial and we observe a strong dependence of the quality of the deposited film on the background gas pressure. The influence of the Ar atmosphere has been confirmed by time and space-resolved spectroscopy measurements on the emission spectrum of the plume. The Ar pressure modifies strongly the plasma kinetics by promoting excitation and ionization of the plume species, especially of the most volatile Mg atoms, increasing their internal energy.

cond-mat.supr-con↗