arXiv subjects

C. Friedrich

Publications and source records attributed to C. Friedrich.

18 recordsLinked to original sources

arXiv2025

Correlation effects in two-dimensional MX_2 and MA_2Z_4 (M= Nb, Ta; X= S, Se, Te; A=Si, Ge; Z=N, P) cold metals: Implications for device applications

Cold metals, characterized by their distinctive band structures, hold promise for innovative electronic devices such as tunnel diodes with negative differential resistance (NDR) effect and field-effect transistors (FETs) with sub-60 mV/dec subthreshold swing (SS). In this study, we employ the GW approximation and HSE06 hybrid functional to investigate the correlation effects on the electronic band structure of two-dimensional (2D) cold metallic materials, specifically focusing on MX_2 and MA_2Z_4 (M=Nb, Ta; X=S, Se, Te; A=Si, Ge; Z= N, P) compounds in 1H structure. These materials exhibit a unique band structure with an isolated metallic band around the Fermi energy, denoted as W_m, as well as two energy gaps: the internal gap E^I_g below the Fermi level and the external gap E^E_g above the Fermi level. These three electronic structure parameters play a decisive role in determining the current-voltage (I-V) characteristics of tunnel diodes, the nature of the NDR effect, and the transfer characteristics and SS value of FETs. Our calculations reveal that both GW and HSE06 methods yield consistent electronic structure properties for all studied compounds. We observed a consistent increase in both internal and external band gaps, as well as metallic bandwidths, across all pn-type cold metal systems. Notably, the internal band gap E^I_g exhibits the most substantial enhancement, highlighting the sensitivity of these materials to correlation effects. In contrast, the changes in the metallic bandwidth W_m and external band gap E^E_g are relatively modest. These findings offer valuable insights for designing and optimizing cold metal-based devices. Materials like NbSi_2N_4, NbGe_2N_4, and TaSi_2N_4 show particular promise for high-performance NDR tunnel diodes and sub-60 mV/dec SS FETs.

cond-mat.mtrl-sci↗

arXiv2022

Multiplet Effects in the Electronic Correlation of One-Dimensional Magnetic Transition-Metal Oxides on Metals

We use the constrained random phase approximation (cRPA) method to calculate the Hubbard $U$ parameter in four one-dimensional magnetic transition metal atom oxides of composition XO$_2$ (X = Mn, Fe, Co, Ni) on Ir(100). In addition to the expected screening of the oxide, i.e., a significant reduction of the $U$ value by the presence of the metal substrate, we find a strong dependence on the electronic configuration (multiplet) of the X($d$) orbital. Each particular electronic configuration attained by atom X is dictated by the O ligands, as well as by the charge transfer and hybridization with the Ir(100) substrate. We find that MnO$_2$ and NiO$_2$ chains exhibit two different screening regimes, while the case of CoO$_2$ is somewhere in between. The electronic structure of the MnO$_2$ chain remains almost unchanged upon adsorption. Therefore, in this regime, the additional screening is predominantly generated by the electrons of the neighboring metal surface atoms. The screening strength for NiO$_2$/Ir(100) is found to depend on the Ni($d$) configuration in the adsorbed state. The case of FeO$_2$ shows an exceptional behavior, as it is the only insulating system in the absence of metallic substrate and, thus, it has the largest $U$ value. However, this value is significantly reduced by the two mentioned screening effects after adsorption.

cond-mat.mtrl-sci↗

arXiv2021

Strength of effective Coulomb interaction in two-dimensional transition-metal Halides MX$_2$ and MX$_3$ (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I)

We calculate the strength of the effective onsite Coulomb interaction (Hubbard $U$) in two-dimensional (2D) transition-metal (TM) dihalides MX$_2$ and trihalides MX$_3$ (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I) from first principles using the constrained random-phase approximation. The correlated subspaces are formed from $t_{2g}$ or $e_g$ bands at the Fermi energy. Elimination of the efficient screening taking place in these narrow bands gives rise to sizable interaction parameters U between the localized $t_{2g}$ ($e_g$) electrons. Due to this large Coulomb interaction, we find $U/W >1$ (with the band width $W$) in most TM halides, making them strongly correlated materials. Among the metallic TM halides in paramagnetic state, the correlation strength $U/W$ reaches a maximum in NiX$_2$ and CrX$_3$ with values much larger than the corresponding values in elementary TMs and other TM compounds. Based on the Stoner model and the calculated $U$ and $J$ values, we discuss the tendency of the electron spins to order ferromagnetically.

cond-mat.str-el↗

arXiv2019

Kink far below the Fermi level reveals new electron-magnon scattering channel in Fe

Many properties of real materials can be modeled using ab initio methods within a single-particle picture. However, for an accurate theoretical treatment of excited states, it is necessary to describe electron-electron correlations including interactions with bosons: phonons, plasmons, or magnons. In this work, by comparing spin- and momentum-resolved photoemission spectroscopy measurements to many-body calculations carried out with a newly developed first-principles method, we show that a kink in the electronic band dispersion of a ferromagnetic material can occur at much deeper binding energies than expected (E_b=1.5 eV). We demonstrate that the observed spectral signature reflects the formation of a many-body state that includes a photohole bound to a coherent superposition of renormalized spin-flip excitations. The existence of such a many-body state sheds new light on the physics of the electron-magnon interaction which is essential in fields such as spintronics and Fe-based superconductivity.

cond-mat.mes-hall↗

arXiv2017

A first-principles DFT+GW study of spin-filter and spin-gapless semiconducting Heusler compounds

Among Heusler compounds, the ones being magnetic semiconductors (also known as spin-filter materials) are widely studied as they offer novel functionalities in spintronic/magnetoelectronic devices. The spin-gapless semiconductors are a special case. They possess a zero or almost-zero energy gap in one of the two spin channels. We employ the $GW$ approximation, which allows an elaborate treatment of the electronic correlations, to simulate the electronic band structure of these materials. Our results suggest that in most cases the use of $GW$ self energy instead of the usual density functionals is important to accurately determine the electronic properties of magnetic semiconductors.

cond-mat.mtrl-sci↗

arXiv2017

Nonconventional screening of the Coulomb interaction in FexOy clusters: An ab-initio study

From microscopic point-dipole model calculations of the screening of the Coulomb interaction in non-polar systems by polarizable atoms, it is known that screening strongly depends on dimensionality. For example, in one dimensional systems the short range interaction is screened, while the long range interaction is anti-screened. This anti-screening is also observed in some zero dimensional structures, i.e. molecular systems. By means of ab-initio calculations in conjunction with the random-phase approximation (RPA) within the FLAPW method we study screening of the Coulomb interaction in FexOy clusters. For completeness these results are compared with their bulk counterpart magnetite. It appears that the onsite Coulomb interaction is very well screened both in the clusters and bulk. On the other hand for the intersite Coulomb interaction the important observation is made that it is almost contant throughout the clusters, while for the bulk it is almost completely screened. More precisely and interestingly, in the clusters anti-screening is observed by means of ab-initio calculations.

physics.atm-clus↗

arXiv2017

Design of L2_1-type antiferromagnetic semiconducting full-Heusler compounds: A first principles DFT+GW study

Antiferromagnetic spintronics is an on-going growing field of research. Employing both standard density functional theory and the $GW$ approximation within the framework of the FLAPW method, we study the electronic and magnetic properties of seven potential antiferromagnetic semiconducting Heusler compounds with 18 (or 28 when Zn is present) valence electrons per unit cell. We show that in these compounds G-type antiferromagnetism is the ground state and that they are all either emiconductors (Cr$_2$ScP, Cr$_2$TiZn, V$_2$ScP, V$_2$TiSi, and V$_3$Al) or semimetals (Mn$_2$MgZn and Mn$_2$NaAl). The many-body corrections have a minimal effect on the electronic band structure with respect to the standard electronic structure calculations.

cond-mat.mtrl-sci↗

arXiv2016

Correlation effects and orbital magnetism of Co clusters

Recent experiments on isolated Co clusters have shown huge orbital magnetic moments in comparison with their bulk and surface counterparts. These clusters hence provide the unique possibility to study the evolution of the orbital magnetic moment with respect to the cluster size and how competing interactions contribute to the quenching of orbital magnetism. We investigate here different theoretical methods to calculate the spin and orbital moments of Co clusters, and assess the performances of the methods in comparison with experiments. It is shown that density functional theory in conventional local density or generalized gradient approximations, or even with a hybrid functional, severely underestimates the orbital moment. As natural extensions/corrections we considered the orbital polarization correction, the LDA+U approximation as well as the LDA+DMFT method. Our theory shows that of the considered methods, only the LDA+DMFT method provides orbital moments in agreement with experiment, thus emphasizing the importance of dynamic correlations effects for determining fundamental magnetic properties of magnets in the nano-size regime.

physics.atm-clus↗

arXiv2016

Quasiparticle band structure of the almost-gapless transition-metal-based Heusler semiconductors

Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the quasi-particle band structure of a number of such compounds being almost gapless semiconductors. We find that in contrast to the \textit{sp}-electron based semiconductors such as Si and GaAs, in these systems the many-body corrections have a minimal effect on the electronic band structure and the energy band gap increases by less than 0.2~eV, which makes the starting point density functional theory (DFT) a good approximation for the description of electronic and optical properties of these materials. Furthermore, the band gap can be tuned either by the variation of the lattice parameter or by the substitution of the \emph{sp}-chemical element.

cond-mat.mtrl-sci↗

arXiv2015

Propagation of the photoelectron wave packet in an attosecond streaking experiment

Laser-assisted photoemission from a solid is considered within a numerically exactly solvable one-dimensional model of a crystal. The effect of the inelastic scattering and of the finite duration of the pump pulse on the photoelectron dynamics is elucidated. The phenomenological result that the photoexcited wave packet moves with the group velocity dE/dk and traverses on average the distance equal to the mean free path is found to hold for energies far from the spectral gaps of the final state band structure. On the contrary, close to a spectral gap the photoelectron is found to move during the excitation by the pump pulse with a velocity higher than the group velocity.

cond-mat.mtrl-sci↗

arXiv2015

Wannier Function Approach to Realistic Coulomb Interactions in Layered Materials and Heterostructures

We introduce an approach to derive realistic Coulomb interaction terms in free standing layered materials and vertical heterostructures from ab-initio modelling of the corresponding bulk materials. To this end, we establish a combination of calculations within the framework of the constrained random phase approximation, Wannier function representation of Coulomb matrix elements within some low energy Hilbert space and continuum medium electrostatics, which we call Wannier function continuum electrostatics (WFCE). For monolayer and bilayer graphene we reproduce full ab-initio calculations of the Coulomb matrix elements within an accuracy of $0.2$eV or better. We show that realistic Coulomb interactions in bilayer graphene can be manipulated on the eV scale by different dielectric and metallic environments. A comparison to electronic phase diagrams derived in [M. M. Scherer et al., Phys. Rev. B 85, 235408 (2012)] suggests that the electronic ground state of bilayer graphene is a layered antiferromagnet and remains surprisingly unaffected by these strong changes in the Coulomb interaction.

cond-mat.mtrl-sci↗

arXiv2013

GW quasiparticle calculations with spin-orbit coupling for the light actinides

We report on the importance of GW self-energy corrections for the electronic structure of light actinides in the weak-to-intermediate coupling regime. Our study is based on calculations of the band structure and total density of states of Np, U, and Pu using a one-shot GW approximation that includes spin-orbit coupling within a full potential LAPW framework. We also present RPA screened effective Coulomb interactions for the f-electron orbitals for different lattice constants, and show that there is an increased contribution from electron-electron correlation in these systems for expanded lattices. We find a significant amount of electronic correlation in these highly localized electronic systems.

cond-mat.str-el↗

arXiv2013

Effect of Local Electron-Electron Correlation in Hydrogen-like Impurities in Ge

We have studied the electronic and local magnetic structure of the hydrogen interstitial impurity at the tetrahedral site in diamond-structure Ge, using an empirical tight binding + dynamical mean field theory approach because within the local density approximation (LDA) Ge has no gap. We first establish that within LDA the 1s spectral density bifurcates due to entanglement with the four neighboring sp3 antibonding orbitals, providing an unanticipated richness of behavior in determining under what conditions a local moment hyperdeep donor or Anderson impurity will result, or on the other hand a gap state might appear. Using a supercell approach, we show that the spectrum, the occupation, and the local moment of the impurity state displays a strong dependence on the strength of the local on-site Coulomb interaction U, the H-Ge hopping amplitude, the depth of the bare 1s energy level epsilon_H, and we address to some extent the impurity concentration dependence. In the isolated impurity, strong interaction regime a local moment emerges over most of the parameter ranges indicating magnetic activity, and spectral density structure very near (or in) the gap suggests possible electrical activity in this regime.

cond-mat.str-el↗

arXiv2013

Many-body effects on the Rashba-type spin splitting in bulk bismuth tellurohalides

We report on many-body corrections to one-electron energy spectra of bulk bismuth tellurohalides---materials that exhibit a giant Rashba-type spin splitting of the band-gap edge states. We show that the corrections obtained in the one-shot $GW$ approximation noticeably modify the spin-orbit-induced spin splitting evaluated within density functional theory. We demonstrate that taking into account many-body effects is crucial to interpret the available experimental data.

cond-mat.mtrl-sci↗

arXiv2013

Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment

Using angle-resolved photoelectron spectroscopy and ab-initio GW calculations, we unambiguously show that the widely investigated three-dimensional topological insulator Bi2Se3 has a direct band gap at the Gamma point. Experimentally, this is shown by a three-dimensional band mapping in large fractions of the Brillouin zone. Theoretically, we demonstrate that the valence band maximum is located at the Brillouin center only if many-body effects are included in the calculation. Otherwise, it is found in a high-symmetry mirror plane away from the zone center.

cond-mat.mtrl-sci↗

arXiv2012

Theoretical investigation into the possibility of very large moments in Fe16N2

We examine the mystery of the disputed high-magnetization α"-Fe16N2 phase, employing the Heyd-Scuseria-Ernzerhof screened hybrid functional method, perturbative many-body corrections through the GW approximation, and onsite Coulomb correlations through the GGA+U method. We present a first-principles computation of the effective on-site Coulomb interaction (Hubbard U) between localized 3d electrons employing the constrained random-phase approximation (cRPA), finding only somewhat stronger on-site correlations than in bcc Fe. We find that the hybrid functional method, the GW approximation, and the GGA+U method (using parameters computed from cRPA) yield an average spin moment of 2.9, 2.6 - 2.7, and 2.7 μ_B per Fe, respectively.

cond-mat.mtrl-sci↗

arXiv2011

Strength of effective Coulomb interactions in graphene and graphite

To obtain an effective many-body model of graphene and related materials from first principles we calculate the partially screened frequency dependent Coulomb interaction. In graphene, the effective on-site (Hubbard) interaction is U_00 = 9.3 eV in close vicinity to the critical value separating conducting graphene from an insulating phase emphasizing the importance of non-local Coulomb terms. The nearest-neighbor Coulomb interaction strength is computed to U_01 = 5.5 eV. In the long wavelength limit, we find the effective background dielectric constant of graphite to be ε= 2.5 in very good agreement with experiment.

cond-mat.mes-hall↗

arXiv1999

Phaseseparation in overdoped Y_{1-0.8}Ca_{0-0.2}Ba_2Cu_3O_{6.96-6.98}

The dimpling in the CuO_2 planes of overdoped Y_{1-y}Ca_yBa_2Cu_3 O_{6.96-6.98} (y=0.02-0.2) has been measured by x-ray absorption-fine- structure spectroscopy (Y-K EXAFS). A step-like decrease around 12% Ca indicates a percolation threshold for distorted sites of 5 cells, and thus phase segregation. We conclude the charge carriers added by substitution of Y{3+} by Ca{2+} to be trapped at the Ca sites and their nn environment.

cond-mat.supr-con↗