C. Goletti | Searcharxiv

arXiv2019

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very diverse growth mode is obtained depending on the specific atomic structure and step density of nearby surface domains with different vicinal crystallographic orientations. On highly-miscut areas of the Ge(001) substrate, the critical thickness for islanding is lowered to about 5 ML, in contrast to the 11 ML reported for the flat Ge(001) surface, while on unreconstructed (1x1) domains the growth is Volmer-Weber driven. An explanation is proposed considering the diverse relative contributions of step and surface energies on misoriented substrates. In addition, we show that the bottom-up pattern of the substrate naturally formed by thermal annealing determines a spatial correlation for the dot sites.

cond-mat.mes-hall↗

arXiv2018

Formation of extended thermal etch pits on annealed Ge wafers

An extended formation of faceted pit-like defects on Ge(001) and Ge(111) wafers was obtained by thermal cycles to T> 750 {\deg}C. This temperature range is relevant in many surface-preparation recipes of the Ge surface. The density of the defects depends on the temperature reached, the number of annealing cycles performed and correlates to the surface-energy stability of the specific crystal orientation. We propose that the pits were formed by preferential desorption from the strained regions around dislocation pile-ups. Indeed, the morphology of the pits was the same as that observed for preferential chemical etching of dislocations while the spatial distribution of the pits was clearly non-Poissonian in line with mutual interactions between the core dislocations.

cond-mat.mtrl-sci↗