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C. Hsieh

Publications and source records attributed to C. Hsieh.

2 recordsLinked to original sources

LOADBench: A Large Open Analog Dataset and Benchmark for Machine Learning in IC Design

Machine learning (ML) for analog IC design is constrained by limited open data and the absence of standardized evaluation: results reported in different papers are typically obtained on bespoke, often closed, datasets and with ad-hoc metrics, leaving comparisons across methods unreliable. We address both gaps with a large opensource dataset and a suite of standardized benchmarks. The dataset contains more than 100 operational amplifier (opamp) topologies (1-, 2-, and 3-stage) in the SkyWater130 PDK, each shipped with structural and functional annotations, topology-specific sizing constraints (symmetry and sizing rules), an Ngspice testbench, and a multi-objective NSGA-II sizing run producing around 103 Pareto-optimal and 106 intermediate sizing-performance pairs per topology. On top of this data we define six benchmark tasks with precise protocols: inverse sizing, topology selection, sub-circuit classification, structural circuit generation, Pareto-membership prediction, and multi-objective optimization. Thus, the data presented here constitutes the most comprehensive dataset for ML development in over four decades of analog IC design automation. The dataset, ground-truth annotations, and reference implementations of the metric-defining routines are released under an open license, enabling reproducible and directly comparable evaluation across heterogeneous analog design automation methods.

cs.AI↗

Effect of shallow traps on polaron transport at the surface of organic semiconductors

The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, mu(N), has been measured, which allowed to estimate the average polaron trapping time, tau_tr = 50 +- 10 ps, and the density of shallow traps, N_0 = (3 +- 0.5)*10^11 cm^-2, in the channel of single-crystal tetracene devices.

cond-mat.mtrl-sci↗