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C. Irmler

Publications and source records attributed to C. Irmler.

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Development for the Belle II vertex detector upgrade with depleted monolithic active pixel sensors

The vertex detector upgrade project for the Belle II experiment, based on CMOS depleted monolithic active pixel sensor technology, is planned to be carried out in conjunction with the major modification of the interaction region of the SuperKEKB collider during Long Shutdown 2 from 2032 to 2034. The MAPS sensor, named OBELIX currently under development, is derived from the successor to TJ-Monopix2, with modifications implemented to ensure compatibility with the Belle II trigger system. The new vertex detector consists of two layers of four self-supported consecutive OBELIX sensors, and three layers of discrete OBELIX sensors mounted on mechanical support structures with readout flex circuits attached to the sensors. The detector is arranged cylindrically around the beam pipe at radii ranging from 14 mm to 140 mm. The minimization of the material budget is required in order to enhance physics performance. We present an overview of the project and its latest developments, with particular emphasis on the development of low-material-budget flex circuits employing aluminum conductors.

physics.ins-det

Application of exhaustive simulation flow for advanced performance prediction of monolithic active pixel sensors

Monolithic active pixel sensor (MAPS) developments have pushed the detection performance in various directions, especially relative to timing where nanosecond-level precision is now considered. This evolution calls for a simultaneous upgrade of the simulation tools. We have developed a simulation flow that covers steps from the signal creation in the sensitive volume to the output of the pixel digital logic that performs the time-of-arrival and time-over-threshold (ToA/ToT) measurements. This approach adds several new features to the traditional use the of the TCAD - Allpix Squared duo, among which : the integration of the pixel wells from the layout in order to precisely describe the pixel key characteristics such as leakage and punch-through currents and the coupling of Monte Carlo simulations (Allpix Squared) with high precision electrical simulations (SPICE). The first (Allpix Squared) for the precise description of the current induced at the collection electrode and the second (SPICE) to guarantee high precision simulation of the front-end electronics using realistic signal events. Irradiation is also modeled, both from the charge propagation side (charge trapping) and from the front-end response side (high input signal discharge). We have applied this methodology to the MAPS developed in the context of the Belle II vertex detector upgrade. In this contribution, we detail the key features of the exhaustive simulation flow, present the outcome of the comparison with the TJ-Monopix2 measurements and discuss the interest of the methodology for the development of modern MAPS.

physics.ins-det

Radiation damage study of Belle II silicon strip sensors with 90 MeV electron irradiation

The silicon strip sensors of the Belle II silicon vertex detector were irradiated with 90 MeV electron beams up to an equivalent 1-MeV-neutron fluence of $3.0\times 10^{13}~{\rm n}_{\rm eq}/{\rm cm^2}$. We measure changes in sensor properties induced by radiation damage in the semiconductor bulk. Electrons around this energy are a major source of beam-induced background during Belle II operation. We discuss observed changes in full depletion voltage, sensor leakage current, noise, and charge collection. The sensor bulk type inverts at an equivalent 1-MeV-neutron fluence of $6.0\times 10^{12}~{\rm n}_{\rm eq}/{\rm cm^2}$. The leakage current increases proportionally to the radiation dose. We determine a damage constant of $3.9 \times 10^{-17}$ A/cm at 17 C$^\circ$ immediately after irradiation, which drops significantly to approximately 40% of the initial value in 200 hours, then stabilizes to approximately 30% of the initial value in 1000 hours. We measure sensor noise and signal charge for a sensor irradiated with the equivalent 1-MeV-neutron fluence of $3.0\times 10^{13}~{\rm n}_{\rm eq}/{\rm cm^2}$. Noise increases by approximately 44% after irradiation, while signal charge does not change significantly when a sufficiently high bias voltage is applied.

physics.ins-det

Operational experience and performance of the Silicon Vertex Detector after the first long shutdown of Belle II

In 2024, the Belle II experiment resumed data taking after the Long Shutdown 1, which was required to install a two-layer pixel detector and upgrade accelerator components. We describe the challenges of this shutdown and the operational experience thereafter. With new data, the silicon-strip vertex detector (SVD) confirmed the high hit efficiency, the large signal-to-noise ratio, and the excellent cluster position resolution. In the coming years, the SuperKEKB peak luminosity is expected to increase to its target value, resulting in a larger SVD occupancy caused by beam background. Considerable efforts have been made to improve SVD reconstruction software by exploiting the excellent SVD hit-time resolution to determine the collision time and reject off-time particle hits. A novel procedure to group SVD hits event-by-event, based on their time, has been developed using the grouping information during reconstruction, significantly reducing the fake rate while preserving the tracking efficiency. The front-end chip (APV25) is operated in the multi-peak mode, which reads six samples. A 3/6-mixed acquisition mode, based on the timing precision of the trigger, reduces background occupancy, trigger dead-time, and data size. Studies of the radiation damage show that the SVD performance will not seriously degrade during the lifetime of the detector, despite moderate radiation-induced increases in sensor current and strip noise.

physics.ins-det

Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor

The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution -- key requirements for future high-energy physics experiments such as the HL-LHC and FCC. Fabricated using a \SI{150}{nm} CMOS process by \emph{LFoundry}, it introduces several improvements over its predecessor, the \emph{RD50-MPW3}, including separated power domains for reduced noise, a new backside biasing scheme, and an enhanced guard ring structure, enabling operation at bias voltages up to \SI{800}{V}. Tests with non-irradiated samples achieved hit detection efficiencies exceeding \SI{99.9}{\%} and a spatial resolution around \SI{16}{\mu m}. Neutron-irradiated sensors were characterized using IV measurements and test-beam campaigns, confirming the sensor's robustness in high-radiation environments. The results highlight the ability of HV-CMOS technology to restore hit detection efficiency post-irradiation by increasing the applied bias voltage. Details of these measurements and timing performance are presented in this paper.

physics.ins-det

Characterization of the RD50-MPW4 HV-CMOS pixel sensor

The RD50-MPW4 is the latest HV-CMOS pixel sensor from the CERN-RD50-CMOS working group, designed to evaluate the HV-CMOS technology in terms of spatial resolution, radiation hardness and timing performance. Fabricated by LFoundry using a 150nm process, it features an improved architecture to mitigate crosstalk, which has been an issue with the predecessor RD50-MPW3, allowing more sensitive threshold settings and full matrix operation. Enhancements include separated power domains for peripheral and in-pixel digital readout, a new backside-biasing step, and an improved guard ring structure supporting biasing up to 500V, significantly boosting radiation hardness. Laboratory measurements and test beam results presented in this paper show significant improvements over its predecessor regarding noise behavior, spatial resolution, and efficiency.

physics.ins-det

The Belle II Detector Upgrades Framework Conceptual Design Report

We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive with the LHC and other experiments.

hep-ex

Silicon Vertex Detector of the Belle II Experiment

The silicon vertex detector (SVD) is installed at the heart of the Belle II experiment, taking data at the high-luminosity $B$-Factory SuperKEKB since 2019. The detector has shown a stable and above-99\% hit efficiency, with a large signal-to-noise in all sensors since the beginning of data taking. Cluster position and time resolution have been measured with 2020 and 2022 data and show excellent performance and stability. The effect of radiation damage is visible, but not affecting the performance. As the luminosity increases, higher machine backgrounds are expected and the excellent hit-time information in SVD can be exploited for background rejection. In particular, we have recently developed a novel procedure to select hits by grouping them event-by-event based on their time. This new procedure allows a significant reduction of the fake rate, while preserving the tracking efficiency, and it has therefore replaced the previous cut-based procedure. We have developed a method that uses the SVD hits to estimate the track time (previously unavailable) and the collision time. It has a similar precision to the estimate based on the drift chamber but its execution time is three orders of magnitude smaller, allowing a faster online reconstruction that is crucial in a high luminosity regime. The track time is a powerful information provided to analysis that allows, together with the above-mention grouping selection, to raise the occupancy limit above that expected at nominal luminosity, leaving room for a safety factor. Finally, in June 2022 the data taking of the Belle II experiment was stopped to install a new two-layer DEPFET detector (PXD) and upgrade components of the accelerator. The whole silicon tracker (PXD+SVD) has been extracted from Belle II, the new PXD installed, the detector closed and commissioned. We briefly describe the SVD results of this upgrade.

hep-ex

Upgrade of Belle II Vertex Detector with CMOS Pixel Technology

The Belle II experiment at KEK in Japan considers upgrading its vertex detector system to address the challenges posed by high background levels caused by the increased luminosity of the SuperKEKB collider. One proposal for upgrading the vertex detector aims to install a 5-layer all monolithic pixel vertex detector based on fully depleted CMOS sensors in 2027. The new system will use the OBELIX MAPS chips to improve background robustness and reduce occupancy levels through small and fast pixels. This causes better track finding, especially for low transverse momenta tracks. This text will focus on the predecessor of the OBELIX sensor, the TJ-Monopix2, presenting laboratory and test beam results on pixel response, efficiency, and spatial resolution.

physics.ins-det

Measurement of the cluster position resolution of the Belle II Silicon Vertex Detector

The Silicon Vertex Detector (SVD), with its four double-sided silicon strip sensor layers, is one of the two vertex sub-detectors of Belle II operating at SuperKEKB collider (KEK, Japan). Since 2019 and the start of the data taking, the SVD has demonstrated a reliable and highly efficient operation, even running in an environment with harsh beam backgrounds that are induced by the world's highest instantaneous luminosity. In order to provide the best quality track reconstruction with an efficient pattern recognition and track fit, and to correctly propagate the uncertainty on the hit's position to the track parameters, it is crucial to precisely estimate the resolution of the cluster position measurement. Several methods for estimating the position resolution directly from the data will be discussed.

physics.ins-det

The Silicon Vertex Detector of the Belle II Experiment

In 2019 the Belle II experiment started data taking at the asymmetric SuperKEKB collider (KEK, Japan) operating at the Y(4S) resonance. Belle II will search for new physics beyond the Standard Model by collecting an integrated luminosity of 50~ab$^{-1}$. The silicon vertex detector (SVD), consisting of four layers of double-sided silicon strip sensors, is one of the two vertex sub-detectors. The SVD extrapolates the tracks to the inner pixel detector (PXD) with enough precision to correctly identify hits in the PXD belonging to the track. In addition the SVD has standalone tracking capability and utilizes ionization to enhance particle identification in the low momentum region. The SVD is operating reliably and with high efficiency, despite exposure to the harsh beam background of the highest peak-luminosity collider ever built. High signal-to-noise ratio and hit efficiency have been measured, as well as the spatial resolution; all these quantities show excellent stability over time. Data-simulation agreement on cluster properties has recently been improved through a careful tuning of the simulation. The precise hit-time resolution can be exploited to reject out-of-time hits induced by beam background, which will make the SVD more robust against higher levels of background. During the first three years of running, radiation damage effects on strip noise, sensor currents and depletion voltage have been observed, as well as some coupling capacitor failure due to intense radiation bursts. None of these effects cause significant degradation in the detector performance.

physics.ins-det

Single particle tracking uncertainties in ion imaging

An extensive comparison of the path uncertainty in single particle tracking systems for ion imaging was carried out based on Monte Carlo simulations. The spatial resolution as function of system parameters such as geometry, detector properties and the energy of proton and helium beams was investigated to serve as a guideline for hardware developments. Primary particle paths were sampled within a water volume and compared to the most likely path estimate obtained from detector measurements, yielding a depth-dependent uncertainty envelope. The maximum uncertainty along this curve was converted to a conservative estimate of the minimal radiographic pixel spacing for a single set of parameter values. Simulations with various parameter settings were analysed to obtain an overview of the reachable pixel spacing as function of system parameters. The results were used to determine intervals of detector material budget and position resolution that yield a pixel spacing small enough for clinical dose calculation. To ensure a pixel spacing below 2 mm, the material budget of a detector should remain below 0.25 % for a position resolution of 200 $\mathrm{μm}$ or below 0.75 % for a resolution of 10 $\mathrm{μm}$. Using protons, a sub-millimetre pixel size could not be achieved for a phantom size of 300 mm or at a large clearance. With helium ions, a sub-millimetre pixel spacing could be achieved even for a large phantom size and clearance, provided the position resolution was less than 100 $\mathrm{μm}$ and material budget was below 0.75 %.

physics.med-ph

Imaging with protons at MedAustron

Ion beam therapy has become a frequently applied form of cancer therapy over the last years. The advantage of ion beam therapy over conventional radiotherapy using photons is the strongly localized dose deposition, leading to a reduction of dose applied to surrounding healthy tissue. Currently, treatment planning for proton therapy is based on X-ray computed tomography, which entails certain sources of inaccuracy in alculation of the stopping power (SP). A more precise method to acquire the SP is to directly use high energy protons (or other ions such as carbon) and perform proton computed tomography (pCT). With this method, the ions are tracked prior to entering and after leaving the patient and finally their residual energy is measured at the very end. Therefore, an ion imaging demonstrator, comprising a tracking telescope made from double-sided silicon strip detectors and a range telescope as a residual energy detector, was set up. First measurements with this setup were performed at beam tests at MedAustron, a center for ion therapy and research in \mbox{Wiener Neustadt}, \mbox{Austria}. The facility provides three rooms for cancer treatment with proton beams as well as one which is dedicated to non-clinical research. This contribution describes the principle of ion imaging with proton beams in general as well as the design of the experimental setup. Moreover, first results from simulations and recent beam tests as well as ideas for future developments will be presented.

physics.ins-det

Resolution Studies on Silicon Strip Sensors with fine Pitch

In June 2008 single-sided silicon strip sensors with 50 $μ$m readout pitch were tested in a highly energetic pion beam at the SPS at CERN. The purpose of the test was to evaluate characteristic detector properties by varying the strip width and the number of intermediate strips. The experimental setup and first results for the spatial resolution are discussed.

physics.ins-det