arXiv subjects

C. J. Humphreys

Publications and source records attributed to C. J. Humphreys.

7 recordsLinked to original sources

arXiv2021

Graphene on silicon: effects of the silicon surface orientation on the work function and carrier density of graphene

Density functional theory has been employed to study graphene on the (111), (100) and (110) surfaces of silicon (Si) substrates. There are several interesting findings. First, carbon atoms in graphene form covalent bonds with Si atoms, when placed close enough on Si (111) and (100) surfaces, but not on the (110) surface. The presence of a Si (111) surface shifts the Fermi level of graphene into its conduction band, resulting in an increase of the work function by 0.29 eV and of the electron density by three orders of magnitude. The carrier density of graphene can also be increased by eighty times on a Si (100) substrate without doping, due to the modification of the density of states near the Dirac point. No interfacial covalent bond can be formed on Si (110). These striking effects that different orientations of a silicon substrate can have on the properties of graphene are related to the surface density of the silicon surface. Applying the results to a real device of a specific orientation requires further consideration of surface reconstructions, lattice mismatch, temperature, and environmental effects.

cond-mat.mtrl-sci↗

arXiv2019

3D strain in 2D materials: Experimental test in unsupported monolayer graphene under pressure

Previous Raman measurements on supported graphene under high pressure reported a very different shift rate of in-plane phonon frequency of graphene (16 cm$^{-1}$GPa$^{-1}$) from graphite (4.7 cm$^{-1}$GPa$^{-1}$), implying very different in-plane anharmonicity that graphene gets stiffer than graphite in-plane under the same pressure. It was suggested that it could be due to the adhesion of graphene to substrates. We have therefore performed high pressure Raman measurements on unsupported graphene and we find a similar in-plane stiffness and anharmonicity of graphene (5.4 cm$^{-1}$GPa$^{-1}$) to graphite. On the other hand, the out-of-plane stiffness of graphene is hard to define, due to the 2D nature of graphene. However, we estimate a similar out-of-plane stiffness of graphene (1.4$\pm$295 GPa) to that of graphite (38.7$\pm$7 GPa), by measuring its effect on the shift of the in-plane phonon frequency with pressure.

cond-mat.mtrl-sci↗

arXiv2018

The Effect of Humidity on the Interlayer Interaction of Bi-layer Graphene

The lubricating ability of graphite largely depends on the environmental humidity, essentially the amount of water in between its layers. In general, intercalated molecules in layered materials modify their extraordinary properties by interacting with the layers. To understand the interaction of intercalated water molecules with graphene layers, we performed Raman measurements on bi-layer graphene at various humidity levels and observed an additional peak close to that of the low-frequency layer breathing mode between two graphene layers. The additional peak is attributed to the vibration between an intercalated water layer and the graphene layers. We further propose that the monolayer coverage of water increases between bilayer graphene with increasing environmental humidity while the interaction between the water layer and graphene layers remains approximately unchanged, until too much water is intercalated to keep the monolayer structure, at just over 50\% relative humidity. Notably, the results suggest that unexpectedly humidity could be an important factor affecting the properties of layered materials, as it significantly modifies the interlayer interaction.

cond-mat.mtrl-sci↗

arXiv2016

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are very broad with full width at half-maximum height increasing from 81 to 330 meV as the In fraction increases. Comparative photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At a temperature of 10 K the degree of linear polarisation of the a-plane samples is much smaller than of the m-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-band states to lie in the range of 23-54 meV for both a-and m-plane samples in which we could observe distinct exciton features in the polarised photoluminescence excitation spectroscopy. Thus, the thermal occupation of a higher valence subband cannot be responsible for the reduction of the degree of linear polarisation. Time-resolved spectroscopy indicates that in a-plane samples there is an extra emission component which at least partly responsible for the reduction in the degree of linear polarisation.

cond-mat.mes-hall↗

arXiv2015

Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.

cond-mat.mes-hall↗

arXiv2010

Carrier localization mechanisms in InGaN/GaN quantum wells

Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that the resultant fluctuations in alloy concentration can localize the carriers. By using a locally varying indium concentration function we have calculated the contribution to the potential energy of the carriers from band gap fluctuations, the deformation potential and the spontaneous and piezoelectric fields. We have considered the effect of well width fluctuations and found that these contribute to electron localization, but not to hole localization. We also simulate low temperature photoluminescence spectra and find good agreement with experiment.

cond-mat.mes-hall↗

arXiv2004

Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope

Semiconductor dopant profiling using secondary electron imaging in a scanning electron microscope (SEM) has been developed in recent years. In this paper, we show that the mechanism behind it also allows mapping of the electric potential of undoped regions. By using an unbiased GaAs/AlGaAs heterostructure, this article demonstrates the direct observation of the electrostatic potential variation inside a 90nm wide undoped GaAs channel surrounded by ionized dopants. The secondary electron emission intensities are compared with two-dimensional numerical solutions of the electric potential.

cond-mat.mtrl-sci↗