arXiv subjects

C. J. K. Richardson

Publications and source records attributed to C. J. K. Richardson.

4 recordsLinked to original sources

arXiv2026

Growth optimization of shallow Ge quantum wells grown by molecular beam epitaxy

Shallow strained Ge quantum wells have gained recent attention for realizing scalable, high-performance hybrid superconductor/semiconductor-based qubits. Epitaxial superconducting contacts can improve the quality and consistency of the superconductor/semiconductor interface. The growth of Ge quantum wells by molecular beam epitaxy is then motivating due to the relative ease of integration with epitaxial superconductor growth. However, the performance of Ge quantum wells grown by molecular beam epitaxy (MBE) has been limited. To improve the properties of MBE-grown Ge quantum wells, the growth conditions were systematically optimized. Thick buffer layers are utilized to eliminate certain defects, and an optimal growth temperature is found. A peak hole mobility of 105,000 cm\textsuperscript{2}/Vs at 2 K is obtained in a 22-nm deep Ge quantum well, demonstrating that the Ge quantum wells grown in this study represent the highest mobilities for shallow MBE-grown samples. Mobility modeling indicates that the increase in mobility due to growth temperature optimization are likely due to a reduction in interface roughness scattering, and further improvements in mobility are expected through improved surface passivation.

cond-mat.mtrl-sci↗

arXiv2025

Fabrication of Metal Air Bridges for Superconducting Circuits using Two-photon Lithography

Extraneous high frequency chip modes parasitic to superconducting quantum circuits can result in decoherence when these modes are excited. To suppress these modes, superconducting air bridges (AB) are commonly used to electrically connect ground planes together when interrupted by transmission lines. Here, we demonstrate the use of two-photon photolithography to build a supporting 3D resist structure in conjunction with a lift-off process to create AB. The resulting aluminum AB, have a superconducting transition temperature $T_{c} = 1.08$ K and exhibit good mechanical strength up to lengths of 100 $μ$m. A measurable amount of microwave loss is observed when 35 AB were placed over a high-$Q$ Ta quarter-wave coplanar waveguide resonator.

quant-ph↗

arXiv2024

Impact of etches on thin-film single-crystal niobium resonators

A single crystal niobium thin film was grown using molecular beam epitaxy on a c-plane sapphire wafer. Several samples were fabricated into dc resistivity test devices and coplanar waveguide resonator chips using the same microfabrication procedures and solvent cleans. The samples were then subject to different acid cleaning treatments using different combinations of piranha, hydrofluoric acid, and buffered oxide etch solutions. The different samples expressed changes in dc resistivity in the normal and superconducting states such that the low temperature resistivities changed by more than 100\%, and the residual resistivity ratio dropped by a factor of 2. The internal quality factor of coplanar waveguide resonators measured near 5~GHz also showed significant variation at single photon powers ranging from 1.4$\times 10^6$ to less than 60$\times 10^3$. These changes correlate with the formation of surface crystallites that appear to be hydrocarbons. All observations are consistent with hydrogen diffusing into the niobium film at levels below the saturation threshold that is needed to observe niobium hydrides.

cond-mat.mtrl-sci↗

arXiv2014

Superconducting TiN Films Sputtered over a Large Range of Substrate DC Bias

We have investigated properties of superconducting titanium nitride (TiN) films that were sputtered over a large range of RF-induced DC bias voltage applied to the substrate. Films grown with the largest bias voltages contained cubic TiN phases with a large fraction of the (200) crystalline growth orientation. These films also contained the smallest concentrations of oxygen impurities, resulting in stoichiometric TiN. Over the range of bias, variations of the stress from slightly tensile to highly compressive were measured and correlated to crystallinity of the (200) growth. The films exhibited highly uniform thickness and resistivity, and show the potential for yielding reproducible low-temperature devices. Finally, coplanar resonators fabricated with the films exhibited high kinetic inductance and quality factor, where the latter was obtained in part from temperature-dependent frequency shifts.

cond-mat.supr-con↗