arXiv subjects

C. Kaufmann Ribeiro

Publications and source records attributed to C. Kaufmann Ribeiro.

3 recordsLinked to original sources

arXiv2026

YNiSn$_2$: A candidate Dirac semimetal

We report the synthesis and physical properties of the new compound YNiSn$_2$, which crystallizes in the orthorhombic \textit{Cmcm} structure. The material exhibits semimetallic behavior and develops a giant positive magnetoresistance approaching 1200\% at $B = 16$ T. Pronounced de Haas-van Alphen and Shubnikov-de Haas oscillations reveal a dominant quasi-two-dimensional Fermi surface with an exceptionally small cyclotron effective mass of $m^{*} = 0.08 m{0}$, indicating light carriers and a tiny Fermi surface pocket. The strong anisotropy revealed by Shubnikov-de Haas quantum oscillation measurements highlights the low-dimensional electronic character of YNiSn$_2$, positioning it as a promising Dirac semimetal candidate.

cond-mat.str-el↗

arXiv2025

Reentrant Landau Levels in a Dirac topological insulator

The quantum limit, where magnetic fields confine carriers to the lowest Landau level, is predicted to host exotic quantum phases arising from strengthened electronic correlations, reduced dimensionality, and increased degeneracy. We report a novel quantization regime realized in the ultra-quantum limit of the narrow-gap Dirac insulator ZrTe5, marked by anomalous magnetoresistance oscillations. These oscillations, measured in ZrTe5 single crystals down to 700 mK and up to 60 T, are distinctly non-1/B periodic and persist for magnetic fields well beyond the quantum limit. In this regime, the competition between Zeeman and cyclotron energies drives a nonlinear evolution and back-bending of Landau levels, causing low-index levels to re-cross the Fermi energy at high fields. This mechanism departs from the standard Lifshitz-Kosevich description and provides a framework to describe how the electronic structure in topological Dirac insulators evolves beyond the quantum limit.

cond-mat.other↗

arXiv2023

Investigation of role of antisite disorder in the pristine cage compound FeGa$_3$

The role of controlled disorder in the strong correlated narrow gap semiconductor candidate FeGa$_3$ has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations of the occupation number of Fe and Ga sites from those expected in the pristine compound were quantified with X-ray analysis. Besides that, electrical transport and magnetization measurements reveal that hierarchy in Fe and Ga site disorder tunes the ground state of FeGa$_3$ from paramagnetic semiconducting to a magnetic metal. These findings are discussed within the framework of Anderson metal-insulator transitions and spin fluctuations.

cond-mat.mtrl-sci↗