arXiv subjects

C. León

Publications and source records attributed to C. León.

3 recordsLinked to original sources

arXiv2019

Valley polarization braiding in strained graphene

Previous works on deformed graphene predict the existence of valley-polarized states, however, optimal conditions for their detection remain challenging. We show that in the quantum Hall regime, edge-like states in strained regions can be isolated in energy within Landau gaps. We identify precise conditions for new conducting edges-like states to be valley polarized, with the flexibility of positioning them at chosen locations in the system. A map of local density of states as a function of energy and position reveals a unique braid pattern that serves as a fingerprint to identify valley polarization.

cond-mat.mes-hall↗

arXiv2019

Localization of Yttrium Segregation within YSZ Grain Boundary Dislocation Cores

Ionic conductivity blocking at grain boundaries in polycrystalline electrolytes is one of the main obstacles that need to be overcome in order to improve the performance of solid state fuel cells and batteries. To this aim, harnessing the physical properties of grain boundaries in ionic conducting materials such as yttria stabilized zirconia (YSZ) down to the atomic scale arises as a greatly important task. Here we present a structural and compositional analysis of a single grain boundary in a 9 mol% yttria content YSZ bicrystal by means of aberration corrected scanning transmission electron microscopy. Our studies combine strain and compositional atomic resolution analysis with density-functional-theory calculations in order to find a preferential segregation of yttrium to the expansive atomic sites at the grain boundary dislocation cores. These results address a crucial step towards the understanding of the physical properties of grain boundaries down to atomic dimensions.

cond-mat.mtrl-sci↗

arXiv2016

Strained fold assisted transport in graphene systems

Deformations in graphene systems are central elements in the novel field of {\it straintronics}. Various strain geometries have been proposed to produce specific properties but their experimental realization has been limited. Because strained folds can be engineered on graphene samples on appropriate substrates, we study their effects on graphene transport properties. We show the existence of an enhanced local density of states (LDOS) along the direction of the strained fold that originates from localization of higher energy states, and provides extra conductance channels at lower energies. In addition to exhibit sublattice symmetry breaking, these states are valley polarized, with quasi-ballistic properties in smooth disorder potentials. We confirmed that these results persist in the presence of strong edge disorder, making these geometries viable electronic waveguides. These findings could be tested in properly engineered experimental settings.

cond-mat.mes-hall↗