arXiv subjects

C. M. Bertoni

Publications and source records attributed to C. M. Bertoni.

3 recordsLinked to original sources

arXiv2015

Topological properties of the bond-modulated honeycomb lattice

We study the combined effects of lattice deformation, e-e interaction and spin-orbit coupling in a two-dimensional (2D) honeycomb lattice. We adopt different kinds of hopping modulation--generalized dimerization and a Kekule distortion--and calculate topological invariants for the non-interacting system and for the interacting system. We identify the parameter range (Hubbard U, hopping modulation, spin-orbit coupling) where the 2D system behaves as a trivial insulator or Quantum Spin Hall Insulator.

cond-mat.str-el↗

arXiv2015

Topological invariants in interacting Quantum Spin Hall: a Cluster Perturbation Theory approach

Using Cluster Perturbation Theory we calculate Green's functions, quasi-particle energies and topological invariants for interacting electrons on a 2-D honeycomb lattice, with intrinsic spin-orbit coupling and on-site e-e interaction. This allows to define the parameter range (Hubbard U vs spin-orbit coupling) where the 2D system behaves as a trivial insulator or Quantum Spin Hall insulator. This behavior is confirmed by the existence of gapless quasi-particle states in honeycomb ribbons. We have discussed the importance of the cluster symmetry and the effects of the lack of full translation symmetry typical of CPT and of most Quantum Cluster approaches. Comments on the limits of applicability of the method are also provided.

cond-mat.str-el↗

arXiv2005

Hydrogen induced surface metallization of $β$-SiC(100)-($3\times 2$) revisited by DFT calculations

Recent experiments on the silicon terminated $3\times 2$ SiC(100) surface indicated an unexpected metallic character upon hydrogen adsorption. This effect was attributed to the bonding of hydrogen to a row of Si atoms and to the stabilization of a neighboring dangling bond row. Here, on the basis of Density-Functional calculations, we show that multiple-layer adsorption of H at the reconstructed surface is compatible with a different geometry: besides saturating the topmost Si dangling bonds, H atoms are adsorbed at rather unusual sites, \textit{i.e.} stable bridge positions above third-layer Si dimers. The results thus suggest an alternative interpretation for the electronic structure of the metallic surface

cond-mat.mtrl-sci↗