arXiv subjects

C. M. Hubert Chen

Publications and source records attributed to C. M. Hubert Chen.

3 recordsLinked to original sources

arXiv2008

Constraints on the average magnetic field strength of relic radio sources 0917+75 and 1401-33 from XMM-Newton observations

We observed two relic radio sources, 0917+75 and 1401-33, with the XMM-Newton X-ray observatory. We did not detect any X-ray emission, thermal or non-thermal, in excess of the local background level from either target. This imposes new upper limits on the X-ray flux due to inverse Compton scattering of photons from the cosmic microwave background by relativistic electrons in the relic sources, and new lower limits on the magnetic field strength from the relative strength of the radio and X-ray emission. The combination of radio and X-ray observations provides a measure of the magnetic field independent of equipartition or minimum energy assumptions. Due to increasing sensitivity of radio observations, the known population of cluster relics has been growing; however, studies of non-thermal X-ray emission from relics remain scarce. Our study adds to the small sample of relics studied in X-rays. In both relics, our field strength lower limits are slightly larger than estimates of the equipartition magnetic field.

astro-ph↗

arXiv2001

Effects of Bulk and Surface Conductivity on the Performance of CdZnTe Pixel Detectors

We studied the effects of bulk and surface conductivity on the performance of high-resistivity CdZnTe (CZT) pixel detectors with Pt contacts. We emphasize the difference in mechanisms of the bulk and surface conductivity as indicated by their different temperature behaviors. In addition, the existence of a thin (10-100 A) oxide layer on the surface of CZT, formed during the fabrication process, affects both bulk and surface leakage currents. We demonstrate that the measured I-V dependencies of bulk current can be explained by considering the CZT detector as a metal-semiconductor-metal system with two back-to-back Schottky-barrier contacts. The high surface leakage current is apparently due to the presence of a low-resistivity surface layer that has characteristics which differ considerably from those of the bulk material. This surface layer has a profound effect on the charge collection efficiency in detectors with multi-contact geometry; some fraction of the electric field lines originated on the cathode intersects the surface areas between the pixel contacts where the charge produced by an ionizing particle gets trapped. To overcome this effect we place a grid of thin electrodes between the pixel contacts; when the grid is negatively biased, the strong electric field in the gaps between the pixels forces the electrons landing on the surface to move toward the contacts, preventing the charge loss. We have investigated these effects by using CZT pixel detectors indium bump bonded to a custom-built VLSI readout chip.

physics.ins-det↗

arXiv2001

Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors

In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact in series with the bulk resistance. Least square fits to the experimental data yield 0.78-0.79 eV for the Pt-CZT Schottky barrier height, and <20 V for the voltage required to deplete a 2 mm thick CZT detector. We demonstrate that at high bias the thermionic current over the Schottky barrier, the height of which is reduced due to an interfacial layer between the contact and CZT material, controls the leakage current of the detectors. In many cases the dark current is not determined by the resistivity of the bulk material, but rather the properties of the contacts; namely by the interfacial layer between the contact and CZT material.

physics.ins-det↗