arXiv subjects

C. M. Lieber

Publications and source records attributed to C. M. Lieber.

5 recordsLinked to original sources

arXiv2014

Hole Spin Coherence in a Ge/Si Heterostructure Nanowire

Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time $T_2^* \sim 0.18~\mathrm{μs}$ exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.

cond-mat.mes-hall↗

arXiv2014

Antilocalization of Coulomb Blockade in a Ge-Si Nanowire

The distribution of Coulomb blockade peak heights as a function of magnetic field is investigated experimentally in a Ge-Si nanowire quantum dot. Strong spin-orbit coupling in this hole-gas system leads to antilocalization of Coulomb blockade peaks, consistent with theory. In particular, the peak height distribution has its maximum away from zero at zero magnetic field, with an average that decreases with increasing field. Magnetoconductance in the open-wire regime places a bound on the spin-orbit length ($l_{so}$ < 20 nm), consistent with values extracted in the Coulomb blockade regime ($l_{so}$ < 25 nm).

cond-mat.mes-hall↗

arXiv2008

Spin states of the first four holes in a silicon nanowire quantum dot

We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at perpendicular magnetic fields reveal the Zeeman splitting of a single hole in silicon. We are able to determine the ground-state spin configuration for one to four holes occupying the quantum dot and find a spin filling with alternating spin-down and spin-up holes, which is confirmed by magnetospectroscopy up to 9T. Additionally, a so far inexplicable feature in single-charge quantum dots in many materials systems is analyzed in detail. We observe excitations of the zero-hole ground-state energy of the quantum dot, which cannot correspond to electronic or Zeeman states. We show that the most likely explanation is acoustic phonon emission to a cavity between the two contacts to the nanowire.

cond-mat.mes-hall↗

arXiv2007

Strong g-Factor Anisotropy in Hole Quantum Dots Defined in Ge/Si Nanowires

We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five top gate electrodes with a periodicity of 80 nm, insulated from the wire by a 20 nm-thick HfO_2 dielectric film. Low-temperature transport measurements were used to investigate the magnetic field dependence of Coulomb blockade peaks in a single quantum dot and indicate a strongly anisotropic g-factor with |g_para| = 0.60 +/- 0.03 and |g_perp| < 0.12.

cond-mat.mes-hall↗

arXiv2002

Plastic Deformations in Mechanically Strained Single-Walled Carbon Nanotubes

AFM manipulation was used to controllably stretch individual metallic single-walled carbon nanotubes (SWNTs). We have found that SWNTs can sustain elongations as great as 30% without breaking. Scanned gate microscopy and transport measurements were used to probe the effects of the mechanical strain on the SWNT electronic properties, which revealed a strain-induced increase in intra-tube electronic scattering above a threshold strain of ~5-10%. These findings are consistent with theoretical calculations predicting the onset of plastic deformation and defect formation in carbon nanotubes.

cond-mat.mes-hall↗