arXiv subjects

C. Magén

Publications and source records attributed to C. Magén.

3 recordsLinked to original sources

arXiv2019

Nanowire magnetic force sensors fabricated by focused electron beam induced deposition

We demonstrate the use of individual magnetic nanowires (NWs), grown by focused electron beam induced deposition (FEBID), as scanning magnetic force sensors. Measurements of their mechanical susceptibility, thermal motion, and magnetic response show that the NWs posses high-quality flexural mechanical modes and a strong remanent magnetization pointing along their long axis. Together, these properties make the NWs excellent sensors of weak magnetic field patterns, as confirmed by calibration measurements on a micron-sized current-carrying wire and magnetic scanning probe images of a permalloy disk. The flexibility of FEBID in terms of the composition, geometry, and growth location of the resulting NWs, makes it ideal for fabricating scanning probes specifically designed for imaging subtle patterns of magnetization or current density.

cond-mat.mes-hall↗

arXiv2015

Origin of inverse Rashba-Edelstein effect at Cu/Bi interface using lateral spin valves

The spin transport and spin-to-charge current conversion properties of bismuth are investigated using permalloy/copper/bismuth (Py/Cu/Bi)lateral spin valve structures. The spin current is strongly absorbed at the surface of Bi, leading to ultra-short spin diffusion lengths. A spin-to-charge current conversion is measured, which is attributed to the inverse Rashba-Edelstein effect at the Cu/Bi interface. The spin-current-induced charge current is found to change direction with increasing temperature. A theoretical analysis relates this behavior to the complex spin structure and dispersion of the surface states at the Fermi energy. The understanding of this phenomenon opens novel possibilities to exploit spin-orbit coupling to create, manipulate, and detect spin currents in 2D systems.

cond-mat.mes-hall↗

arXiv2014

Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by Germanium doping

We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with Germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of Germanium at concentrations above $10^{20}\,\text{cm}^{-3}$ shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration a degradation of the photoluminescence properties is not observed.

cond-mat.mtrl-sci↗