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C. Marianetti

Publications and source records attributed to C. Marianetti.

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Electronic correlations and topology in Kondo insulator PuB$_6$

Utilizing a combination of dynamical mean field theory and density functional theory (DMFT/DFT), it has been theoretically proposed that PuB$_6$ is a strongly correlated topological insulator characterized by nontrivial $\mathbf{Z}_{2}$ topological invariants and metallic surface states (\textit{X. Deng et al., Phys. Rev. Lett. 111, 176404 (2013)}). Here, we demonstrate through low-temperature magneto-transport measurements and first-principles calculations that PuB$6$ exhibits characteristics of a topological Kondo insulating state. These features include a transition in electrical resistivity from high-temperature, thermally activated behavior with a narrow gap at the Fermi level ($\Delta{\rho} \sim$ 20 meV) to a distinctive low-temperature plateau, as well as a surface-to-volume dependence of electrical resistivity at low temperatures. The topological nature of PuB$_6$ is further supported by the theoretical calculations, which show that GGA+$U$ is capable of capturing electronic, topological, and lattice properties of PuB$_6$ with much lower computational cost than DMFT.

cond-mat.str-el

Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides

Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency.

cond-mat.mtrl-sci