arXiv subjects

C. Merlassino

Publications and source records attributed to C. Merlassino.

3 recordsLinked to original sources

arXiv2022

A Muon Collider Facility for Physics Discovery

Muon colliders provide a unique route to deliver high energy collisions that enable discovery searches and precision measurements to extend our understanding of the fundamental laws of physics. The muon collider design aims to deliver physics reach at the highest energies with costs, power consumption and on a time scale that may prove favorable relative to other proposed facilities. In this context, a new international collaboration has formed to further extend the design concepts and performance studies of such a machine. This effort is focused on delivering the elements of a $\sim$10 TeV center of mass (CM) energy design to explore the physics energy frontier. The path to such a machine may pass through lower energy options. Currently a 3 TeV CM stage is considered. Other energy stages could also be explored, e.g. an s-channel Higgs Factory operating at 125 GeV CM. We describe the status of the R&D and design effort towards such a machine and lay out a plan to bring these concepts to maturity as a tool for the high energy physics community.

physics.acc-ph↗

arXiv2017

Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate

In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from $\mathrm{80}$ to $\mathrm{1000~\Omega \cdot cm}$. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.

physics.ins-det↗

arXiv2016

Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes

HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1\cdot 10^{14}$ and $5\cdot 10^{15}$ 1-MeV-n$_\textrm{eq}$/cm$^2$. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of $85\,$V. The sample irradiated to a fluence of $1\cdot 10^{15}$ n$_\textrm{eq}$/cm$^2$ - a relevant value for a large volume of the upgraded tracker - exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.

physics.ins-det↗