arXiv subjects

C. R. Dean

Publications and source records attributed to C. R. Dean.

25 records · Page 2Linked to original sources

arXiv2010

Multicomponent fractional quantum Hall effect in graphene

We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be explained by strongly interacting composite Fermions with full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured from temperature dependent transport to be up 10 times larger than in any other semiconductor system. The remarkable strength and unusual hierarcy of the FQHE described here provides a unique opportunity to probe correlated behavior in the presence of expanded quantum degrees of freedom.

cond-mat.mes-hall↗

arXiv2010

Boron nitride substrates for high-quality graphene electronics

Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement in device quality[13,14], this geometry imposes severe limitations on device architecture and functionality. Realization of suspended-like sample quality in a substrate supported geometry is essential to the future progress of graphene technology. In this Letter, we report the fabrication and characterization of high quality exfoliated mono- and bilayer graphene (MLG and BLG) devices on single crystal hexagonal boron nitride (h-BN) substrates, by a mechanical transfer process. Variable-temperature magnetotransport measurements demonstrate that graphene devices on h-BN exhibit enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping in comparison with SiO2-supported devices. The ability to assemble crystalline layered materials in a controlled way sets the stage for new advancements in graphene electronics and enables realization of more complex graphene heterostructres.

cond-mat.mes-hall↗

arXiv2009

Wigner Crystallization in a Quasi-3D Electronic System

When a strong magnetic field is applied perpendicularly (along z) to a sheet confining electrons to two dimensions (x-y), highly correlated states emerge as a result of the interplay between electron-electron interactions, confinement and disorder. These so-called fractional quantum Hall (FQH) liquids form a series of states which ultimately give way to a periodic electron solid that crystallizes at high magnetic fields. This quantum phase of electrons has been identified previously as a disorder-pinned two-dimensional Wigner crystal with broken translational symmetry in the x-y plane. Here, we report our discovery of a new insulating quantum phase of electrons when a very high magnetic field, up to 45T, is applied in a geometry parallel (y-direction) to the two-dimensional electron sheet. Our data point towards this new quantum phase being an electron solid in a "quasi-3D" configuration induced by orbital coupling with the parallel field.

cond-mat.mes-hall↗

arXiv2009

Current-induced nuclear-spin activation in a two-dimensional electron gas

Electrically detected nuclear magnetic resonance was studied in detail in a two-dimensional electron gas as a function of current bias and temperature. We show that applying a relatively modest dc-current bias, I_dc ~ 0.5 microAmps, can induce a re-entrant and even enhanced nuclear spin signal compared with the signal obtained under similar thermal equilibrium conditions at zero current bias. Our observations suggest that dynamic nuclear spin polarization by small current flow is possible in a two-dimensional electron gas, allowing for easy manipulation of the nuclear spin by simple switching of a dc current.

cond-mat.mes-hall↗

arXiv2008

Contrasting Behavior of the 5/2 and 7/3 Fractional Quantum Hall Effect in a Tilted Field

Using a tilted field geometry, the effect of an in-plane magnetic field on the even denominator nu = 5/2 fractional quantum Hall state is studied. The energy gap of the nu = 5/2 state is found to collapse linearly with the in-plane magnetic field above ~0.5 T. In contrast, a strong enhancement of the gap is observed for the nu = 7/3 state. The radically distinct tilted-field behaviour between the two states is discussed in terms of Zeeman and magneto-orbital coupling within the context of the proposed Moore-Read pfaffian wavefunction for the 5/2 fractional quantum Hall effect.

cond-mat.mes-hall↗

arXiv2008

Intrinsic Gap of the nu=5/2 Fractional Quantum Hall State

The fractional quantum Hall effect is observed at low field, in a regime where the cyclotron energy is smaller than the Coulomb interaction. The nu=5/2 excitation gap is measured to be 262+/-15 mK at ~2.6 T, in good agreement with previous measurements performed on samples with similar mobility, but with electronic density larger by a factor of two. The role of disorder on the nu=5/2 gap is examined. Comparison between experiment and theory indicates that a large discrepancy remains for the intrinsic gap extrapolated from the infinite mobility (zero disorder) limit. In contrast, no such large discrepancy is found for the nu=1/3 Laughlin state. The observation of the nu=5/2 state in the low-field regime implies that inclusion of non-perturbative Landau level mixing may be necessary to better understand the energetics of half-filled fractional quantum hall liquids.

cond-mat.mes-hall↗

arXiv2007

Resistively Detected NMR in Quantum Hall States: Investigation of the anomalous lineshape near $ν=1$

A study of the resistively detected nuclear magnetic resonance (RDNMR) lineshape in the vicinity of $ν=1$ was performed on a high-mobility 2D electron gas formed in GaAs/AlGaAs. In higher Landau levels, application of an RF field at the nuclear magnetic resonance frequency coincides with an observed minimum in the longitudinal resistance, as predicted by the simple hyperfine interaction picture. Near $ν=1$ however, an anomalous dispersive lineshape is observed where a resistance peak follows the usual minimum. In an effort to understand the origin of this anomalous peak we have studied the resonance under various RF and sample conditions. Interestingly, we show that the lineshape can be completely inverted by simply applying a DC current. We interpret this as evidence that the minima and maxima in the lineshape originate from two distinct mechanisms.

cond-mat.mes-hall↗