arXiv subjects

C. S. A. Müller

Publications and source records attributed to C. S. A. Müller.

4 recordsLinked to original sources

arXiv2026

Gate induced strain on a two-dimensional hole gas in silicon

We show the effect of gate-induced strain on the valence band of a silicon (Si) metal oxide semiconductor (MOS) confined two-dimensional hole gas (2DHG). Increasing aluminum gate thickness, and thereby the strain in the channel, results in the onset of a second subband contributing to Shubnikov-de Haas oscillations. Temperature-dependent magnetotransport measurements reveal distinct cyclotron masses of $m_c^*=(0.36\pm0.04)m_0$ and $m_c^*=(0.49\pm0.02)m_0$. The measured cyclotron masses differ from those expected for an idealized heavy-hole (HH)/light-hole (LH) picture, reflecting the combined influence of quantum confinement, strain, and HH-LH mixing on the valence band.

cond-mat.mes-hall↗

arXiv2025

Quantum Hall effect in lightly hydrogenated graphene

We have measured the quantum Hall effect in monolayer graphene samples that were exposed to a cold hydrogen plasma leading to a hydrogenation level of a few percent. Compared to pristine graphene, the Landau level distance significantly decreases in the hydrogenated structures, and its field dependence changes from square root type to linear. From this observation we conclude that the band structure in hydrogenated graphene changes from a linear Dirac-Weyl type dispersion to a quadratic one with an effective electron mass $m_e^* = 0.24~m_e$. This is in good agreement with ab-initio band structure calculations of hydrogen decorated graphene monolayer.

cond-mat.mes-hall↗

arXiv2022

Fermi surface and nested magnetic breakdown in WTe2

We report a detailed Shubnikov-de Haas (SdH) study on the Weyl type-II semimetal WTe2 in magnetic fields up to 29 T. By using the SdH results to guide our density functional theory calculations, we are able to accurately determine its Fermi surface by employing a moderate Hubbard U term, which is an essential step in explaining the unusual electronic properties of this much studied material. In addition to the fundamental orbits, we observe magnetic breakdown, which can consistently be explained within the model of a Russian-doll-nested Fermi surface of electron and hole pockets. The onset of magnetic breakdown in WTe2 is solely determined by impurity damping in contrast to magnetic breakdown scenarios in other metallic systems.

cond-mat.mes-hall↗

arXiv2020

Determination of the Fermi surface and field-induced quasi-particle tunneling around the Dirac nodal-loop in ZrSiS

Unambiguous and complete determination of the Fermi surface is a primary step in understanding the electronic properties of topical metals and semi-metals, but only in a relatively few cases has this goal been realized. In this work, we present a systematic high-field quantum oscillation study up to 35 T on ZrSiS, a textbook example of a nodal-line semimetal with only linearly dispersive bands crossing the Fermi energy. The topology of the Fermi surface is determined with unprecedented precision and all pockets are identified by comparing the measured angle dependence of the quantum oscillations to density functional theory calculations. Comparison of the Shubnikov-de Haas and de Haas-van Alphen oscillations at low temperatures and analysis of the respective Dingle plots reveal the presence of significantly enhanced scattering on the electron pocket. Above a threshold field that is aligned along the c-axis of the crystal, the specific cage-like Fermi surface of ZrSiS allows for electron-hole tunneling to occur across finite gaps in momentum space leading to quantum oscillations with a complex frequency spectrum. Additional high-frequency quantum oscillations signify magnetic breakdown orbits that encircle the entire Dirac nodal loop. We suggest that the persistence of quantum oscillations in the resistivity to high temperatures is caused by Stark interference between orbits of nearly equal masses.

cond-mat.mes-hall↗