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C. S. Park

Publications and source records attributed to C. S. Park.

24 records · Page 2Linked to original sources

Branching fractions for chi_cJ -> p p-bar pi^0, p p-bar eta, and p p-bar omega

Using a sample of 25.9 million psi(2S) decays acquired with the CLEO-c detector at the CESR e^+e^- collider, we report branching fractions for the decays chi_cJ -> p p-bar pi^0, p p-bar eta, and p p-bar omega, with J=0,1,2. Our results for B(chi_cJ-> p p-bar pi^0) and B(chi_cJ-> p p-bar eta) are consistent with, but more precise than, previous measurements. Furthermore, we include the first measurement of B(chi_cJ-> p p-bar omega).

hep-ex↗

Analysis of D+ to K- pi+ e+ nu_e and D+ to K- pi+ mu+ nu_mu Semileptonic Decays

Using a large sample (~11800 events) of D^+ into K^- pi^+ e^+ nu_e and D^+ into K^- pi^+ mu^+ nu_mu decays collected by the CLEO-c detector running at the psi(3770), we measure the helicity basis form factors free from the assumptions of spectroscopic pole dominance and provide new, accurate measurements of the absolute branching fractions for D^+ into K^- pi^+ e^+ nu_e and D^+ into K^- pi^+ mu^+ nu_mu decays. We find branching fractions which are consistent with previous world averages. Our measured helicity basis form factors are consistent with the spectroscopic pole dominance predictions for the three main helicity basis form factors describing D^+ into anti-K*0 ell^+ nu_mu decay. The ability to analyze D^+ into K^- pi^+ mu^+ nu_mu allows us to make the first non-parametric measurements of the mass-suppressed form factor. Our result is inconsistent with existing Lattice QCD calculations. Finally, we measure the form factor that controls non-resonant s-wave interference with the D^+ into anti-K*0 ell^+ nu_mu amplitude and search for evidence of possible additional non-resonant d-wave or f-wave interference with the anti-K*0.

hep-ex↗

Large-scale Graphitic Thin Films Synthesized on Ni and Transferred to Insulators: Structural and Electronic Properties

We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films of size up to several mm's have been synthesized. Structural characterizations by atomic force microscopy (AFM), scanning tunneling microscopy (STM), cross-sectional transmission electron microscopy (XTEM) and Raman spectroscopy confirm that such large scale graphitic thin films (GTF) contain both thick graphite regions and thin regions of few layer graphene. The films also contain many wrinkles, with sharply-bent tips and dislocations revealed by XTEM, yielding insights on the growth and buckling processes of the GTF. Measurements on mm-scale back-gated transistor devices fabricated from the transferred GTF show ambipolar field effect with resistance modulation ~50% and carrier mobilities reaching ~2000 cm^2/Vs. We also demonstrate quantum transport of carriers with phase coherence length over 0.2 $μ$m from the observation of 2D weak localization in low temperature magneto-transport measurements. Our results show that despite the non-uniformity and surface roughness, such large-scale, flexible thin films can have electronic properties promising for device applications.

cond-mat.mtrl-sci↗

Measurement of the eta_b(1S) mass and the branching fraction for Upsilon(3S) --> gamma eta_b(1S)

We report evidence for the ground state of bottomonium, eta_b(1S), in the radiative decay Upsilon(3S) --> gamma eta_b in e^+e^- annihilation data taken with the CLEO III detector. Using 6 million Upsilon(3S) decays, and assuming Gamma(eta_b) = 10 MeV/c^2, we obtain B(Upsilon(3S) --> gamma eta_b) = (7.1 +- 1.8 +- 1.1) X 10^{-4}, where the first error is statistical and the second is systematic. The statistical significance is about 4 sigma. The mass is determined to be M(eta_b) = 9391.8 +- 6.6 +- 2.0 MeV/c^2, which corresponds to the hyperfine splitting Delta M_{hf}(1S)_b = 68.5 +- 6.6 +- 2.0 MeV/c^2. Using 9 million Upsilon(2S) decays, we place an upper limit on the corresponding Y(2S) decay, B(Y(2S) --> gamma eta_b) < 8.4 X 10^{-4} at 90 % confidence level.

hep-ex↗

Modeling Dipolar and Quadrupolar Defect Structures generated by Chiral Islands in Freely-Suspended Liquid Crystal Films

We report a detailed theoretical analysis of novel quadrupolar interactions observed between islands, which are disk-like inclusions of extra layers, floating in thin, freely suspended smectic C liquid crystal films. Strong tangential anchoring at the island boundaries result in a strength +1 chiral defect in each island and a companion -1 defect in the film, these forming a topological dipole. While islands of the same handedness form linear chains with the topological dipoles pointing in the same direction, as reported in the literature, islands with different handedness form compact quadrupolar structures with the associated dipoles pointing in opposite directions. The interaction between such heterochiral island--defect pairs is complex, with the defects moving to minimize the director field distortion as the distance between the islands changes. The details of the inter-island potential and the trajectories of the -1 defects depend strongly on the elastic anisotropy of the liquid crystal, which can be modified in the experiments by varying the material chirality of the liquid crystal. A Landau model that describes the energetics of freely mobile defects is solved numerically to find equilibrium configurations for a wide range of parameters.

cond-mat.soft↗

Metastability from Photoluminescence of n-type GaN

We measured the temperature dependence of photoluminescence involved with the metastability of unintentionally doped GaN. Reaction energy U of donor atom is 0.1eV and shallow donor is more stable than deep center. The impurity transition was applied to unintentionally doped GaN at low temperature and reaction energy U was provided for shallow-deep transition. We propose that the origin of DX center in unintentionally doped wurtize GaN is considered to be an oxygen impurity instead of silicon.

cond-mat.mtrl-sci↗