arXiv subjects

C. Seoanez

Publications and source records attributed to C. Seoanez.

5 recordsLinked to original sources

arXiv2008

Surface dissipation in nanoelectromechanical systems: Unified description with the standard tunneling model and effects of metallic electrodes

By modifying and extending recent ideas [C. Seoanez et al., Europhys. Lett. 78, 60002 (2007)], a theoretical framework to describe dissipation processes in the surfaces of vibrating micro- and nanoelectromechanical devices, thought to be the main source of friction at low temperatures, is presented. Quality factors as well as frequency shifts of flexural and torsional modes in doubly clamped beams and cantilevers are given, showing the scaling with dimensions, temperature, and other relevant parameters of these systems. Full agreement with experimental observations is not obtained, leading to a discussion of limitations and possible modifications of the scheme to reach a quantitative fitting to experiments. For nanoelectromechanical systems covered with metallic electrodes, the friction due to electrostatic interaction between the flowing electrons and static charges in the device and substrate is also studied.

cond-mat.mes-hall↗

arXiv2008

Electrostatic interactions between graphene layers and their environment

We analyze the electrostatic interactions between a single graphene layer and a SiO$_2$ susbtrate, and other materials which may exist in its environment. We obtain that the leading effects arise from the polar modes at the SiO$_2$ surface, and water molecules, which may form layers between the graphene sheet and the substrate. The strength of the interactions implies that graphene is pinned to the substrate at distances greater than a few lattice spacings. The implications for graphene nanoelectromechanical systems, and for the interaction between graphene and a STM tip are also considered.

cond-mat.mtrl-sci↗

arXiv2007

Dissipation in finite systems: Semiconductor NEMS, graphene NEMS, and metallic nanoparticles

This thesis studies three kinds of mesoscopic systems and how one of their collective degrees of freedom is affected by a dissipative environment: a)Nanoelectromechanical systems based on semiconductor materials, and how surface friction processes limit the quality factor of their vibrational eigenmodes at low temperatures, causing as well a frequency shift; b)Graphene - based nanoresonators, and several damping mechanisms limiting the quality factor of its fundamental bending (flexural) eigenmode, and c)The dissipative dynamics of the surface plasmon created in a metallic nanocluster by a laser pulse, discussing the validity and limitations of a very common theoretical model used for its description.

cond-mat.mes-hall↗

arXiv2007

Dissipation in graphene and nanotube resonators

Different damping mechanisms in graphene nanoresonators are studied: charges in the substrate, ohmic losses in the substrate and the graphene sheet, breaking and healing of surface bonds (Velcro effect), two level systems, attachment losses, and thermoelastic losses. We find that, for realistic structures and contrary to semiconductor resonators, dissipation is dominated by ohmic losses in the graphene layer and metallic gate. An extension of this study to carbon nanotube-based resonators is presented.

cond-mat.mes-hall↗

arXiv2007

Dissipation due to two-level systems in nano-mechanical devices

We analyze the dissipation of the frequency vibrations of nano-mechanical devices. We show that the coupling between flexural modes and two-level systems leads to sub-ohmic dissipation. The inverse quality factor of the low energy vibrations depends on temperature as $Q^{-1} (T) \approx Q_0 + C T^{1/3}$, providing a quantitative description of the experimental data.

cond-mat.mes-hall↗