arXiv subjects

C. Stampfer

Publications and source records attributed to C. Stampfer.

At least 73 records · Page 4Linked to original sources

arXiv2010

Spin States in Graphene Quantum Dots

We investigate ground and excited state transport through small (d = 70 nm) graphene quantum dots. The successive spin filling of orbital states is detected by measuring the ground state energy as a function of a magnetic field. For a magnetic field in-plane of the quantum dot the Zemann splitting of spin states is measured. The results are compatible with a g-factor of 2 and we detect a spin-filling sequence for a series of states which is reasonable given the strength of exchange interaction effects expected for graphene.

cond-mat.mes-hall↗

arXiv2010

Quantum capacitance and density of states of graphene

We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significantly larger than zero at and around the charge neutrality point. This finding is interpreted to be a result of potential fluctuations with amplitudes of the order of 100 meV in good agreement with scanning single-electron transistor measurements on bulk graphene and transport studies on nanoribbons.

cond-mat.mes-hall↗

arXiv2010

Observation of excited states in a graphene double quantum dot

We study a graphene double quantum dot in different coupling regimes. Despite the strong capacitive coupling between the dots, the tunnel coupling is below the experimental resolution. We observe additional structures inside the finite-bias triangles, part of which can be attributed to electronic excited dot states, while others are probably due to modulations of the transmission of the tunnel barriers connecting the system to source and drain leads.

cond-mat.mes-hall↗

arXiv2009

Electron-Hole Crossover in Graphene Quantum Dots

We investigate the addition spectrum of a graphene quantum dot in the vicinity of the electron-hole crossover as a function of perpendicular magnetic field. Coulomb blockade resonances of the 50 nm wide dot are visible at all gate voltages across the transport gap ranging from hole to electron transport. The magnetic field dependence of more than 50 states displays the unique complex evolution of the diamagnetic spectrum of a graphene dot from the low-field regime to the Landau regime with the n=0 Landau level situated in the center of the transport gap marking the electron-hole crossover. The average peak spacing in the energy region around the crossover decreases with increasing magnetic field. In the vicinity of the charge neutrality point we observe a well resolved and rich excited state spectrum.

cond-mat.mtrl-sci↗

arXiv2009

Graphene quantum dots in perpendicular magnetic fields

We report transport experiments on graphene quantum dots. We focus on excited state spectra in the near vicinity of the charge neutrality point and signatures of the electron-hole crossover as a function of a perpendicular magnetic field. Coulomb blockade resonances of a 50 nm wide and 80 nm long dot are visible at all gate voltages across the transport gap ranging from hole to electron transport. The magnetic field dependence of more than 40 states as a function of the back gate voltage can be interpreted in terms of the unique evolution of the diamagnetic spectrum of a graphene dot including the formation of the E = 0 Landau level, situated in the center of the transport gap, and marking the electron-hole crossover.

cond-mat.mes-hall↗

arXiv2009

Transport through graphene double dots

We present Coulomb blockade measurements in a graphene double dot system. The coupling of the dots to the leads and between the dots can be tuned by graphene in-plane gates. The coupling is a non-monotonic function of the gate voltage. Using a purely capacitive model, we extract all relevant energy scales of the double dot system.

cond-mat.mes-hall↗

arXiv2009

Observation of excited states in a graphene quantum dot

We demonstrate that excited states in single-layer graphene quantum dots can be detected via direct transport experiments. Coulomb diamond measurements show distinct features of sequential tunneling through an excited state. Moreover, the onset of inelastic cotunneling in the diamond region could be detected. For low magnetic fields, the positions of the single-particle energy levels fluctuate on the scale of a flux quantum penetrating the dot area. For higher magnetic fields, the transition to the formation of Landau levels is observed. Estimates based on the linear energy-momentum relation of graphene give carrier numbers of the order of 10 for our device.

cond-mat.mes-hall↗

arXiv2009

Transport gap in side-gated graphene constrictions

We present measurements on side gated graphene constrictions of different geometries. We characterize the transport gap by its width in back gate voltage and compare this to an analysis based on Coulomb blockade measurements of localized states. We study the effect of an applied side gate voltage on the transport gap and show that high side gate voltages lift the suppression of the conductance. Finally we study the effect of an applied magnetic field and demonstrate the presence of edge states in the constriction.

cond-mat.mes-hall↗

arXiv2008

Energy gaps in etched graphene nanoribbons

Transport measurements on an etched graphene nanoribbon are presented. It is shown that two distinct voltage scales can be experimentally extracted that characterize the parameter region of suppressed conductance at low charge density in the ribbon. One of them is related to the charging energy of localized states, the other to the strength of the disorder potential. The lever arms of gates vary by up to 30% for different localized states which must therefore be spread in position along the ribbon. A single-electron transistor is used to prove the addition of individual electrons to the localized states. In our sample the characteristic charging energy is of the order of 10 meV, the characteristic strength of the disorder potential of the order of 100 meV.

cond-mat.dis-nn↗

arXiv2008

Charge Detection in Graphene Quantum Dots

We report measurements on a graphene quantum dot with an integrated graphene charge detector. The quantum dot device consists of a graphene island (diameter approx. 200 nm) connected to source and drain contacts via two narrow graphene constrictions. From Coulomb diamond measurements a charging energy of 4.3 meV is extracted. The charge detector is based on a 45 nm wide graphene nanoribbon placed approx. 60 nm from the island. We show that resonances in the nanoribbon can be used to detect individual charging events on the quantum dot. The charging induced potential change on the quantum dot causes a step-like change of the current in the charge detector. The relative change of the current ranges from 10% up to 60% for detecting individual charging events.

cond-mat.mes-hall↗

arXiv2008

Graphene quantum dots: Beyond a Dirac billiard

We present realistic simulations of quantum confinement effects in ballistic graphene quantum dots with linear dimensions of 10 to 40 nm. We determine wavefunctions and energy level statistics in the presence of disorder resulting from edge roughness, charge impurities, or short-ranged scatterers. Marked deviations from a simple Dirac billiard for massless fermions are found. We find a remarkably stable dependence of the nearest-neighbor level spacing on edge roughness suggesting that the roughness of fabricated devices can be potentially characterized by the distribution of measured Coulomb blockade peaks.

cond-mat.mes-hall↗

arXiv2008

Tunable Graphene Single Electron Transistor

We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence of localized states in the barriers. We investigate energy scales for the tunneling gap, the resonances in the constrictions and for the Coulomb blockade resonances. From Coulomb diamond measurements in different device configurations (i.e. barrier configurations) we extract a charging energy of 3.4 meV and estimate a characteristic energy scale for the constriction resonances of 10 meV.

cond-mat.mes-hall↗

arXiv2008

Coulomb oscillations in three-layer graphene nanostructures

We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain contacts. Three lateral graphene gates are used to electrostatically tune the device. An individual three-layer graphene constriction has been investigated separately showing a transport gap near the charge neutrality point. The graphene tunneling barriers show a strongly nonmonotonic coupling as function of gate voltage indicating the presence of localized states in the constrictions. We show Coulomb oscillations and Coulomb diamond measurements proving the functionality of the graphene SET. A charging energy of $\approx 0.6$ meV is extracted.

cond-mat.mes-hall↗

arXiv2007

Raman imaging of doping domains in graphene on SiO2

We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line -- the most significant Raman peak to identify single-layer graphene -- as a function of charging up to |n|~4 10^12 cm^-2. Contrary to the G line which exhibits a strong and symmetric stiffening with respect to electron and hole-doping, the 2D line shows a weak and slightly asymmetric stiffening for low doping. Additionally, the line width of the 2D line is, in contrast to the G line, doping-independent making this quantity a reliable measure for identifying single-layer graphene.

cond-mat.mtrl-sci↗

arXiv2007

Tunable Coulomb blockade in nanostructured graphene

We report on Coulomb blockade and Coulomb diamond measurements on an etched, tunable single-layer graphene quantum dot. The device consisting of a graphene island connected via two narrow graphene constrictions is fully tunable by three lateral graphene gates. Coulomb blockade resonances are observed and from Coulomb diamond measurements a charging energy of ~3.5 meV is extracted. For increasing temperatures we detect a peak broadening and a transmission increase of the nanostructured graphene barriers.

cond-mat.mes-hall↗

arXiv2007

Raman imaging and electronic properties of graphene

Graphite is a well-studied material with known electronic and optical properties. Graphene, on the other hand, which is just one layer of carbon atoms arranged in a hexagonal lattice, has been studied theoretically for quite some time but has only recently become accessible for experiments. Here we demonstrate how single- and multi-layer graphene can be unambiguously identified using Raman scattering. Furthermore, we use a scanning Raman set-up to image few-layer graphene flakes of various heights. In transport experiments we measure weak localization and conductance fluctuations in a graphene flake of about 7 monolayer thickness. We obtain a phase-coherence length of about 2 $μ$m at a temperature of 2 K. Furthermore we investigate the conductivity through single-layer graphene flakes and the tuning of electron and hole densities via a back gate.

cond-mat.mes-hall↗

arXiv2007

Local gating of a graphene Hall bar by graphene side gates

We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels within the Hall bar. This results in an average penetration depth of the side gate created field of approx. 90 nm. The side gates are also effective in the quantum Hall regime, and allow to modify the longitudinal and Hall resistances.

cond-mat.mes-hall↗

arXiv2006

Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene

We present Raman spectroscopy measurements on single- and few-layer graphene flakes. Using a scanning confocal approach we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force micrographs. Single-layer graphene can be distinguished from double- and few-layer by the width of the D' line: the single peak for single-layer graphene splits into different peaks for the double-layer. These findings are explained using the double-resonant Raman model based on ab-initio calculations of the electronic structure and of the phonon dispersion. We investigate the D line intensity and find no defects within the flake. A finite D line response originating from the edges can be attributed either to defects or to the breakdown of translational symmetry.

cond-mat.mes-hall↗