SearcharxivSearch

arXiv subjects

C. Vaju

Publications and source records attributed to C. Vaju.

3 recordsLinked to original sources

Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator

Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron doping or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material.

cond-mat.str-el

Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides

We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer size craters. The formed pattern can be indestructibly "read" by STM at lower voltage bias, thus allowing a 5 Tdots/inch2 dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa4Se8 might give new clues in the understanding of the Electric Pulse Induced Resistive Switching recently observed in this stoechiometric Mott insulator.

cond-mat.mtrl-sci

Spin dynamics and magnetic order in magnetically frustrated Tb2Sn2O7

We report a study of the geometrically frustrated magnetic material Tb2Sn2O7 by the positive muon spin relaxation technique. No signature of a static magnetically ordered state is detected while neutron magnetic reflections are observed in agreement with a published report. This is explained by the dynamical nature of the ground state of Tb2Sn2O7: the Tb3+ magnetic moment characteristic fluctuation time is ~ 10^{-10} s. The strong effect of the magnetic field on the muon spin-lattice relaxation rate at low fields indicates a large field-induced increase of the magnetic density of states of the collective excitations at low energy.

cond-mat.str-el