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Caihua Wan

Publications and source records attributed to Caihua Wan.

At least 19 recordsLinked to original sources
arXiv2026

Visualizing modified spin-wave wavefronts near magnetic defects and domains using nitrogen-vacancy centers

Direct, real-space imaging of spin-wave propagation and wavefronts in magnetic materials is crucial for advancing both fundamental understanding of spin dynamics and the development of functional devices. This, however, remains a significant challenge, especially in materials with complex magnetic characteristics at the nanoscale. Here, we employ scanning nitrogen-vacancy center spectroscopy to achieve visualization of spin waves in two archetypical magnetic films: yttrium-iron-garnet and lanthanum strontium manganese oxide. We reveal a wavelength-dependent spin-wave filtering effect near point-like magnetic scatterers and a modified spin wavefront in antiferromagnetically coupled stripe domains. The spin-wave characteristics are explained using micromagnetic simulations and analytical calculations. These findings point to possible fine control of spin-wave propagation near complex magnetic structures and extend the scope of spin-wave imaging based on nitrogen-vacancy centers beyond uniform magnets.

cond-mat.mes-hall↗
arXiv2026

True random number generation through stochastic magnonic bistability

True random number generators (TRNGs) underpin modern cryptography, yet existing implementations face fundamental trade-offs between speed, scalability, and entropy quality. Here, we demonstrate that stochastic switching in the bistable regime of spin-wave dynamics provides a physical entropy source for high-quality random number generation. Our magnonic random number generator (mRNG), based on a lithography-patterned microstrip on yttrium iron garnet (YIG), exploits thermal fluctuations near the nonlinear bistable regime to generate random bitstreams that pass all 15 NIST SP 800-22 statistical tests at rates with 20 Mb/s. We implement a random-bit multiplier using synchronized mRNG units and demonstrate scalability to 200-nm-wide nanoscale waveguides, establishing spin-wave bistability as a viable physical entropy source for integrated random number generation.

cond-mat.mtrl-sci↗
arXiv2025

Predictive Indicator of Critical Point in Equilibrium and Nonequilibrium Magnetic Systems

Determining critical points of phase transitions from partial data is essential to avoid abrupt system collapses and reducing experimental or computational costs. However, the complex physical systems and phase transition phenomena have long hindered the development of unified approaches applicable to both equilibrium and nonequilibrium phase transitions. In this work, we propose predictive indicators to determine critical points in equilibrium and nonequilibrium magnetic systems based on frequency-dependent response function. For equilibrium phase transition, such as magnetization switching under magnetic field, the static magnetization response function to a perturbing magnetic field diverges at the critical field, serving as a noise-resilient predictive indicator that also reflects the transition order and critical exponents. In contrast, for nonequilibrium phase transition, such as magnetization switching driven by spin-transfer torque, static response fails to signal criticality. Instead, the dynamic response at ferromagnetic resonance frequency diverges at the critical point, which is also robust against thermal noise. We further demonstrate that these static and dynamic indicators can be unified in the frame of first-order linear differential systems, offering a generalizable strategy for predicting criticality in both equilibrium and nonequilibrium transitions.

cond-mat.stat-mech↗
arXiv2025

Engineering-Oriented Design of Drift-Resilient MTJ Random Number Generator via Hybrid Control Strategies

Magnetic Tunnel Junctions (MTJs) have shown great promise as hardware sources for true random number generation (TRNG) due to their intrinsic stochastic switching behavior. However, practical deployment remains challenged by drift in switching probability caused by thermal fluctuations, device aging, and environmental instability. This work presents an engineering-oriented, drift-resilient MTJ-based TRNG architecture, enabled by a hybrid control strategy that combines self-stabilizing feedback with pulse width modulation. A key component is the Downcalibration-2 scheme, which updates the control parameter every two steps using only integer-resolution timing, ensuring excellent statistical quality without requiring bit discarding, pre-characterization, or external calibration. Extensive experimental measurements and numerical simulations demonstrate that this approach maintains stable randomness under dynamic temperature drift, using only simple digital logic. The proposed architecture offers high throughput, robustness, and scalability, making it well-suited for secure hardware applications, embedded systems, and edge computing environments.

physics.app-ph↗
arXiv2025

Bayesian Reasoning Enabled by Spin-Orbit Torque Magnetic Tunnel Junctions

Bayesian networks play an increasingly important role in data mining, inference, and reasoning with the rapid development of artificial intelligence. In this paper, we present proof-of-concept experiments demonstrating the use of spin-orbit torque magnetic tunnel junctions (SOT-MTJs) in Bayesian network reasoning. Not only can the target probability distribution function (PDF) of a Bayesian network be precisely formulated by a conditional probability table as usual but also quantitatively parameterized by a probabilistic forward propagating neuron network. Moreover, the parameters of the network can also approach the optimum through a simple point-by point training algorithm, by leveraging which we do not need to memorize all historical data nor statistically summarize conditional probabilities behind them, significantly improving storage efficiency and economizing data pretreatment. Furthermore, we developed a simple medical diagnostic system using the SOT-MTJ as a random number generator and sampler, showcasing the application of SOT-MTJ-based Bayesian reasoning. This SOT-MTJ-based Bayesian reasoning shows great promise in the field of artificial probabilistic neural network, broadening the scope of spintronic device applications and providing an efficient and low-storage solution for complex reasoning tasks.

physics.app-ph↗
arXiv2025

Probabilistic Greedy Algorithm Solver Using Magnetic Tunneling Junctions for Traveling Salesman Problem

Combinatorial optimization problems are foundational challenges in fields such as artificial intelligence, logistics, and network design. Traditional algorithms, including greedy methods and dynamic programming, often struggle to balance computational efficiency and solution quality, particularly as problem complexity scales. To overcome these limitations, we propose a novel and efficient probabilistic optimization framework that integrates true random number generators (TRNGs) based on spin-transfer torque magnetic tunneling junctions (STT-MTJs). The inherent stochastic switching behavior of STT-MTJs enables dynamic configurability of random number distributions, which we leverage to introduce controlled randomness into a probabilistic greedy algorithm. By tuning a temperature parameter, our algorithm seamlessly transitions between deterministic and stochastic strategies, effectively balancing exploration and exploitation. Furthermore, we apply this framework to the traveling salesman problem (TSP), showcasing its ability to consistently produce high-quality solutions across diverse problem scales. Our algorithm demonstrates superior performance in both solution quality and convergence speed compared to classical approaches, such as simulated annealing and genetic algorithms. Specifically, in larger TSP instances involving up to 70 cities, it retains its performance advantage, achieving near-optimal solutions with fewer iterations and reduced computational costs. This work highlights the potential of integrating MTJ-based TRNGs into optimization algorithms, paving the way for future applications in probabilistic computing and hardware-accelerated optimization.

physics.app-ph↗
arXiv2024

Anisotropic spin filtering by an altermagnetic barrier in magnetic tunnel junctions

The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM) materials which exhibit similar capability of spin-polarizing electrons with ferromagnets, it is a nature question whether the ALM insulators or semiconductors can also act as unique barriers for the spin splitting effect. Here, through first-principles calculations, we investigated the complex band structure of the ALM insulator FeF$_2$ and found that it possesses an anisotropic spin filtering effect: along the [001] direction of FeF$_2$, a current remains spin-neutral but has locally nonvanishing spin polarizations in the momentum space; moreover, along the [110] direction of FeF$_2$, a current will be globally spin-polarized by different attenuation lengths of oppositely spin-polarized electrons. Leveraging this anisotropic spin filtering effect, we designed two types of MTJs with the ALM barrier: ALM electrode/ALM insulator barrier/non-magnetic (NM) electrode and FM electrode/ALM insulator barrier/NM electrode, using RuO$_2$(001)/FeF$_2$/IrO$_2$ and CrO$_2$(110)/FeF$_2$/IrO$_2$ as the corresponding prototypes, respectively. We found that these two proposed MTJs exhibited the tunneling magnetoresistance (TMR) ratios of 216\% and 3956\%, by matching the conduction channels of the electrodes and the spin-resolved lowest decay rate of the barrier in the momentum space. Our work deepens and generalizes understanding toward the spin filtering effect for the rising ALM insulators and semiconductors, and broadens applications of the AFM spintronics.

cond-mat.mtrl-sci↗
arXiv2024

One-dimensional Photonic Crystal Structure Enhanced External-Magnetic-Field-Free Spintronic Terahertz High-Field Emitter

Intense terahertz (THz) radiation in free space offers multifaceted capabilities for accelerating electron, understanding the mesoscale architecture in (bio)materials, elementary excitation and so on. Recently popularized spintronic THz emitters (STEs) with their versatility such as ultra-broadband, cost-effectiveness, large-size and ease for-integration have become one of the most promising alternative for the next generation of intense THz sources. Nevertheless, the typical W| Co20Fe60B20 | Pt necessitates an external-magnetic-field to saturate magnetization for stable operation, limiting its scalability for achieving higher THz field with uniform distribution over larger sample areas. Here we demonstrate the methodologies of enhancing the high-field THz radiation of external-magnetic-field-free IrMn3 | Co20Fe60B20 |W heterostructure via optimizing the substrate with superior thermal conductivity and integrating a one-dimensional photonic crystal (PC) structure to maximize the radiation efficiency. Under the excitation of a Ti: sapphire femtosecond laser amplifier with central wavelength of 800 nm, pulse duration of 35 fs, and repetition rate of 1 kHz and maximum single pulse energy of 5.5 mJ, we successfully generate intense THz radiation with focal peak electric field up to 1.1 MV/cm with frequency range covering 0.1-10 THz without external-magnetic-fields. These high-field STEs will also enable other applications such as ultra-broadband high-field THz spectroscopy and polarization-based large-size strong-field THz imaging.

physics.optics↗
arXiv2024

Harnessing Interlayer Magnetic Coupling for Efficient, Field-Free Current-Induced Magnetization Switching in a Magnetic Insulator

Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation spintronic applications. However, due to the localized magnetic moments and the complex metal-oxide interface between magnetic insulators and heavy metals, spin-functional Dzyaloshinskii-Moriya interactions or spin Hall and Edelstein effects are weak, which diminishes the performance of these typical building blocks for spintronic devices. Here, we exploit the exchange coupling between metallic and insulating magnets for efficient electrical manipulation of heavy metal/magnetic insulator heterostructures. By inserting a thin Co layer, we enhance the spin-orbit torque efficiency by more than 20 times, which significantly reduces the switching current density. Moreover, we demonstrate field-free current-induced magnetization switching caused by a symmetry-breaking non-collinear magnetic texture. Our work launches magnetic insulators as an alternative platform for low-power spintronic devices.

cond-mat.mtrl-sci↗
arXiv2024

Observation of non-volatile anomalous Nernst effect in altermagnet with collinear Néel vector

Anomalous Nernst effect (ANE), a widely investigated transverse thermoelectric effect that converts waste heat into electrical energy with remarkable flexibility and integration capability, has been extended to antiferromagnets with non-collinear spin texture recently. ANE in compensated magnet with collinear Néel vector will bring more opportunities to construct magnetic-field-immune and ultrafast transverse thermoelectric converters, but remains unachieved for long. It is due to the degenerated band structure of traditional collinear compensated magnet excludes non-zero Berry curvature. Here, we realize non-volatile ANE in altermagnet Mn5Si3 thin film with collinear Neel vector, whose unique alternating spin-splitting band structure plays vital role in creating non-zero Berry curvature and hotpots of anomalous Nernst conductivity near band intersections. Interestingly, ANE is relatively weak in stoichiometric Mn5Si3, but undergoes a sixfold enhancement through strategically raising the Fermi level by additional Mn doping, indicating sensitive intrinsic influence from specific location of the Fermi level on ANE in altermagnet. Moreover, our investigation reveals a unique Neel-vector-dependent temperature-scaling relationship of anomalous Nernst conductivity in Mn5Si3. Our work not only fills a longstanding gap by confirming the presence of non-volatile ANE in collinear compensated magnet, but also enlightens thermoelectric physics related to exotic spin-splitting band structure in altermagnet.

cond-mat.mtrl-sci↗
arXiv2024

Electrical switching of the perpendicular Neel order in a collinear antiferromagnet

Electrical manipulation of magnetic order by current-induced spin torques lays the foundation for spintronics. One promising approach is encoding information in the Néel vector of antiferromagnetic (AFM) materials, particularly to collinear antiferromagnets with the perpendicular magnetic anisotropy (PMA), as the negligible stray fields and terahertz spin dynamics can enable memory devices with higher integration density and ultrafast speed. Here we demonstrate that the Néel order information in a prototypical collinear AFM insulator with PMA, Cr2O3, can be reliably readout via the anomalous Hall effect and efficiently switched by the spin-orbit torque (SOT) effect with a low current density of 5.8*106 A/cm2. Moreover, using Cr2O3 as a mediator, we electrically switch the magnetization of a Y3Fe5O12 film exchange-coupled to the Cr2O3 layer, unambiguously confirming the Néel order switching of the Cr2O3 layer. This work provides a significant basis for developing AFM memory devices based on collinear AFM materials with PMA.

physics.app-ph↗
arXiv2023

In-Plane Magnon Valve Effect in Magnetic Insulator/Heavy Metal/ Magnetic Insulator Device

We propose an in-plane magnon valve (MV), a sandwich structure composed of ferromagnetic insulator/heavy metal/ferromagnetic insulator (MI/HM/MI). When the magnetizations of the two MI layers are parallel, the longitudinal conductance in the HM layer is greater than that in the antiparallel state according to the magnetic proximity effect, termed as the in-plane magnon valve effect. We investigate the dependence of MV ratio (MVR), which is the relative change in longitudinal conductance between the parallel and antiparallel MV states, on the difference in electronic structure between magnetized and non-magnetized metal atoms, revealing that MVR can reach 100%. Additionally, the dependence of MVR on the thickness of metal layer is analyzed, revealing an exponential decrease with increasing thickness. Then we investigate the dependence of HM layer conductance on the relative angle between the magnetizations of two MI layers, illustrating the potential of MV as a magneto-sensitive magnonic sensor. We also investigate the effect of Joule heating on the measurement signal based on the spin Seebeck effect. Two designed configurations are proposed according to whether the electron current is parallel or perpendicular to the magnetization of the MI layer. In the parallel configuration, the transverse voltage differs between the parallel and antiparallel MV states. While in the perpendicular configuration, the longitudinal resistance differs. Quantitative numerical results indicate the feasibility of detecting a voltage signal using the first configuration in experiments. Our work contributes valuable insights for the design, development and integration of magnon devices

cond-mat.mes-hall↗
arXiv2023

Crystal facet orientated Altermagnets for detecting ferromagnetic and antiferromagnetic states by giant tunneling magnetoresistance effect

Emerging altermagnetic materials with vanishing net magnetizations and unique band structures have been envisioned as an ideal electrode to design antiferromagnetic tunnel junctions. Their momentum-resolved spin splitting in band structures defines a spin-polarized Fermi surface, which allows altermagnetic materials to polarize current as a ferromagnet, when the current flows along specific directions relevant to their altermagnetism. Here, we design an Altermagnet/Insulator barrier/Ferromagnet junction, renamed as altermagnetic tunnel junction (ATMTJ), using RuO$_2$/TiO$_2$/CrO$_2$ as a prototype. Through first-principles calculations, we investigate the tunneling properties of the ATMTJ along the [001] and [110] directions, which shows that the tunneling magnetoresistance (TMR) is almost zero when the current flows along the [001] direction, while it can reach as high as 6100\% with current flows along the [110] direction. The spin-resolved conduction channels of the altermagnetic RuO$_2$ electrode are found responsible for this momentum-dependent (or transport-direction-dependent) TMR effect. Furthermore, this ATMTJ can also be used to readout the Néel vector of the altermagnetic electrode RuO$_2$. Our work promotes the understanding toward the altermagnetic materials and provides an alternative way to design magnetic tunnel junctions with ultrahigh TMR ratios and robustness of the altermagnetic electrode against external disturbance, which broadens the application avenue for antiferromagnetic spintronic devices.

cond-mat.mtrl-sci↗
arXiv2023

Terahertz spin currents in nanoscale spatial resolution

The ability to generate, detect, and control coherent terahertz (THz) spin currents with femtosecond temporal and nanoscale spatial resolution has significant ramifications. The diffraction limit of concentrated THz radiation, which has a wavelength range of 5 μm-1.5 mm, has impeded the accumulation of nanodomain data of magnetic structures and spintronic dynamics despite its potential benefits. Contemporary spintronic optoelectronic apparatuses with dimensions 100 nm presented a challenge for researchers due to this restriction. In this study, we demonstrate the use of spintronic THz emission nanoscopy (STEN), which allows for the efficient injection and precise coherent detection of ultrafast THz spin currents at the nanoscale. Furthermore, STEN is an effective method that does not require invasion for characterising and etching nanoscale spintronic heterostructures. The cohesive integration of nanophotonics, nanospintronics, and THz-nano technology into a single platform is poised to accelerate the development of high-frequency spintronic optoelectronic nanodevices and their revolutionary technical applications.

physics.optics↗
arXiv2023

Observation of Fluctuation Spin Hall Effect in Antiferromagnet

The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition is proved as an effective mechanism to create an additional part of SHE, named as fluctuation spin Hall effect (FSHE). This FSHE enhances the SHA due to the AFM spin fluctuation between conduction electrons and local spins. We detect the FSHE with the inverse and direct spin Hall effect (ISHE and DSHE) set-up and their temperature (T) dependences in the Cr/MgO/Fe magnetic tunnel junctions (MTJs). The SHA is significantly enhanced when temperature is approached to the Néel temperature (T_N) and has a peak value of -0.34 at 200 K near T_N. This value is higher than the room-temperature value by 240% and comparable to that of heavy metals Ta and W. Furthermore, the spin Hall resistivity of Cr well fits the modeled T-dependence when T approaches T_N from low temperatures, implying the AFM spin fluctuation nature of strong SHA enhancement. Thus, this study demonstrates the critical spin fluctuation as a prospective way of increasing SHA and enriches the AFM material candidates for spin-orbitronic devices.

cond-mat.mes-hall↗
arXiv2023

Voltage-Controlled Magnon Transistor via Tunning Interfacial Exchange Coupling

Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact with an electric field and it is thus difficult to manipulate magnon transport by voltages straightforwardly. Here, we demonstrated a gate voltage ($V_{\rm g}$) applied on a nonmagnetic metal/magnetic insulator (NM/MI) interface that bended the energy band of the MI and then modulated the possibility for conduction electrons in the NM to tunnel into the MI can consequently enhance or weaken the spin-magnon conversion efficiency at the interface. A voltage-controlled magnon transistor based on the magnon-mediated electric current drag (MECD) effect in a Pt/Y$_{\rm 3}$Fe$_{\rm 5}$O$_{\rm 12}$ (YIG)/Pt sandwich was then experimentally realized with $V_{\rm g}$ modulating the magnitude of the MECD signal. The obtained efficiency (the change ratio between the MECD voltage at $\pm V_{\rm g}$) reached 10%/(MV/cm) at 300 K. This prototype of magnon transistor offers an effective scheme to control magnon transport by a gate voltage.

cond-mat.mes-hall↗
arXiv2022

Field-free spin-orbit torque switching enabled by interlayer Dzyaloshinskii-Moriya interaction

Perpendicularly magnetized structures that are switchable using a spin current under field-free conditions can potentially be applied in spin-orbit torque magnetic random-access memory(SOT-MRAM).Several structures have been developed;however,new structures with a simple stack structure and MRAM compatibility are urgently needed.Herein,a typical structure in a perpendicular spin-transfer torque MRAM,the Pt/Co multilayer and its synthetic antiferromagnetic counterpart with perpendicular magnetic anisotropy, was observed to possess an intrinsic interlayer chiral interaction between neighboring magnetic layers,namely the interlayer Dzyaloshinskii-Moriya interaction (DMI) effect. Furthermore, using a current parallel to the eigenvector of the interlayer DMI, we switched the perpendicular magnetization of both structures without a magnetic field, owing to the additional symmetry-breaking introduced by the interlayer DMI. This SOT switching scheme realized in the Pt/Co multilayer and its synthetic antiferromagnet structure may open a new avenue toward practical perpendicular SOT-MRAM and other SOT devices.

physics.app-ph↗
arXiv2022

A van der Waals Interface Hosting Two Groups of Magnetic Skyrmions

Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion based ultrahigh-density spin memory devices. Extending the field to two-dimensional van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g. thickness, twisting angle and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. We report a van der Waals interface, formed by two 2D ferromagnets Cr2Ge2Te6 and Fe3GeTe2 with a Curie temperature of ~65 K and ~205 K, respectively, hosting two groups of magnetic skyrmions. Two sets of topological Hall effect are observed below 60 K when Cr2Ge2Te6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy. Interestingly, the magnetic skyrmions persist in the heterostructure in the remanent state with zero applied magnetic field. Our results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.

cond-mat.mes-hall↗