arXiv subjects

Caio Lewenkopf

Publications and source records attributed to Caio Lewenkopf.

At least 37 records · Page 2Linked to original sources

arXiv2023

Structure-driven phase transitions in paracrystalline topological insulators

We study phase transitions driven by structural disorder in noncrystalline topological insulators. We introduce a procedural generation algorithm, the Perlin noise, typically used in computer graphics, to incorporate disorder to a two-dimensional lattice, allowing a continuous interpolation between a pristine and a random gas system, going through all different intermediate structural regimes, such as the paracrystalline and the amorphous phases. We define a two-band model, including intraorbital and interorbital mixings, on the structures generated by the algorithm and we find a sequence of structure-driven topological phase transitions characterized by changes in the topological Bott index, at which the insulating gap dynamically closes while evolving from the Bragg planes of the Brillouin zone towards the center. We interpret our results within the framework of Hosemann's paracrystal theory, in which distortion is included in the lattice structure factor and renormalizes the band-splitting parameter. Based on these results, we ultimately demonstrate the phenomenon of topological protection at its extreme.

cond-mat.mes-hall↗

arXiv2022

High-energy Landau levels in graphene beyond nearest-neighbor hopping processes: Corrections to the effective Dirac Hamiltonian

We study the Landau level spectrum of bulk graphene monolayers beyond the Dirac Hamiltonian with linear dispersion. We consider an effective Wannier-like tight-binding model obtained from ab initio calculations, that includes long-range electronic hopping integral terms. We employ the Haydock-Heine-Kelly recursive method to numerically compute the Landau level spectrum of bulk graphene in the quantum Hall regime and demonstrate that this method is both accurate and computationally much faster than the standard numerical approaches used for this kind of study. The Landau level energies are also obtained analytically for an effective Hamiltonian that accounts for up to third nearest neighbor hopping processes. We find an excellent agreement between both approaches. We also study the effect of disorder on the electronic spectrum. Our analysis helps to elucidate the discrepancy between theory and experiment for the high-energy Landau levels energies.

cond-mat.mes-hall↗

arXiv2022

Breakdown of topological protection due to non-magnetic edge disorder in two-dimensional materials in the Quantum Spin Hall phase

We study the suppression of the conductance quantization in quantum spin Hall systems by a combined effect of electronic interactions and edge disorder, that is ubiquitous in exfoliated and CVD grown 2D materials. We show that the interplay between the electronic localized states due to edge defects and electron-electron interactions gives rise to local magnetic moments, that break time-reversal symmetry and the topological protection of the edge states in 2D topological systems. Our results suggest that edge disorder leads to small deviations of a perfect quantized conductance in short samples and to a strong conductance suppression in long ones. Our analysis is based on on the Kane-Mele model, an unrestricted Hubbard mean field Hamiltonian and on a self-consistent recursive Green's functions technique to calculate the transport quantities.

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arXiv2022

Local equilibrium charge and spin currents in two-dimensional topological systems

We study the equilibrium and nonequilibrium electronic transport properties of multiprobe topological systems using a combination of the Landauer-Büttiker approach and nonequilibrium Green's functions techniques. We obtain general expressions for both nonequilibrium and equilibrium local electronic currents that, by suitable projections, allow one to compute charge, spin, valley, and orbital currents. We show that external magnetic fields give rise to equilibrium charge currents in mesoscopic system and study the latter in the quantum Hall regime. Likewise, a spin-orbit interaction leads to local equilibrium spin currents, that we analyze in the quantum spin Hall regime.

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arXiv2021

Amorphous Bi$_2$Se$_3$ structural, electronic, and topological nature by first-principles

Crystalline $\rm Bi_2Se_3$ is one of the most explored three-dimensional topological insulator, with a $0.3\;\rm eV$ energy gap making it promising for applications. Its amorphous counterpart could bring to light new possibilities for large scale synthesis and applications. Using ab initio molecular dynamics simulations, we have studied realistic amorphous $\rm Bi_2Se_3$ phases generated by different processes of melting, quenching, and annealing. Extensive structural and electronic characterizations show that the melting process induces an energy gap decrease ruled by growth of the defective local environments. This behavior dictates a weak stability of the topological phase to disorder, characterized by the spin Bott index. Interestingly, we identify the occurrence of topologically trivial surface states in amorphous $\rm Bi_2Se_3$ that show a strong resemblance with standard helical topological states. Our results and methods advance the search of topological phases in three-dimensional amorphous solids.

cond-mat.mtrl-sci↗

arXiv2021

Disorder effects of vacancies on the electronic transport properties of realistic topological insulators nanoribbons: the case of bismuthene

The robustness of topological materials against disorder and defects is presumed but has not been demonstrated explicitly in realistic systems. In this work, we use state-of-the-art density functional theory and recursive nonequilibrium Green's functions methods to study the effect of disorder in the electronic transport of long nanoribbons, up to 157 nm, as a function of vacancy concentration. In narrow nanoribbons, even for small vacancy concentrations, defect-like localized states give rise to hybridization between the edge states erasing topological protection and enabling backscattering events. We show that the topological protection is more robust for wide nanoribbons, but surprisingly it breaks down at moderate structural disorder. Our study helps to establish some bounds on defective bismuthene nanoribbons as promising candidates for spintronic applications.

cond-mat.mes-hall↗

arXiv2020

Structural and electronic properties of realistic two-dimensional amorphous topological insulators

We investigate the structure and electronic spectra properties of two-dimensional amorphous bismuthene structures and show that these systems are topological insulators. We employ realistic modeling of amorphous geometries together with density functional theory for electronic structure calculations. We investigate the system topological properties throughout the amorphization process and find that the robustness of the topological phase is associated with the spin-orbit coupling strength and size of the pristine topological gap. Using recursive non-equilibrium Green's function, we study the electronic transport properties of nanoribbons devices with lengths comparable to experimentally synthesized materials. We find a $2e^2/h$ conductance plateau within the topological gap and an onset of Anderson localization at the trivial insulator phase.

cond-mat.mtrl-sci↗

arXiv2019

Toward Realistic Amorphous Topological Insulators

The topological properties of materials are, until now, associated with the features of their crystalline structure, although translational symmetry is not an explicit requirement of the topological phases. Recent studies of hopping models on random lattices have demonstrated that amorphous model systems show a nontrivial topology. Using {\it ab initio} calculations we show that two-dimensional amorphous materials can also display topological insulator properties. More specifically, we present a realistic state-of-the-art study of the electronic and transport properties of amorphous bismuthene systems, showing that these materials are topological insulators. These systems are characterized by the topological index $\mathbb{Z}_{2}=1$ and bulk-edge duality, and their linear conductance is quantized, ${\cal G}=2e^{2}/h$, for Fermi energies within the topological gap. Our study opens the path to the experimental and theoretical investigation of amorphous topological insulator materials.

cond-mat.mtrl-sci↗

arXiv2019

Disordered Si:P nanostructures as switches and wires for nanodevices

Atomically precise placement of dopants in Si permits creating substitutional P nanowires by design. High-resolution images show that these wires are few atoms wide with some positioning disorder with respect to the substitutional Si structure sites. Disorder is expected to lead to electronic localization in one-dimensional (1D) - like structures. Experiments, however, report good transport properties in quasi-1D P nanoribbons. We investigate theoretically their electronic properties using an effective single-particle approach based on a linear combination of donor orbitals (LCDO), with a basis of six orbitals per donor site, thus keeping the ground state donor orbitals' oscillatory behavior due to interference among the states at the Si conduction band minima. Our model for the P positioning errors accounts for the presently achievable placement precision allowing to study the localization crossover. In addition, we show that a gate-like potential may control its conductance and localization length, suggesting the possible use of Si:P nanostructures as elements of quantum devices, such as nanoswitches and nanowires.

cond-mat.mes-hall↗

arXiv2018

An efficient method for computing the electronic transport properties of a multi-terminal system

We present a multiprobe recursive Green's function method to compute the transport properties of mesoscopic systems using the Landauer-Büttiker approach. By introducing an adaptive partition scheme, we map the multiprobe problem into the standard two-probe recursive Green's function method. We apply the method to compute the longitudinal and Hall resistances of a disordered graphene sample, a system of current interest. We show that the performance and accuracy of our method compares very well with other state-of-the-art schemes.

cond-mat.mes-hall↗

arXiv2017

Landauer-Büttiker approach to strongly coupled quantum thermodynamics: inside-outside duality of entropy evolution

We develop a Landauer-Büttiker theory of entropy evolution in time-dependent strongly coupled electron systems. This formalism naturally avoids the problem of system-bath distinction caused by the strong hybridization of central system and surrounding reservoirs. In an adiabatic expansion up to first order beyond the quasistatic limit, it provides a clear understanding of the connection between heat and entropy currents generated by time-dependent potentials and shows their connection to the occurring dissipation. Combined with the work required to change the potential, the developed formalism provides a full thermodynamic description from an outside perspective, applicable to arbitrary non-interacting electron systems.

cond-mat.mes-hall↗

arXiv2016

Weiss oscillations in graphene with a modulated height profile

We study the electronic transport properties of a monolayer graphene with a one-dimensional modulated height profile caused, for instance, by substrate ondulations. We show that the combined effect of the resulting strain fields induce modulated scalar and vector potentials that give rise to Weiss oscillations in the magnetoconductivity. We also find that similar effects can be obtained by applying a parallel magnetic field to the graphene-substrate interface. The parameters of an experimental set-up for a physical realization of these findings in graphene systems are discussed.

cond-mat.mes-hall↗

arXiv2016

A 50/50 electronic beam splitter in graphene nanoribbons as a building block for electron optics

Based on the investigation of the multi-terminal conductance of a system composed of two graphene nanoribbons, in which one is on top of the other and rotated by 60 degrees, we propose a setup for a 50/50 electronic beam splitter that neither requires large magnetic fields nor ultra low temperatures. Our findings are based on an atomistic tight-binding description of the system and on the Green's function method to compute the Landauer conductance. We demonstrate that this system acts as a perfect 50/50 electronic beam splitter, in which its operation can be switched on and off by varying the doping (Fermi energy). We show that this device is robust against thermal fluctuations and long range disorder, as zigzag valley chiral states of the nanoribbons are protected against backscattering. We suggest that the proposed device can be applied as the fundamental element of the Hong-Ou-Mandel interferometer, as well as a building block of many devices in electron optics.

cond-mat.mes-hall↗

arXiv2016

Impurity invisibility in graphene: Symmetry guidelines for the design of efficient sensors

Renowned for its sensitivity to detect the presence of numerous substances, graphene is an excellent chemical sensor. Unfortunately, which general features a dopant must have in order to enter the list of substances detectable by graphene are not exactly known. Here we demonstrate with a simple model calculation implemented in three different ways that one of such features is the symmetry properties of the impurity binding to graphene. In particular, we show that electronic scattering is suppressed when dopants are bound symmetrically to both graphene sub-lattices, giving rise to impurity invisibility. In contrast, dopants that affect the two sublattices asymmetrically are more strongly scattered and therefore the most likely candidates to being chemically sensed by graphene. Furthermore, we demonstrate that impurity invisibility is lifted with the introduction of a symmetry-breaking perturbation such as uniaxial strain. In this case, graphene with sublattice-symmetric dopants will function as efficient strain sensors. We argue that by classifying dopants through their bonding symmetry leads to a more efficient way of identifying suitable components for graphene-based sensors.

cond-mat.mes-hall↗

arXiv2015

Gauge fields in graphene with nonuniform elastic deformations: A quantum field theory approach

We investigate the low energy continuum limit theory for electrons in a graphene sheet under strain. We use the quantum field theory in curved spaces to analyze the effect of the system deformations into an effective gauge field. We study both in-plane and out-of-plane deformations and obtain a closed expression for the effective gauge field due to arbitrary nonuniform sheet deformations. The obtained results reveal a remarkable relation between the local-pseudo magnetic field and the Riemann curvature, so far overlooked.

cond-mat.mes-hall↗

arXiv2015

Random gauge field effects on the conductivity of graphene sheets with disordered ripples

We study the effect of disordered ripples on the conductivity of monolayer graphene flakes. We calculate the relaxation times and the Boltzmann conductivities associated with two mechanisms. First, we study the conductivity correction due to an external in-plane magnetic field $B_\parallel$. Due to the irregular local curvature found at graphene sheets deposited over a substrate, $B_\parallel$ can be mapped into an effective random magnetic field perpendicular to the graphene surface. Second, we study the electron momentum relaxation due to intrinsic pseudo magnetic fields originated from deformations and strain. We find that the competition between these mechanisms gives rise to a strong anisotropy in the conductivity tensor. This result provides a new strategy to quantitatively infer the strength of pseudo-magnetic fields in rippled graphene flakes.

cond-mat.mes-hall↗

arXiv2011

Semiclassical magnetotransport in graphene n-p junctions

We provide a semiclassical description of the electronic transport through graphene n-p junctions in the quantum Hall regime. This framework is known to experimentally exhibit conductance plateaus whose origin is still not fully understood. In the magnetic regime (E < vF B), we show the conductance of excited states is essentially zero, while that of the ground state depends on the boundary conditions considered at the edge of the sample. In the electric regime (E > vF B), for a step-like electrostatic potential (abrupt on the scale of the magnetic length), we derive a semiclassical approximation for the conductance in terms of the various snake-like trajectories at the interface of the junction. For a symmetric configuration, the general result can be recovered using a simple scattering approach, providing a transparent analysis of the problem under study. We thoroughly discuss the semiclassical predicted behavior for the conductance and conclude that any approach using fully phase-coherent electrons will hardly account for the experimentally observed plateaus.

cond-mat.mes-hall↗

arXiv2010

Graphene n-p junction in a strong magnetic field: a semiclassical study

We provide a semiclassical description of the electronic transport through graphene n-p junctions in the quantum Hall regime. A semiclassical approximation for the conductance is derived in terms of the various snake-like trajectories at the interface of the junction. For a symmetric (ambipolar) configuration, the general result can be recovered by means of a simple scattering approach, providing a very transparent qualitative description of the problem under study. Consequences of our findings for the understanding of recent experiments are discussed.

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