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Caixia Bu

Publications and source records attributed to Caixia Bu.

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Theoretical Ion Sputtering Yields from Loose Powders using a Multiscale Monte Carlo Approach

Ion sputtering from loose powders remains poorly understood despite its relevance to planetary science and industry. We developed a multiscale Monte Carlo model to simulate sputtering from powders, using a higher-fidelity approach for the target geometry compared to voxel-based methods. Simulating Kr+ ions impacting Cu powders and flat slabs, we show that sputtering from loose powders differs markedly from that of flat slabs or rough surfaces. The main differences are: (1) for incident angles a > 0 degree relative to the bulk normal, the escaping sputtering yield is dominated by backward-directed ejecta for all ion energies; (2) for a < 60 degrees, the yield peaks toward the ion-beam origin, similar to the opposition effect seen in optical observations of airless bodies; (3) the angular distribution peak is half or less than that of a flat slab; (4) as ion energy increases, no evolution occurs from primary to secondary knock-on sputtering in the ejecta angular distribution. We attribute these behaviors to the powders interconnected voids. Ions penetrate these voids and sputter underlying grains; the ejecta then preferentially escape toward the ion-beam origin, where shadowing is minimal. We derive two fitting functions: 1) relating the escaping sputtering yield of a powder to that of a flat surface, depending only on porosity, incident angle, mean local incidence angle, and the corresponding flat slab yield; 2) providing the double-differential angular distribution of the escaping ejecta for porosities > 0.49. These provide a potentially universal fitting function of the absolute doubly-differential escaping sputtering yield from loose powders.

physics.app-ph

Absolute Doubly Differential Angular Sputtering Yields for 20 keV Kr+ on Polycrystalline Cu

We have measured the absolute doubly differential angular sputtering yield for 20 keV Kr+ impacting a polycrystalline Cu slab at an incidence angle of θi = 45° relative to the surface normal. Sputtered Cu atoms were captured using collectors mounted on a half dome above the sample, and the sputtering distribution was measured as a function of the sputtering polar, θs, and azimuthal, phi, angles. Absolute results of the sputtering yield were determined from the mass gain of each collector, the ion dose, and the solid angle subtended, after irradiation to a total fluence of ~ 1 x 10^18 ions/cm^2. Our approach overcomes shortcomings of commonly used methods that only provide relative yields as a function of θs in the incidence plane (defined by the ion velocity and the surface normal). Our experimental results display an azimuthal variation that increases with increasing θs and is clearly discrepant with simulations using binary collision theory. We attribute the observed azimuthal anisotropy to ion-induced formation of micro- and nano-scale surface features that suppress the sputtering yield through shadowing and redeposition effects, neither of which are accounted for in the simulations. Our experimental results demonstrate the importance of doubly differential angular sputtering studies to probe ion sputtering processes at a fundamental level and to explore the effect of ion-beam-generated surface roughness.

physics.app-ph