SearcharxivSearch

arXiv subjects

Caiyu Wang

Publications and source records attributed to Caiyu Wang.

3 recordsLinked to original sources

Mixed Distillation Helps Smaller Language Model Better Reasoning

While large language models (LLMs) have demonstrated exceptional performance in recent natural language processing (NLP) tasks, their deployment poses substantial challenges due to high computational and memory demands in real-world applications. Recent studies have focused on enhancing smaller models through knowledge distillation from LLMs, yielding promising results. However, these models often struggle to match the performance of LLMs, especially in tasks that require reasoning. In this work, we introduce Mixed Distillation (MD) framework, which capitalizes on the strengths of Program of Thought (PoT) and Chain of Thought (CoT) capabilities within LLMs, combining multiple prompting techniques and distilling these capabilities into smaller models. Our experimental results show that MD significantly enhances the single-path and multi-path reasoning ability of smaller models in various tasks. In terms of accuracy and generality of reasoning tasks, the model generated by it exceeds the comprehensive performance of two individually distilled models. Notably, LLaMA2-7B and CodeLlama-7B using MD achieved remarkable improvements of (84.5%) and (85.5%), respectively, outperforming GPT-3.5-Turbo by (2.5%) and (3.5%), on the SVAMP benchmark.

cs.CL

Metal$/BaTiO_{3}/β-Ga_{2}O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type doping is not available, achieving this high breakdown field in a vertical diode or transistor is very challenging. We propose and demonstrate the use of dielectric heterojunctions that use extreme permittivity materials to achieve high breakdown field in a unipolar device. We demonstrate the integration of a high permittivity material BaTiO3 with n-type $β$-Ga2O3 to enable 5.7 MV/cm average electric field and 7 MV/cm peak electric field at the device edge, while maintaining forward conduction with relatively low on-resistance and voltage loss. The proposed dielectric heterojunction could enable new design strategies to achieve theoretical device performance limits in wide and ultra-wide band gap semiconductors where bipolar doping is challenging.

cond-mat.mtrl-sci

Lateral Heterojunction BaTiO3/AlGaN Diodes with >8MV/cm Breakdown Field

In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extreme dielectric constant material, has been used, in this study, as dielectric material under the anode to significantly reduce the peak electric field at the anode edge of the heterojunction diode such that the observed average breakdown field was higher than 8 MV/cm, achieved for devices with anode to cathode spacing less than 0.2 microns. Control Schottky anode devices (Pt/Al0.58Ga0.42N) fabricated on the same sample displayed an average breakdown field around 4 MV/cm for devices with similar dimensions. While both breakdown fields are significantly higher than those exhibited by incumbent technologies such as GaN-based devices, BaTiO3 can enable more effective utilization of the higher breakdown fields available in ultra-wide bandgap materials by proper electric field management. This demonstration thus lays the groundwork needed to realize ultra-scaled lateral devices with significantly improved breakdown characteristics.

physics.app-ph