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Caizhen Li

Publications and source records attributed to Caizhen Li.

2 recordsLinked to original sources

Topological surface states in {\gamma}-PtBi$_2$ evidenced by scanning tunneling microscopy

For the application of topological materials, the specific location of their topological surface states with respect to the Fermi level are important. {\gamma}-PtBi2 has been demonstrated to be a Weyl semimetal possessing superconducting Fermi arcs by photoemission spectroscopy. However, the evidence of its topological surface states is lacking by scanning tunneling microscopy (STM), which should be rather sensitive to detect the surface states. Here, we show multiple STM evidences for the existence of topological surface states in {\gamma}-PtBi2. We observe not only the step-edge and screw dislocation induced quasiparticle interference fringes, originating from the electron scatterings between the Fermi arcs of {\gamma}-PtBi2, but also the back-scattering prohibition related to the spin-flip process, which is the direct evidence for the topological nature of the surface states. Moreover, we demonstrate that the topological surface states are precisely located over a narrow energy range near the Fermi level, within which sharply enhanced intensity and slow spatial decay of quasiparticle interference are observed.

cond-mat.supr-con

Ultrafast Relaxation Dynamics of Photoexcited Dirac Fermion in The Three Dimensional Dirac Semimetal Cadmium Arsenide

Three dimensional (3D) Dirac semimetals which can be seen as 3D analogues of graphene have attracted enormous interests in research recently. In order to apply these ultrahigh-mobility materials in future electronic/optoelectronic devices, it is crucial to understand the relaxation dynamics of photoexcited carriers and their coupling with lattice. In this work, we report ultrafast transient reflection measurements of the photoexcited carrier dynamics in cadmium arsenide (Cd3As2), which is one of the most stable Dirac semimetals that have been confirmed experimentally. By using low energy probe photon of 0.3 eV, we probed the dynamics of the photoexcited carriers that are Dirac-Fermi-like approaching the Dirac point. We systematically studied the transient reflection on bulk and nanoplate samples that have different doping intensities by tuning the probe wavelength, pump power and lattice temperature, and find that the dynamical evolution of carrier distributions can be retrieved qualitatively by using a two-temperature model. This result is very similar to that of graphene, but the carrier cooling through the optical phonon couplings is slower and lasts over larger electron temperature range because the optical phonon energies in Cd3As2 are much lower than those in graphene.

cond-mat.mes-hall