arXiv subjects

Callan Jessiman

Publications and source records attributed to Callan Jessiman.

3 recordsLinked to original sources

arXiv2026

Impact of Cold Noise on the tracking performance of ATLAS ITk short strip barrel modules using a charged particle beam

The inner tracking system of the ATLAS experiment will be upgraded to a full silicon detector in 2030 for HL-LHC. The new tracking system is called ITk, the Inner Tracker. It is required to be operable with efficiency higher than 99\% and noise hit occupancy smaller than 0.1\%. During the pre-production phase of the ITk project, many short-strip modules were observed to exhibit so-called "Cold Noise (CN)", wherein clusters of strips displayed very high noise when the modules were operated at temperatures below~$-35\degree$C. To investigate the CN impact and ensure the quality of module production, huge amount of effort have been put in by the collaboration. This paper focuses on the impact of CN on the tracking performance by examining two short strip modules that exhibit CN: one is non-irradiated, while the other one has been irradiated to the maximum expected end-of-lifetime fluence. For each module, the global and single strip tracking performance are evaluated.

physics.ins-det↗

arXiv2025

Test beam measurements and computer simulations of the ATLAS ITk R2 silicon strip detector

The ATLAS Inner Tracker, the future innermost part of the ATLAS detector, is an all-silicon tracker composed of pixel and strip modules, designed to cope with the extreme conditions expected during High-Luminosity LHC runs. Thorough testing of modules during the individual phases of their development is critical to ensure the required performance level of the whole tracker. This document presents results obtained from electron beam measurements of the ATLAS ITk R2 end-cap strip module. Key performance metrics are presented and discussed for both perpendicular and angled beam incidence. Computer simulations of the module were performed in the Allpix-Squared framework and the results were compared to experimental data.

physics.ins-det↗

arXiv2024

TCAD Simulations of Humidity-Induced Breakdown of Silicon Sensors

The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field with relative humidity and the carrier densities towards breakdown in the periphery of p-bulk silicon sensors are investigated.

physics.ins-det↗