arXiv subjects

Calliope Bazioti

Publications and source records attributed to Calliope Bazioti.

5 recordsLinked to original sources

arXiv2026

Optical library of Ga2O3 polymorphs

Gallium oxide is an emerging material of interest due to its unique combination of functional properties and the existence of multiple polymorphs - α, β, γ, δ, and κ - each exhibiting distinct characteristics arising from their different lattice symmetries. Optical properties are particularly important, as they determine potential device applications and enable phase identification. However, direct comparison of optical signatures, including key parameters such as bandgaps, is hindered by inconsistent, sparse, or even missing data in the literature. To address this issue, in the present work we systematically cross-correlate optical emission and absorption features of α, β, γ, δ, and κ thin films, as well as differently oriented β-phase bulk crystals and γ/β double polymorph structures. We demonstrate that optical bandgaps and emission features scale consistently across the polymorphs when methodological uncertainties are minimized by applying identical experimental conditions and unified analysis procedures to a structurally similar set of thin film samples. In addition, we extend conventional far field optical phase identification to the nanoscale by reporting near field optical signatures of Ga2O3 polymorphs via nano FTIR. Overall, the present dataset provides a comprehensive reference of near- and far-field optical polymorph signatures to support ongoing multidisciplinary research on Ga2O3.

cond-mat.mtrl-sci↗

arXiv2025

Microtubes and nanomembranes by ion-beam-induced exfoliation of $β$-Ga$_{2}$O$_{3}$

This paper reports an innovative process to fabricate $β$-Ga$_{2}$O$_{3}$ microtubes and nanomembranes based on ion implantation in (100)-oriented single-crystals. We show that, under specific flux and fluence conditions, the irradiation-induced strain profile promotes the detachment and rolling-up of a thin surface layer, forming a microtube. The strain-disorder interplay was investigated in detail for Cr-implanted $β$-Ga$_{2}$O$_{3}$ with a range of complementary methods, showing an excellent agreement between experimental and simulation data, and suggesting an exfoliation mechanism that is correlated with the anisotropic nature of the $β$-Ga$_{2}$O$_{3}$ monoclinic system and its easy-cleavage planes. Moreover, these microtubes can be unrolled upon a subsequent annealing step, resulting in nanomembranes with bulk-like crystalline quality that can be transferred to other substrates. The recovery of the implantation-induced damage under thermal annealing has also been studied, showing a remarkable recovery at moderate temperatures (~500 °C). This observation underscores the potential of this method for the scalable production of nanomembranes with improved reproducibility compared to conventional mechanical exfoliation techniques. Importantly, such exfoliation can be done employing different ions, providing simultaneous $β$-Ga$_{2}$O$_{3}$ doping, chosen to control the structural, optical, magnetic and electrical properties of the nanomembranes, thus tailoring them to fit the desired applications.

cond-mat.mtrl-sci↗

arXiv2024

Band Offsets at β/γ-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ Interface

Ultrawide bandgap semiconductor gallium oxide (Ga2O3) and its polymorphs have recently attracted increasing attention across physics, materials science, and electronics communities. In particular, the self-organized formation of the beta/gamma-Ga2O3 double polymorph structures was demonstrated recently [A. Azarov et al., Nat. Commun. 14, 4855 (2023)], paving the way for prospective applications of such structures in electronics. Consequently, determining the conduction band offset in such structures is crucial since it dictates the behavior of conduction electrons at the interface and, consequently, the potential functionality of such interfaces. Thus, in this work, we calculate the band offsets at the beta/gamma-Ga2O3 interface using density functional theory in correlation with the data provided by the experimental atomistic interface analysis. Specifically, to unravel the strain state of the beta/gamma-Ga2O3 interface, nanoscale strain maps were recorded using high-resolution transmission electron microscopy. In its turn, theoretically, lineup potential and vacuum alignment methods were used to analyze the band offsets, with and without strain, at the beta/gamma-Ga2O3 interface. Altogether, the collected results suggest that the band offsets between the beta and gamma phases are likely not exceeding a few hundred meV, remaining highly sensitive to the strain state at the interface. At this end, we conclude that even though the formation of a two-dimensional electron gas (2DEG) at the beta/gamma interface is theoretically possible, the gradual strain relaxation--if it occurs as a function of the distance from the interface--poses a significant challenge, as it may shift the 2DEG localization or even reduce the overall probability of its formation.

cond-mat.mtrl-sci↗

arXiv2022

Disorder-induced ordering in gallium oxide polymorphs

Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure/strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the radiation disorder accumulation typically results in the amorphization instead of engaging polymorphism. By studying these phenomena in gallium oxide we found that the amorphization may be prominently suppressed by the monoclinic to orthorhombic phase transition. Utilizing this discovery, a highly oriented single-phase orthorhombic film on the top of the monoclinic gallium oxide substrate was fabricated. Exploring this system, a novel mode of a lateral polymorphic regrowth, not previously observed in solids, was detected. In combination, these data envisage a new direction of research on polymorphs in Ga2O3 and, potentially, for similar polymorphic families in other materials.

cond-mat.mtrl-sci↗

arXiv2019

Investigation of the electrostatic potential of a grain boundary in Y-substituted BaZrO3 using inline electron holography

We apply inline electron holography to investigate the electrostatic potential across an individual BaZr0.9Y0.1O3 grain boundary. With holography, we measure a grain boundary potential of -1.3 V. Electron energy loss spectroscopy analyses indicate that barium vacancies at the grain boundary are the main contributors to the potential well in this sample. Furthermore, geometric phase analysis and density functional theory calculations suggest that reduced atomic density at the grain boundary also contributes to the experimentally measured potential well.

cond-mat.mtrl-sci↗