arXiv subjects

Carl-Friedrich Schön

Publications and source records attributed to Carl-Friedrich Schön.

6 recordsLinked to original sources

arXiv2026

Bonding Signatures of Incipient Electron Localization in Topological Chiral Semimetals Near the Metal-Insulator Transition

How do electronic localization and delocalization compete in solids beyond the traditional limiting cases of metals and iono-covalent insulators? Topological chiral semimetals (TCSMs), characterized by their unique crystal symmetry, offer an intriguing platform to explore this question. Here, we systematically compare TCSMs with covalent compounds, ordinary metals, and metavalent solids (incipient metals), and show that TCSMs occupy a distinct region in a multidimensional property fingerprint. Atom probe tomography reveals an unusual bond-rupture signature, consistent with a bonding regime intermediate between electron localization and delocalization. This interpretation is supported by measurements of optical properties showing a transfer of spectral weight from interband to intraband transitions. For highly conductive TCSMs, this transition is accompanied by the disappearance of the Born effective charge, a measure of chemical bond polarizability, while less conductive TCSMs retain a nonzero value. Together, these results identify a property based bonding perspective on TCSMs that distinguishes them from metals, covalent solids, and metavalent compounds. Although metavalent solids and TCSMs both lie near the metal-insulator transition and exhibit distorted crystal structures, ultrafast coherent phonon spectroscopy reveals fundamentally different lattice-dynamical responses: a phonon-driven Peierls-like instability in metavalent solids versus a robust chiral B20 bonding motif in TCSMs.

cond-mat.mtrl-sci↗

arXiv2026

Classification of Metal - Insulator Transitions: Relating characteristic Properties to Quantum Chemical Bonding Descriptors

Pressure induced metal insulator transitions (MIT) are classified by the evolution of characteristic optoelectronic and vibrational properties calculated with density functional theory. Three classes emerge: ionic solids metallize continuously at band-gap closure with hardening phonons; covalent solids show discontinuous changes in atomic arrangement and optical phonon frequencies; a third class exhibits complete lattice softening and drastically enhanced electron phonon coupling. A one dimensional hydrogen chain reproduces this behavior and serves as a toy model of the underlying bonding mechanism, termed metavalent. Two quantum-chemical descriptors capture the distinct bonding changes behind the three classes. In metavalent solids, competing electron localization and delocalization yield soft optical modes and Peierls distortions on the insulating side, superconductivity on the metallic side, and low lattice thermal conductivity near the MIT.

cond-mat.mtrl-sci↗

arXiv2026

Divergent Coherent Phonon Responses Across the Metal-Insulator Crossover

Ultrafast laser control of material properties hinges on understanding light-matter interactions. We use two experimentally accessible response functions, laser fluence induced phonon softening and the amplitude of coherent reflectance oscillations, to compare how strongly different materials respond to ultrafast photoexcitation. Comparing a diverse set of materials, we find that only a narrow class, including Sb, GeTe, and Bi2Te3, shows exceptional responses such as pronounced phonon softening and a giant increase of reflectance oscillations with increasing fluence. These response functions peak in an intermediate conductivity regime of about 102 - 104 S/cm, at the crossover between localized and delocalized electronic states. The corresponding class of solids also shows other unconventional properties including high dielectric constants, enhanced Born effective charges, coordination numbers exceeding the 8-N rule and uncommon bond rupture. This suggests that these materials employ a unique bonding mechanism, coined metavalent bonding. Frozen-phonon DFT calculations show that the strong fluence dependence arises from Peierls-like instabilities, leading to large deformation potentials and anharmonic double-well potentials. These findings identify metavalent bonding as a design principle for enhanced coherent phonon control and provide a quantitative framework for identifying materials with exceptional ultrafast responses.

cond-mat.mtrl-sci↗

arXiv2024

Atom probe tomography: a local probe for chemical bonds in solids

Atom probe tomography is frequently employed to characterize the elemental distribution in solids with atomic resolution. Here we review and discuss the potential of this technique to locally probe chemical bonds. Two processes characterize the bond rupture in laser-assisted field emission, the probability of molecular ions, i.e. the probability that molecular ions (PMI) are evaporated instead of single (atomic) ions, and the probability of multiple events, i.e. the correlated field-evaporation of more than a single fragment (PME) upon laser- or voltage pulse excitation. Here we demonstrate that one can clearly distinguish solids with metallic, covalent, and metavalent bonds based on their bond rupture, i.e. their PME and PMI values. Differences in the field penetration depth can largely explain these differences in bond breaking. These findings open new avenues in understanding and designing advanced materials, since they allow a quantification of bonds in solids on a nanometer scale, as will be shown for several examples. These possibilities would even justify calling the present approach bonding probe tomography (BPT).

cond-mat.mtrl-sci↗

arXiv2020

Discovering electron transfer driven changes in chemical bonding in lead chalcogenides (PbX, where X = Te, Se, S, O)

Understanding the nature of chemical bonding in solids is crucial to comprehend the physical and chemical properties of a given compound. To explore changes in chemical bonding in lead chalcogenides (PbX, where X = Te, Se, S, O), a combination of property-, bond breaking- and quantum-mechanical bonding descriptors have been applied. The outcome of our explorations reveals an electron transfer driven transition from metavalent bonding in PbX (X = Te, Se, S) to iono-covalent bonding in beta-PbO. Metavalent bonding is characterized by adjacent atoms being held together by sharing about a single electron and small electron transfer (ET). The transition from metavalent to iono-covalent bonding manifests itself in clear changes in these quantum-mechanical descriptors (ES and ET), as well as in property-based descriptors (i.e. Born effective charge, dielectric function, effective coordination number (ECON) and mode-specific Grueneisen parameter, and in bond breaking descriptors (PME). Metavalent bonding collapses, if significant charge localization occurs at the ion cores (ET) and/or in the interatomic region (ES). Predominantly changing the degree of electron transfer opens possibilities to tailor materials properties such as the chemical bond and electronic polarizability, optical band gap and optical interband transitions characterized by the imaginary part of the dielectric function. Hence, the insights gained from this study highlight the technological relevance of the concept of metavalent bonding and its potential for materials design.

cond-mat.mtrl-sci↗

arXiv2018

Disorder control in crystalline GeSb2Te4 and its impact on characteristic length scales

Crystalline GeSb2Te4 (GST) is remarkable material, as it allows to continuously tune the electrical resistance by orders of magnitude without involving a phase transition or stoichiometric changes, just by altering the short-range order. While well-ordered specimen are metallic, increasing amounts of disorder can eventually lead to an insulating state with vanishing conductivity in the 0K limit, but a similar number of charge carriers. These observations make disordered GST one of the most promising candidates for the realization of a true Anderson insulator. While so far the low-temperature properties have mostly been studied in films of small grain size, here a sputter-deposition process is employed that enables preparation of a large variety of these GST states including metallic and truly insulating ones. By growing films of GST on mica substrates, biaxially textured samples with huge grain sizes are obtained. A series of these samples is employed for transport measurements, as their electron mean free path can be altered by a factor of 20. Yet, the mean free path always remains more than an order of magnitude smaller than the lateral grain size. This proves unequivocally that grain boundaries play a negligible role for electron scattering, while intragrain scattering, presumably by disordered vacancies, dominates. Most importantly, these findings underline that the Anderson insulating state as well as the system's evolution towards metallic conductivity are indeed intrinsic properties of the material.

cond-mat.mtrl-sci↗