arXiv subjects

Carlo Zucchetti

Publications and source records attributed to Carlo Zucchetti.

5 recordsLinked to original sources

arXiv2026

Charge-to-spin conversion in epitaxial and polycrystalline Bi and Bi/Ag layers

Bi is predicted to be an efficient generator of spin-orbit torques (SOTs), with charge-to-spin conversion efficiency comparable to those of prototypical heavy metals, such as Ta, W, and Pt. However, experimental reports provide widely scattered interconversion efficiencies, while the origin of the large conversion signal in Bi/Ag bilayers remains controversial. Here, we investigate charge-to-spin conversion in epitaxial and polycrystalline Bi-based magnetic heterostructures by measuring the damping-like SOT using magneto-optic Kerr effect magnetometry, complemented by structural and spectroscopic analyses and harmonic Hall resistance measurements. We show that inserting an Ag spacer between Bi(001) and metallic ferromagnets (FeCo or Ni) enhances the SOT efficiency by more than one order of magnitude, reaching an effective spin Hall conductivity of approximately $2 \times 10^5 (\hbar/2e)$ S/m, in excellent agreement with theoretical expectations for bulk Bi. This enhancement can be consistently explained by the preservation of the structural and chemical integrity of Bi, otherwise compromised by the direct deposition of a ferromagnetic overlayer, rather than by Rashba spin-orbit coupling at the Bi/Ag interface. Comparative studies across epitaxial, polycrystalline, and intentionally surface-oxidized Bi films, beyond oxygen doses known to destroy Bi(001) surface states, reveal that structural disorder has a negative impact on the SOT efficiency and indicate a dominant bulk contribution to spin-current generation in Bi/Ag heterostructures, yielding an effective Bi spin Hall angle of approximately 1. By establishing a direct correlation between atomic-scale integrity and charge-to-spin conversion, this study provides design principles to improve the reliability of Bi-based SOT devices and offers a robust framework for interpreting spin-charge interconversion in Bi and Bi/Ag systems.

cond-mat.mtrl-sci↗

arXiv2025

Optically induced orbital polarization in bulk germanium

Optical orientation has been proven as a powerful tool to inject spin-polarized electron and hole populations in III-V and group-IV semiconductors. In particular, the absorption of circularly-polarized light in bulk Ge generates a spin-oriented population of electrons in the conduction band with a spin-polarization up to 50%, whereas the hole spin-polarization, opposite to the electron one, can even reach values up to 83%. In this letter, we theoretically investigate the optical injection of orbital polarization by means of circularly-polarized light in bulk Ge and we show that the latter considerably exceeds 100% for holes and photon energies close to the direct Ge gap. These results suggest that Ge is a convenient platform for future development of orbitronics and opto-orbitronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Electric Field Modulation of Spin Transport

The finite spin lifetime in solids is often considered a major hindrance for the development of spintronic devices, which typically require cryogenic temperatures to mitigate this phenomenon. In this work we show that this feature can instead be exploited to realize a scheme where spin transport is modulated at room temperature by a modest electric field. A field directed antiparallel (parallel) to the spin-diffusion velocity can in fact largely increase (decrease) the spin-transport length compared with the zero field case. We find that applying an electric field E = 24 V/cm along a 40 mm-long path in germanium results in about one order of magnitude modulation of the spin-polarized electrons entering in the detector. The present work demonstrates that electric fields can be exploited for guiding spins over macroscopic distances and for realizing fast, room temperature modulation of spin accumulation.

cond-mat.mtrl-sci↗

arXiv2018

Enhancement of Spin Currents in a Lattice near the Curie Point

We show that pure spin currents carried by conduction electrons injected into a paramagnetic lattice of mutually interacting localized magnetic moments can be enhanced close to the Curie temperature by the exchange interaction between the lattice sites and the non vanishing spin density associated with the spin current. The latter partially aligns the magnetic moments of the lattice, generating a flow of paramagnons that contribute to the total spin current.

cond-mat.mes-hall↗

arXiv2016

Non-local opto-electrical spin injection and detection in germanium at room temperature

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a "source" and a well separated "drain". The next generation electronics may operate on the spin of carriers instead of their charge and germanium appears as the best hosting material to develop such a platform for its compatibility with mainstream silicon technology and the long electron spin lifetime at room temperature. Moreover, the energy proximity between the direct and indirect bandgaps allows for optical spin injection and detection within the telecommunication window. In this letter, we demonstrate injection of pure spin currents (\textit{i.e.} with no associated transport of electric charges) in germanium, combined with non-local spin detection blocks at room temperature. Spin injection is performed either electrically through a magnetic tunnel junction (MTJ) or optically, exploiting the ability of lithographed nanostructures to manipulate the distribution of circularly-polarized light in the semiconductor. Pure spin current detection is achieved using either a MTJ or the inverse spin-Hall effect (ISHE) across a platinum stripe. These results broaden the palette of tools available for the realization of opto-spintronic devices.

cond-mat.mtrl-sci↗