arXiv subjects

Carmela Aruta

Publications and source records attributed to Carmela Aruta.

7 recordsLinked to original sources

arXiv2026

Interfacial properties of MoS2 thin films grown on functional substrates

Interface chemistry and defect formation in MoS2 thin films grown on single crystal substrates critically determine the electronic structure of MoS2 and thus can strongly modify material functionality relevant for many applications, including electronics, optoelectronics, and energy related catalysis. We investigate MoS2 grown on three technologically relevant substrates, namely SrTiO3(111), c-axis Al2O3(0001) and 6H-SiC(0001). Experimental investigations by temperature dependent resistivity, photoemission spectroscopy and scanning transmission electron microscopy with coupled energy dispersive spectroscopy, with the support of theoretical calculation by Density Functional Theory, allow the identification of the substrate induced specific defects and their correlation with the electronic properties. Ti interdiffusion in SrTiO3/MoS2 generates donor like states near the Fermi level, leading to metallic transport. Al2O3/MoS2 exhibits a high density of sulfur related defects that introduce localized states and yield nearly temperature independent conductivity. SiC/MoS2 exhibits significant interface disorder resulting in a semiconducting temperature dependent resistivity, yet deviating from the ideal bulk like behavior. These results demonstrate how substrate choice governs defect formation and ultimately dominates the electronic behavior of MoS2 thin films, making the control of film substrate interactions essential for the engineering of new functional devices.

cond-mat.mtrl-sci↗

arXiv2026

Substrate induced optimization of the Electrocatalytic Hydrogen Evolution Reaction (HER) performances of MoS2 thin film

Molybdenum disulfide (MoS2) has emerged as a promising, cost-effective catalyst for hydrogen production via water splitting. We investigate the structural and electrocatalytic properties of MoS2 thin films deposited on different substrates (Al2O3, SiC, STO) to study their hydrogen evolution reaction (HER) activity. In particular, in order to study the substrate influence on the stabilization of different polymorphic MoS2 phases, the films are synthesised using pulsed laser deposition on substrates with different crystal symmetries and lattice parameters. All the deposited samples are characterized by X-Ray Diffraction, Raman Spectroscopy, Linear Sweep Voltammetry and Electrochemical Impedance Spectroscopy analyses. The films grown on Al2O3 substrates exhibit the best HER performance, likely due to the stabilization of the metastable 1T phase through the interfacial interactions between film and substrate. Presence of the 1T phase in the samples grown on Al2O3 improves the charge transfer efficiency and the electrochemically active surface with a better response to the applied potential, demonstrating their enhanced catalytic behaviour for hydrogen evolution.

cond-mat.mtrl-sci↗

arXiv2014

Persistent photoconductivity in 2-dimensional electron gases at different oxide interfaces

We report on the transport characterization in dark and under light irradiation of three different interfaces: LaAlO3/SrTiO3, LaGaO3/SrTiO3, and the novel NdGaO3/SrTiO3 heterostructure. All of them share a perovskite structure, an insulating nature of the single building blocks, a polar/non- polar character and a critical thickness of four unit cells for the onset of conductivity. The interface structure and charge confinement in NdGaO3/SrTiO3 are probed by atomic-scale- resolved electron energy loss spectroscopy showing that, similarly to LaAlO3/SrTiO3, extra electronic charge confined in a sheet of about 1.5 nm in thickness is present at the NdGaO3/SrTiO3 interface. Electric transport measurements performed in dark and under radiation show remarkable similarities and provide evidence that the persistent perturbation induced by light is an intrinsic peculiar property of the three investigated oxide-based polar/non-polar interfaces. Our work sets a framework for understanding the previous contrasting results found in literature about photoconductivity in LaAlO3/SrTiO3 and highlights the connection between the origin of persistent photoconductivity and the origin of conductivity itself. An improved understanding of the photo- induced metastable electron-hole pairs might allow to shed a direct light on the complex physics of this system and on the recently proposed perspectives of oxide interfaces for solar energy conversion.

cond-mat.str-el↗

arXiv2013

Interface reconstruction in superconducting CaCuO2/SrTiO3 superlattices: A hard x-ray photoelectron spectroscopy study

Here we report about the interface reconstruction in the recently discovered superconducting artificial superlattices based on insulating CaCuO2 and SrTiO3 blocks. Hard x-ray photoelectron spectroscopy shows that the valence bands alignment prevents any electronic reconstruction by direct charge transfer between the two blocks. We demonstrate that the electrostatic built-in potential is suppressed by oxygen redistribution in the alkaline earth interface planes. By using highly oxidizing growth conditions, the oxygen coordination in the reconstructed interfaces may be increased, resulting in the hole doping of the cuprate block and thus in the appearance of superconductivity.

cond-mat.str-el↗

arXiv2012

Reversible and Persistent Photoconductivity at the NdGaO3/SrTiO3 Conducting Interface

The interface between the band gap insulators LaAlO3 and SrTiO3 is known to host a highly mobile two-dimensional electron gas. Here we report on the fabrication and characterization of the NdGaO3/SrTiO3 interface, that shares with LaAlO3/SrTiO3 an all-perovskite structure, the insulating nature of the single building block and the polar-non polar character. Our work demonstrates that in NdGaO3/SrTiO3 a metallic layer of mobile electrons is formed, with properties comparable to LaAlO3/SrTiO3. The localization of the injected electrons at the Ti sites, within a few unit cells from the interface, was proved by Atomic-scale-resolved EELS analyses. The electric transport and photoconduction of samples were also investigated. We found that irradiation by photons below the SrTiO3 gap does not increase the carrier density, but slightly enhances low temperature mobility. A giant persistent photoconductivity effect was instead observed, even under irradiation by low energy photons, in highly resistive samples fabricated at non-optimal conditions. We discuss the results in the light of different mechanisms proposed for the two-dimensional electron gas formation. Both the ordinary and the persistent photoconductivity in these systems are addressed and analyzed.

cond-mat.mtrl-sci↗

arXiv2012

Critical influence of target-to-substrate distance on conductive properties of LaGaO3/SrTiO3 interfaces deposited at 10-1 mbar oxygen pressure

We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the interface properties. These results demonstrate the growth of conducting interfaces at an oxygen pressure of 10-1 mbar, an experimental condition where a well-oxygenated heterostructures with a reduced content of oxygen defects is expected.

cond-mat.mtrl-sci↗

arXiv2008

Improved structural ordering in sexithiophene thick films grown on single crystal oxide substrates

We report on sexithiophene films, about 150nm thick, grown by thermal evaporation on single crystal oxides and, as comparison, on Si/SiO2. By heating the entire deposition chamber at 100 C we obtain standing-up oriented molecules all over the bulk thickness. Surface morphology shows step-like islands, each step being only one monolayer height. The constant and uniform warming of the molecules obtained by heating the entire deposition chamber allows a stable diffusion-limited growth process. Therefore, the regular growth kinetic is preserved when increasing the thickness of the film. Electrical measurements on differently structured films evidence the impact of the inter island separation region size on the main charge transport parameters.

cond-mat.mtrl-sci↗