arXiv subjects

Carmen Munuera

Publications and source records attributed to Carmen Munuera.

At least 19 recordsLinked to original sources

arXiv2026

Mechanical Detuning of Exciton-Phonon Resonance in WS2

Controlling resonant Raman scattering in two-dimensional semiconductors typically requires tuning the excitation energy to match excitonic transitions. Here we show that mechanical deformation can achieve the same effect without changing the laser energy, enabling a controlled transition between resonant and non-resonant Raman scattering at fixed excitation. By applying biaxial strain up to 1.3% to WS2, the B exciton is red-shifted by 180 meV. This large excitonic shift leads to a pronounced collapse of the double-resonant 2LA(M) mode under 532 nm excitation, quantitatively described by a resonance model formulated in terms of the B exciton energy. Meanwhile, first-order phonons remain narrow and reversible, confirming elastic deformation and efficient strain transfer. These results establish mechanical strain as an effective knob to control exciton-phonon mediated light-matter interactions. They enable deterministic and reversible tuning of resonance-enhanced Raman scattering and excitonic optical responses in layered semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

Wafer-Scale Films of Two-Dimensional Materials via Roll-to-Roll Mechanical Exfoliation

In this study, we demonstrate an improved version of the roll-to-roll mechanical exfoliation method, incorporating a controlled sliding motion into the exfoliation process to achieve uniform nanosheet films of two-dimensional materials at wafer-scale. This scalable technique enables the fabrication of high-quality films suitable for electronic and optoelectronic applications. We validate the process by fabricating WSe2 phototransistors directly on the exfoliated films, achieving performance metrics comparable to the best reported devices based on electrochemically exfoliated material. The all-dry transfer method employed ensures minimal contamination and preserves the intrinsic properties of the material. This work highlights the potential of high-throughput mechanical exfoliation as a cost-effective and reliable route for large-scale production of 2D material-based devices.

cond-mat.mtrl-sci↗

arXiv2025

Enhanced Strain Transfer and Optoelectronic Performance in MoS2 Devices via Formvar Encapsulation

We systematically investigate the influence of polyvinyl formal (PVFM), commonly known as Formvar, in comparison to polycarbonate (PC) and polymethyl methacrylate (PMMA), as encapsulation materials on the strain performance of MoS2 monolayer and bilayer flakes on flexible polypropylene (PP) substrates. Notably, optical differential reflectance measurements reveal that PVFM and PMMA encapsulation significantly enhances the mechanical and thermal strain gauge factors by approximately 2-fold (up to ~-50 meV/%) and 6-fold (up to ~-1.5 meV/°C), respectively, while PC shows a slightly lower enhancement. Moreover, all three polymers increase the maximum achievable strain from approximately 1.4% to 2.3%. Furthermore, devices fabricated on PP substrates exhibit improved optoelectronic performance when encapsulated with PVFM, including increased and faster photocurrent response and extended device lifetime.

cond-mat.mtrl-sci↗

arXiv2025

Natural layered phlogopite dielectric for ultrathin two-dimensional optoelectronics

The integration of high-dielectric-constant (high-$κ$) materials with two-dimensional (2D) semiconductors is promising to overcome performance limitations and reach their full theoretical potential. Here we show that naturally occurring phlogopite mica, exfoliated into ultrathin flakes, can serve as a robust high-$κ$ dielectric layer for transition metal dichalcogenide-based 2D electronics and optoelectronics. Phlogopite's wide bandgap (~4.8 eV), high dielectric constant (~11), and large breakdown field (10 MVcm$^{-1}$) enable transistors with subthreshold swings down to 100 mVdec$^{-1}$, minimal hysteresis (30-60 mV) and interface trap densities comparable to state-of-the-art oxide dielectrics. Moreover, phototransistors built upon monolayer molybdenum disulfide (MoS$_2$) and phlogopite exhibit responsivities up to 3.3x10$^{4}$ AW$^{-1}$ and detectivities near 10$^{10}$ Jones, surpassing devices based on conventional gate insulators. We further demonstrate the versatility of this natural dielectric by integrating phlogopite/MoS$_2$ heterostructures into NMOS inverters, showcasing robust voltage gains and low-voltage operation. Our findings establish phlogopite as a promising, earth-abundant dielectric for next-generation 2D transistor technologies and high-performance photodetection.

cond-mat.mtrl-sci↗

arXiv2024

Approaching the Intrinsic Properties of Moiré Structures Using Atomic Force Microscopy Ironing

Stacking monolayers of transition metal dichalcogenides (TMDs) has led to the discovery of a plethora of new exotic phenomena, resulting from moiré pattern formation. Due to the atomic thickness and high surface-to-volume ratio of heterostructures, the interfaces play a crucial role. Fluctuations in the interlayer distance affect interlayer coupling and moiré effects. Therefore, to access the intrinsic properties of the TMD stack, it is essential to obtain a clean and uniform interface between the layers. Here, we show that this is achieved by ironing with the tip of an atomic force microscope. This post-stacking procedure dramatically improves the homogeneity of the interfaces, which is reflected in the optical response of the interlayer exciton. We demonstrate that ironing improves the layer coupling, enhancing moiré effects and reducing disorder. This is crucial for the investigation of TMD heterostructure physics, which currently suffers from low reproducibility.

cond-mat.mes-hall↗

arXiv2024

Strong electrostatic control of excitonic features in MoS$_2$ by a free-standing ultrahigh-$κ$ ferroelectric perovskite

We present the electrostatic control of photoluminescence of monolayer MoS$_2$ at room temperature via integration of free-standing BaTiO$_3$ (BTO), a ferroelectric perovskite oxide, layers. We show that the use of BTO leads to highly tunable exciton emission of MoS$_2$ in a minimal range of gate voltages, effectively controlling the neutral excitons to charged excitons (trions) conversion. Due to BTO's ferroelectric polarization-induced doping we observe large peak emission shifts as well as a large and tunable A trion binding energy in the range of 40-100 meV. To further investigate the efficacy of electrostatic control, we compared our measurements with those carried out when the BTO is replaced by a hexagonal boron nitride (hBN) dielectric layer of comparable thickness, confirming BTO's superior gating properties and thus lower power consumption. Additionally, we take advantage of the ferroelectric switching of BTO by fabricating devices where the BTO layer is decoupled from the gate electrode with a SiO$_2$ layer. Choosing to isolate the BTO allows us to induce large remanent behavior of MoS$_2$'s excitonic features, observing hysteretic behavior in the peak energy ratio between A exciton and its trion, as well as hysteretic behavior in the doping-related trion energy shift. This study illustrates the rich physics involved in combining free-standing complex oxide layers with two-dimensional materials.

cond-mat.mtrl-sci↗

arXiv2023

Band structure, superconductivity and polytypism in AuSn$_4$

The orthorhombic compound AuSn4 is compositionally similar to the Dirac node arc semimetal PtSn$_4$. AuSn$_4$ is, contrary to PtSn$_4$, superconducting with a critical temperature of T$_c$ = 2.35 K. Recent measurements present indications for quasi two-dimensional superconducting behavior in AuSn$_4$. Here we present measurements of the superconducting density of states and the band structure of AuSn$_4$ through Scanning Tunneling Microscopy (STM) and Angular Resolved Photoemission Spectroscopy (ARPES). The superconducting gap values in different portions of the Fermi surface are spread around Δ0 = 0.4 meV, which is close to but somewhat larger than $Δ=$ 1.76kBT$_c$ expected from BCS theory. We observe superconducting features in the tunneling conductance at the surface up to temperatures about 20% larger than bulk Tc. The band structure calculated with Density Functional Theory (DFT) follows well the results of ARPES. The crystal structure presents two possible stackings of Sn layers, giving two nearly degenerate polytypes. This makes AuSn$_4$ a rather unique case with a three dimensional electronic band structure but properties ressembling those of low dimensional layered compounds.

cond-mat.supr-con↗

arXiv2023

A 2D ferroelectric vortex lattice in twisted BaTiO3 freestanding layers

The wealth of complex polar topologies recently found in nanoscale ferroelectrics result from a delicate balance between the materials intrinsic tendency to develop a homogeneous polarization and the electric and mechanic boundary conditions imposed upon them. Ferroelectric dielectric interfaces are model systems where polarization curling originates from open circuit like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux closure domains that evolve into vortex like structures at the nanoscale. Interestingly, while ferroelectricity is known to couple strongly to strain (both homogeneous and inhomogeneous), the effect of mechanical constraints on thin film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles opens an unprecedented opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated to the twisting. Interestingly, we find that a peculiar pattern of polarization vortices and antivortices emerges from the flexoelectric coupling of polarization to strain gradients. This finding opens exciting opportunities to create two-dimensional high density vortex crystals that would allow us to explore novel physical effects and functionalities.

cond-mat.mes-hall↗

arXiv2022

Magnetic domain wall pinning in cobalt ferrite microstructures

A detailed correlative structural, magnetic and chemical analysis of non-stoichiometric cobalt ferrite micrometric crystals was performed by x-ray magnetic circular dichroism combined with photoemission microscopy, low energy electron microscopy, and atomic force microscopy. The vector magnetization at the nanoscale is obtained from magnetic images at different x-ray incidence angles and compared with micromagnetic simulations, revealing the presence of defects which pin the magnetic domain walls. A comparison of different types of defects and the domain walls location suggests that the main source of pinning in these microcrystals are linear structural defects induced in the spinel by the substrate steps underneath the islands.

cond-mat.mtrl-sci↗

arXiv2021

Integrating van der Waals materials on paper substrates for electrical and optical applications

Paper holds the promise to replace silicon substrates in applications like internet of things or disposable electronics that require ultra-low-cost electronic components and an environmentally friendly electronic waste management. In the last years, spurred by the abovementioned properties of paper as a substrate and the exceptional electronic, mechanical and optical properties of van der Waals (vdW) materials, many research groups have worked towards the integration of vdW materials-based devices on paper. Recently, a method to deposit a continuous film of densely packed interconnects of vdW materials on paper by simply rubbing the vdW crystals against the rough surface of paper has been presented. This method utilizes the weak interlayer vdW interactions and allows cleaving of the crystals into micro platelets through the abrasion against the paper. Here, we aim to illustrate the general character and the potential of this technique by fabricating films of 39 different vdW materials (including superconductors, semi-metals, semiconductors, and insulators) on standard copier paper. We have thoroughly characterized their optical properties showing their high optical quality: one can easily resolve the absorption band edge of semiconducting vdW materials and even the excitonic features present in some vdW materials with high exciton binding energy. We also measured the electrical resistivity for several vdW materials films on paper finding exceptionally low values, which are in some cases, orders of magnitude lower than those reported for analogous films produced by inkjet printing. We finally demonstrate the fabrication of field-effect devices with vdW materials on paper using the paper substrate as an ionic gate.

cond-mat.mtrl-sci↗

arXiv2021

In-plane anisotropic optical and mechanical properties of two-dimensional MoO$_3$

Molybdenum trioxide (MoO$_3$) in-plane anisotropy has increasingly attracted the attention of the scientific community in the last few years. Many of the observed in-plane anisotropic properties stem from the anisotropic refractive index and elastic constants of the material but a comprehensive analysis of these fundamental properties is still lacking. Here we employ Raman and micro-reflectance measurements, using polarized light, to determine the angular dependence of the refractive index of thin MoO$_3$ flakes and we study the directional dependence of the MoO$_3$ Young's modulus using the buckling metrology method. We found that MoO$_3$ displays one of the largest in-plane anisotropic mechanical properties reported for 2D materials so far.

cond-mat.mtrl-sci↗

arXiv2020

Optical-based thickness measurement of MoO$_3$ nanosheets

Considering that two-dimensional (2D) molybdenum trioxide has acquired more attention in the last few years, it is relevant to speed up thickness identification of this material. We provide two fast and non-destructive methods to evaluate the thickness of MoO$_3$ flakes on SiO$_2$/Si substrates. First, by means of quantitative analysis of the apparent color of the flakes in optical microscopy images, one can make a first approximation of the thickness with an uncertainty of $\pm3$ nm. The second method is based on the fit of optical contrast spectra, acquired with micro-reflectance measurements, to a Fresnel law-based model that provides an accurate measurement of the flake thickness with $\pm2$ nm of uncertainty.

cond-mat.mtrl-sci↗

arXiv2020

Observation of a gel of quantum vortices in a superconductor at very low magnetic fields

A gel consists of a network of particles or molecules formed for example using the sol-gel process, by which a solution transforms into a porous solid. Particles or molecules in a gel are mainly organized on a scaffold that makes up a porous system. Quantized vortices in type II superconductors mostly form spatially homogeneous ordered or amorphous solids. Here we present high-resolution imaging of the vortex lattice displaying dense vortex clusters separated by sparse or entirely vortex-free regions in $β$-Bi$_2$Pd superconductor. We find that the intervortex distance diverges upon decreasing the magnetic field and that vortex lattice images follow a multifractal behavior. These properties, characteristic of gels, establish the presence of a novel vortex distribution, distinctly different from the well-studied disordered and glassy phases observed in high-temperature and conventional superconductors. The observed behavior is caused by a scaffold of one-dimensional structural defects with enhanced stress close to the defects. The vortex gel might often occur in type-II superconductors at low magnetic fields. Such vortex distributions should allow to considerably simplify control over vortex positions and manipulation of quantum vortex states.

cond-mat.supr-con↗

arXiv2019

Tailored Graphenic Structures Directly Grown on Titanium Oxide Boost the Interfacial Charge Transfer

The successful application of titanium oxide-graphene hybrids in the fields of photocatalysis, photovoltaics and photodetection strongly depends on the interfacial contact between both materials. The need to provide a good coupling between the enabling conductor and the photoactive phase prompted us to directly grow conducting graphenic structures on TiO2 crystals. We here report on the direct synthesis of tailored graphenic structures by using Plasma Assisted Chemical Vapour Deposition that present a clean junction with the prototypical titanium oxide (110) surface. Chemical analysis of the interface indicates chemical bonding between both materials. Photocurrent measurements under UV light illumination manifest that the charge transfer across the interface is efficient. Moreover, the influence of the synthesis atmosphere, gas precursor (C2H2) and diluents (Ar, O2), on the interface and on the structure of the as-grown graphenic material is assessed. The inclusion of O2 promotes vertical growth of partially oxidized carbon nanodots/rods with controllable height and density. The deposition with Ar results in continuous graphenic films with low resistivity (6.8x10-6 ohm x m). The synthesis protocols developed here are suitable to produce tailored carbon-semiconductor structures on a variety of practical substrates as thin films, pillars or nanoparticles.

physics.app-ph↗

arXiv2019

Attractive interaction between superconducting vortices in tilted magnetic fields

Many practical applications of high T$_c$ superconductors involve layered materials and magnetic fields applied on an arbitrary direction with respect to the layers. When the anisotropy is very large, Cooper pair currents can circulate either within or perpendicular to the layers. Thus, tilted magnetic fields lead to intertwined lattices of Josephson and Abrikosov vortices, with quantized circulation across and within layers, respectively. Transport in such intertwined lattices has been studied in detail, but direct observation and manipulation of vortices remains challenging. Here we present magnetic force microscopy experiments in tilted magnetic fields in the extremely quasi-two dimensional superconductor $Bi_{2}Sr_{2}CaCu_{2}O_{8}$. We trigger Abrikosov vortex motion in between Josephson vortices, and find that Josephson vortices in different layers can be brought on top of each other. Our measurements suggest that intertwined lattices in tilted magnetic fields can be intrinsically easy to manipulate thanks to the mutual interaction between Abrikosov and Josephson vortices.

cond-mat.supr-con↗

arXiv2018

Towards Air Stability of Ultra-Thin GaSe Devices: Avoiding Environmental and Laser-Induced Degradation by Encapsulation

Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical non-linearity. Nonetheless, few-layer GaSe is not stable under ambient conditions and it tends to degrade over time. Here we combine atomic force microscopy, Raman spectroscopy and optoelectronic measurements in photodetectors based on thin GaSe to study its long-term stability. We found that the GaSe flakes exposed to air tend to decompose forming firstly amorphous selenium and Ga2Se3 and subsequently Ga2O3. While the first stage is accompanied by an increase in photocurrent, in the second stage we observe a decrease in photocurrent which leads to the final failure of GaSe photodetectors. Additionally, we found that the encapsulation of the GaSe photodetectors with hexagonal boron nitride (h-BN) can protect the GaSe from degradation and can help to achieve long-term stability of the devices.

cond-mat.mtrl-sci↗

arXiv2018

Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite

We study mechanically exfoliated nanosheets of franckeite by quantitative optical microscopy. The analysis of transmission mode and epi-illumination mode optical microscopy images provides a rapid method to estimate the thickness of the exfoliated flakes at first glance. A quantitative analysis of the optical contrast spectra by means of micro-reflectance allows one to determine the refractive index of franckeite in a broad range of the visible spectrum through a fit of the acquired spectra to a Fresnel law based model.

cond-mat.mtrl-sci↗

arXiv2017

Direct visualization of phase separation between superconducting and nematic domains in Co-doped CaFe2As2 close to a first order phase transition

We show that biaxial strain induces alternating tetragonal superconducting and orthorhombic nematic domains in Co substituted CaFe2As2. We use Atomic Force, Magnetic Force and Scanning Tunneling Microscopy (AFM, MFM and STM) to identify the domains and characterize their properties, finding in particular that tetragonal superconducting domains are very elongated, more than several tens of micron long and about 30 nm wide, have the same Tc than unstrained samples and hold vortices in a magnetic field. Thus, biaxial strain produces a phase separated state, where each phase is equivalent to what is found at either side of the first order phase transition between antiferromagnetic orthorhombic and superconducting tetragonal phases found in unstrained samples when changing Co concentration. Having such alternating superconducting domains separated by normal conducting domains with sizes of order of the coherence length opens opportunities to build Josephson junction networks or vortex pinning arrays and suggests that first order quantum phase transitions lead to nanometric size phase separation under the influence of strain.

cond-mat.supr-con↗