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Ce Liang

Publications and source records attributed to Ce Liang.

6 recordsLinked to original sources

Diffusion Bootstrap for High-Dimensional Linear Models

Classical bootstrap methods can behave poorly in high-dimensional linear models: the pairs bootstrap often yields overly conservative inference, whereas the residual bootstrap can be anti-conservative, reflecting systematic failures in variance calibration. We propose a diffusion-based pairs bootstrap that replaces the empirical joint distribution with a learned generative law. We establish variance consistency under a score approximation assumption, using complementary SDE and PDE arguments. Counterexamples show that terminal $W_4$ convergence alone is insufficient for variance consistency. Experiments indicate that diffusion pairs bootstrap improves variance calibration and generally improves Type~I error calibration, including in settings not covered by our theory.

stat.ME

Mind the Gap -- Imaging Buried Interfaces in Twisted Oxide Moir\'es

The ability to tune electronic structure in twisted stacks of two-dimensional (2D) materials has motivated the exploration of similar moir\'e physics with twisted oxide membranes. Due to the intrinsic three-dimensional nature of bonding in many oxides, achieving atomic-level coupling is significantly more challenging than with van der Waals materials. Although clean interfaces with atomic-level proximity have been demonstrated in ceramic bicrystals using high-temperature and high-pressure processing to facilitate atomic diffusion that flattens rough interfaces, such conditions are not readily accessible when bonding oxide membranes. This study shows how topographic mismatch due to surface roughness of the membranes can restrict atomic-scale proximity at the interface to isolated patches even after contaminants and amorphous interlayers are eliminated. In interfaces between 2D materials and oxide membranes the reduced ability of the 2D material to conform to the membrane's step-terrace topography also limits atomic-scale contact. When imaging stacked membranes in projection, we find conventional through-focal imaging to be relatively insensitive to the buried interface, whereas electron ptychography detects structural variations on the order of a nanometer. These findings highlight interface roughness as a key challenge for the field of oxide twistronics and emphasize the need for reliable characterization methods, both in cross-section and projection.

cond-mat.mtrl-sci

Spectra-orthogonal optical anisotropy in wafer-scale molecular crystal monolayers

Controlling the spectral and polarization responses of two-dimensional (2D) crystals is vital for developing ultra-thin platforms for compact optoelectronic devices. However, independently tuning optical anisotropy and spectral response remains challenging in conventional semiconductors due to the intertwined nature of their lattice and electronic structures. Here, we report spectra-orthogonal optical anisotropy, where polarization anisotropy is tuned independently of spectral response, in wafer-scale, one-atom-thick 2D molecular crystal (2DMC) monolayers synthesized on monolayer transition metal dichalcogenide (TMD) crystals. Utilizing the concomitant spectral consistency and structural tunability of perylene derivatives, we demonstrate tunable optical polarization anisotropy in 2DMCs with similar spectral profiles, as confirmed by room-temperature scanning tunneling microscopy and cross-polarized reflectance microscopy. Additional angle-dependent analysis of the single- and polycrystalline molecular domains reveals an epitaxial relationship between the 2DMC and the TMD. Our results establish a scalable, molecule-based 2D crystalline platform for unique and tunable functionalities unattainable in covalent 2D solids.

cond-mat.mes-hall

Quantifying and Enhancing Multi-modal Robustness with Modality Preference

Multi-modal models have shown a promising capability to effectively integrate information from various sources, yet meanwhile, they are found vulnerable to pervasive perturbations, such as uni-modal attacks and missing conditions. To counter these perturbations, robust multi-modal representations are highly expected, which are positioned well away from the discriminative multi-modal decision boundary. In this paper, different from conventional empirical studies, we focus on a commonly used joint multi-modal framework and theoretically discover that larger uni-modal representation margins and more reliable integration for modalities are essential components for achieving higher robustness. This discovery can further explain the limitation of multi-modal robustness and the phenomenon that multi-modal models are often vulnerable to attacks on the specific modality. Moreover, our analysis reveals how the widespread issue, that the model has different preferences for modalities, limits the multi-modal robustness by influencing the essential components and could lead to attacks on the specific modality highly effective. Inspired by our theoretical finding, we introduce a training procedure called Certifiable Robust Multi-modal Training (CRMT), which can alleviate this influence from modality preference and explicitly regulate essential components to significantly improve robustness in a certifiable manner. Our method demonstrates substantial improvements in performance and robustness compared with existing methods. Furthermore, our training procedure can be easily extended to enhance other robust training strategies, highlighting its credibility and flexibility.

cs.CV

Universal wrinkling of freestanding atomically thin films

Atomically thin films, like transition metal dichalcogenides, can now be synthesized at wafer scale, achieving the same extreme aspect ratio (~10^8) that a sheet of paper would have if it covered an entire city. Yet, the intrinsic (i.e. unconfined) three-dimensional shape of these extreme membranes remains a mystery because of the very fundamentals of mechanical measurements: to measure such an ultra-thin film, one first needs to simultaneously free it and stabilize it without introducing confining boundaries. Here, we introduce a counter-intuitive solution to this problem: place atomically thin films on water. Using atomic force microscopy (AFM) and Raman spectroscopy adapted to water's surface, we reveal that large-scale freestanding membranes spontaneously self-wrinkle into a universal mechanical state with long emergent length scales that follow robust scaling trends. Our analytical and numerical models suggest that these universal trends are controlled by mesoscopic parameters of the polycrystalline domains instead of atomistic details. Moreover, we demonstrate experimentally that the wrinkles result in a large and tunable reduction of elastic stiffness by up to 2 orders of magnitude. The present work illuminates the physical properties of the world's thinnest materials at length scales never probed before and highlights their potential for tunable strain-controlled nanomechanical devices.

cond-mat.mes-hall

The Role of Self-Torques in Transition Metal Dichalcogenide/Ferromagnet Bilayers

Recently, transition metal dichalcogenides (TMDs) have been extensively studied for their efficient spin-orbit torque generation in TMD/ferromagnetic bilayers, owing to their large spin-orbit coupling, variety in crystal symmetries, and pristine interfaces. Although the TMD layer was considered essential for the generation of the observed SOTs, recent reports show the presence of a self-torque in single-layer ferromagnetic devices with magnitudes comparable to TMD/ferromagnetic devices. Here, we perform second-harmonic Hall SOT measurements on metal-organic chemical vapor deposition (MOCVD) grown MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices and compare them to a single-layer permalloy/Al$_{2}$O$_{3}$ device to accurately disentangle the role of self-torques from contributions from the TMD layer. We report a damping-like self-torque conductivity of opposite sign in our single-layer permalloy/Al$_{2}$O$_{3}$ device compared to one MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ device, and find no significant one for all other MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices. This indicates a competition between the self-torque and the torque arising from the TMD layer, which would reduce the observed torque in these bilayers. In addition, we find a field-like spin-torque conductivity of comparable magnitude to control MoS$_{2}$/permalloy/Al$_{2}$O$_{3}$ devices, indicating only a minor role of the MoS$_{2}$ layer. Finally, we find a linear dependence of the SOT conductivity on the Hall bar leg/channel width ratio of our devices, indicating that the Hall bar dimensions are of significant importance for the reported SOT strength. Our results accentuate the importance of delicate details, like device asymmetry, Hall bar dimensions, and self-torque generation, for the correct disentanglement of the microscopic origins underlying the SOTs, essential for future energy-efficient spintronic applications.

cond-mat.mes-hall