arXiv subjects

Cephise Cacho

Publications and source records attributed to Cephise Cacho.

At least 73 records · Page 4Linked to original sources

arXiv2018

Observation of Chiral Fermions with a Large Topological Charge and and Associated Fermi-Arc Surface States in CoSi

Topological semimetals materialize a new state of quantum matter where massless fermions protected by a specific crystal symmetry host exotic quantum phenomena. Distinct from well-known Dirac and Weyl fermions, structurally-chiral topological semimetals are predicted to host new types of massless fermions characterized by a large topological charge, whereas such exotic fermions are yet to be experimentally established. Here, by using angle-resolved photoemission spectroscopy, we experimentally demonstrate that a transition-metal silicide CoSi hosts two types of chiral topological fermions, spin-1 chiral fermion and double Weyl fermion, in the center and corner of the bulk Brillouin zone, respectively. Intriguingly, we found that the bulk Fermi surfaces are purely composed of the energy bands related to these fermions. We also find the surface states connecting the Fermi surfaces associated with these fermions, suggesting the existence of the predicted Fermi-arc surface states. Our result provides the first experimental evidence for the chiral topological fermions beyond Dirac and Weyl fermions in condensed-matter systems, and paves the pathway toward realizing exotic electronic properties associated with unconventional chiral fermions.

cond-mat.mes-hall↗

arXiv2018

Observation of band crossings protected by nonsymmorphic symmetry in the layered ternary telluride Ta3SiTe6

We have performed angle-resolved photoemission spectroscopy of layered ternary telluride Ta3SiTe6 which is predicted to host nodal lines associated with nonsymmorphic crystal symmetry. We found that the energy bands in the valence-band region show Dirac-like dispersions which present a band degeneracy at the R point of the bulk orthorhombic Brillouin zone. This band degeneracy extends one-dimensionally along the whole SR high-symmetry line, forming the nodal lines protected by the glide mirror symmetry of the crystal. We also observed a small band splitting near EF which supports the existence of hourglass-type dispersions predicted by the calculation. The present results provide an excellent opportunity to investigate the interplay between exotic nodal fermions and nonsymmorphic crystal symmetry.

cond-mat.mes-hall↗

arXiv2018

Mapping the Complete Reaction Path of a Complex Photochemical Reaction

We probe the dynamics of dissociating CS$_2$ molecules across the entire reaction pathway upon excitation. Photoelectron spectroscopy measurements using laboratory-generated femtosecond extreme ultraviolet pulses monitor the competing dissociation, internal conversion, and intersystem crossing dynamics. Dissociation occurs either in the initially excited singlet manifold or, via intersystem crossing, in the triplet manifold. Both product channels are monitored and show that, despite being more rapid, the singlet dissociation is the minor product and that triplet state products dominate the final yield. We explain this by a consideration of accurate potential energy curves for both the singlet and triplet states. We propose that rapid internal conversion stabilizes the singlet population dynamically, allowing for singlet-triplet relaxation via intersystem crossing and the efficient formation of spin-forbidden dissociation products on longer timescales. The study demonstrates the importance of measuring the full reaction pathway for defining accurate reaction mechanisms.

physics.chem-ph↗

arXiv2017

Ab-Initio Surface Hopping and Multiphoton Ionisation Study of the Photodissociation Dynamics of CS$_2$

New ab-initio surface hopping simulations of the excited state dynamics of CS$_2$ including spin-orbit coupling are compared to new experimental measurements using a multiphoton ionisation probe in a photoelectron spectroscopy experiment. The calculations highlight the importance of the triplet states even in the very early time dynamics of the dissociation process and allow us to unravel the signatures in the experimental spectrum, linking the observed changes to both electronic and nuclear degrees of freedom within the molecule.

physics.chem-ph↗

arXiv2017

Resonant multiphoton ionisation probe of the photodissociation dynamics of ammonia

The dissociation dynamics of the $\tilde{A}$-state of ammonia have been studied using a resonant multiphoton ionisation probe in a photoelectron spectroscopy experiment. The use of a resonant intermediate in the multiphoton ionisation process changes the ionisation propensity, allowing access to different ion states when compared with equivalent single photon ionisation experiments. Ionisation through the $E'$ $^1$A$_1'$ Rydberg intermediate means we maintain overlap with the ion state for an extended period allowing us to monitor the excited state population for several hundred femtoseconds. The vibrational states in the photoelectron spectrum show two distinct timescales, 200 fs and 320 fs, that we assign to the non-adiabatic and adiabatic dissociation processes respectively. The different timescales derive from differences in the wavepacket trajectories for the two dissociation pathways that resonantly excite different vibrational states in the intermediate Rydberg state. The timescales are similar to those obtained from time resolved ion kinetic energy release measurements, suggesting we can measure the different trajectories taken out to the region of conical intersection.

physics.chem-ph↗

arXiv2017

Dynamics of correlation-frozen antinodal quasiparticles in superconducting cuprates

Many puzzling properties of high-$T_c$ superconducting (HTSC) copper oxides have deep roots in the nature of the antinodal quasiparticles, the elementary excitations with wavevector parallel to the Cu-O bonds. These electronic states are most affected by the onset of antiferromagnetic correlations and charge instabilities and they host the maximum of the anisotropic superconducting gap and pseudogap. In this work, we use time-resolved extreme-ultra-violet (EUV) photoemission with proper photon energy (18 eV) and time-resolution (50 fs) to disclose the ultrafast dynamics of the antinodal states in a prototypical HTSC cuprate. After photoinducing a non-thermal charge redistribution within the Cu and O orbitals, we reveal a dramatic momentum-space differentiation of the transient electron dynamics. While the nodal quasi-particle distribution is heated up as in a conventional metal, new quasiparticle states transiently emerge at the antinodes, similarly to what is expected for a photoexcited Mott insulator, where the frozen charges can be released by an impulsive excitation. This transient antinodal metallicity is mapped into the dynamics of the O-2$p$ bands thus directly demonstrating the intertwining between the low- and high-energy scales that is typical of correlated materials. Our results suggest that the correlation-driven freezing of the electrons moving along the Cu-O bonds, analogous to the Mott localization mechanism, constitutes the starting point for any model of high-$T_c$ superconductivity and other exotic phases of HTSC cuprates.

cond-mat.str-el↗

arXiv2017

Generation and evolution of spin-, valley- and layer-polarized excited carriers in inversion-symmetric WSe2

Manipulation of spin and valley degrees of freedom is a key step towards realizing novel quantum technologies, for which atomically thin transition metal dichalcogenides (TMDCs) have been established as promising candidates. In monolayer TMDCs, the lack of inversion symmetry gives rise to a spin-valley correlation of the band structure allowing for valley-selective electronic excitation with circularly polarized light. Here we show that, even in centrosymmetric samples of 2H-WSe2, circularly polarized light can generate spin-, valley- and layer-polarized excited states in the conduction band. Employing time- and angle-resolved photoemission spectroscopy (trARPES) with spin-selective excitation, the dynamics of valley and layer pseudospins of the excited carriers are investigated. Complementary time-dependent density functional theory (TDDFT) calculations of the excited state populations reveal a strong circular dichroism of the spin-, valley- and layer-polarizations and a pronounced 2D character of the excited states in the K valleys. We observe scattering of carriers towards the global minimum of the conduction band on a sub-100 femtosecond timescale to states with three-dimensional character facilitating inter-layer charge transfer. Our results establish the optical control of coupled spin-, valley- and layer-polarized states in centrosymmetric materials and suggest the suitability of TMDC multilayer materials for valleytronic and spintronic device concepts.

cond-mat.mes-hall↗

arXiv2016

Spin and Valley Control of Free Carriers in Single-Layer WS$_2$

The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials. Here, we apply time- and angle-resolved photoemission spectroscopy to directly probe optically excited free carriers in the electronic band structure of a high quality single layer of WS$_2$. We observe that the optically generated free hole density in a single valley can be increased by a factor of 2 using a circularly polarized optical excitation. Moreover, we find that by varying the photon energy of the excitation we can tune the free carrier density in a given spin-split state around the valence band maximum of the material. The control of the photon energy and polarization of the excitation thus permits us to selectively excite free electron-hole pairs with a given spin and within a single valley.

cond-mat.mes-hall↗

arXiv2016

Ultrafast Band Structure Control of a Two-Dimensional Heterostructure

The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and inter-layer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS$_2$ on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS$_2$ layer. Following optical excitation, the band gap is reduced by up to $\sim\!$400 meV on femtosecond timescales due to a persistence of strong electronic interactions despite the environmental screening by the $n$-doped graphene. This points to a large degree of tuneability of both the electronic structure and electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure.

cond-mat.mtrl-sci↗

arXiv2016

Ultrafast Electron Dynamics in Epitaxial Graphene Investigated with Time- and Angle-Resolved Photoemission Spectroscopy

In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the $π$ band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.

cond-mat.str-el↗

arXiv2016

Tunable Carrier Multiplication and Cooling in Graphene

Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less ($p$-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.

cond-mat.mtrl-sci↗

arXiv2015

Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS$_2$

The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS$_2$. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons.

cond-mat.mtrl-sci↗

arXiv2015

Ramifications of Optical Pumping on the Interpretation of Time-Resolved Photoemission Experiments on Graphene

In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system. These processes can severely affect a correct interpretation of the data by masking the out-of-equilibrium electron dynamics intrinsic to the sample. In this study, we show that such effects indeed influence TR-ARPES data of graphene on a silicon carbide (SiC) substrate. In particular, we find a time- and laser fluence-dependent spectral shift and broadening of the acquired spectra, and unambiguously show the presence of a double pump excitation. The dynamics of these effects is slower than the electron dynamics in the graphene sample, thereby permitting us to deconvolve the signals in the time domain. Our results demonstrate that complex pump-related processes should always be considered in the experimental setup and data analysis.

cond-mat.str-el↗

arXiv2014

Phonon-pump XUV-photoemission-probe in graphene: evidence for non-adiabatic heating of Dirac carriers by lattice deformation

We modulate the atomic structure of bilayer graphene by driving its lattice at resonance with the in-plane E1u lattice vibration at 6.3um. Using time- and angle-resolved photoemission spectroscopy (tr-ARPES) with extreme ultra-violet (XUV) pulses, we measure the response of the Dirac electrons near the K-point. We observe that lattice modulation causes anomalous carrier dynamics, with the Dirac electrons reaching lower peak temperatures and relaxing at faster rate compared to when the excitation is applied away from the phonon resonance or in monolayer samples. Frozen phonon calculations predict dramatic band structure changes when the E1u vibration is driven, which we use to explain the anomalous dynamics observed in the experiment.

cond-mat.mes-hall↗

arXiv2014

Population Inversion in Monolayer and Bilayer Graphene

The recent demonstration of saturable absorption and negative optical conductivity in the Terahertz range in graphene has opened up new opportunities for optoelectronic applications based on this and other low dimensional materials. Recently, population inversion across the Dirac point has been observed directly by time- and angle-resolved photoemission spectroscopy (tr-ARPES), revealing a relaxation time of only ~ 130 femtoseconds. This severely limits the applicability of single layer graphene to, for example, Terahertz light amplification. Here we use tr-ARPES to demonstrate long-lived population inversion in bilayer graphene. The effect is attributed to the small band gap found in this compound. We propose a microscopic model for these observations and speculate that an enhancement of both the pump photon energy and the pump fluence may further increase this lifetime.

cond-mat.mtrl-sci↗

arXiv2014

Ultrafast Dynamics of Massive Dirac Fermions in Bilayer Graphene

Bilayer graphene is a highly promising material for electronic and optoelectronic applications since it is supporting massive Dirac fermions with a tuneable band gap. However, no consistent picture of the gap's effect on the optical and transport behavior has emerged so far, and it has been proposed that the insulating nature of the gap could be compromised by unavoidable structural defects, by topological in-gap states, or that the electronic structure could be altogether changed by many-body effects. Here we directly follow the excited carriers in bilayer graphene on a femtosecond time scale, using ultrafast time- and angle-resolved photoemission. We find a behavior consistent with a single-particle band gap. Compared to monolayer graphene, the existence of this band gap leads to an increased carrier lifetime in the minimum of the lowest conduction band. This is in sharp contrast to the second sub-state of the conduction band, in which the excited electrons decay through fast, phonon-assisted inter-band transitions.

cond-mat.mes-hall↗

arXiv2014

Probing the structure and dynamics of molecular clusters using rotational wavepackets

The chemical and physical properties of molecular clusters can heavily depend on their size, which makes them very attractive for the design of new materials with tailored properties. Deriving the structure and dynamics of clusters is therefore of major interest in science. Weakly bound clusters can be studied using conventional spectroscopic techniques, but the number of lines observed is often too small for a comprehensive structural analysis. Impulsive alignment generates rotational wavepackets, which provides simultaneous information on structure and dynamics, as has been demonstrated successfully for isolated molecules. Here, we apply this technique for the firsttime to clusters comprising of a molecule and a single helium atom. By forcing the population of high rotational levels in intense laser fields we demonstrate the generation of rich rotational line spectra for this system, establishing the highly delocalised structure and the coherence of rotational wavepacket propagation. Our findings enable studies of clusters of different sizes and complexity as well as incipient superfluidity effects using wavepacket methods.

physics.atm-clus↗

arXiv2013

Direct view on the ultrafast carrier dynamics in graphene

The ultrafast dynamics of excited carriers in graphene is closely linked to the Dirac spectrum and plays a central role for many electronic and optoelectronic applications. Harvesting energy from excited electron-hole pairs, for instance, is only possible if these pairs can be separated before they lose energy to vibrations, merely heating the lattice. While the hot carrier dynamics in graphene could so far only be accessed indirectly, we here present a direct time-resolved view on the Dirac cone by angle-resolved photoemission (ARPES). This allows us to show the quasi-instant thermalisation of the electron gas to a temperature of more than 2000 K; to determine the time-resolved carrier density; to disentangle the subsequent decay into excitations of optical phonons and acoustic phonons (directly and via supercollisions); and to show how the presence of the hot carrier distribution affects the lifetime of the states far below the Fermi energy.

cond-mat.mes-hall↗