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Ch. Renner

Publications and source records attributed to Ch. Renner.

At least 19 recordsLinked to original sources

Skyrmion-(Anti)Vortex Coupling in a Chiral Magnet-Superconductor Heterostructure

We report experimental coupling of chiral magnetism and superconductivity in [IrFeCoPt]/Nb heterostructures. The stray field of skyrmions with radius ~50nm is sufficient to nucleate antivortices in a 25nm Nb film, with unique signatures in the magnetization, critical current and flux dynamics, corroborated via simulations. We also detect a thermally-tunable Rashba-Edelstein exchange coupling in the isolated skyrmion phase. This realization of a strongly interacting skyrmion-(anti)vortex system opens a path towards controllable topological hybrid materials, unattainable to date.

cond-mat.supr-con

Electronic coupling between Bi nanolines and the Si(001) substrate: An experimental and theoretical study

Atomic nanolines are one dimensional systems realized by assembling many atoms on a substrate into long arrays. The electronic properties of the nanolines depend on those of the substrate. Here, we demonstrate that to fully understand the electronic properties of Bi nanolines on clean Si(001) several different contributions must be accounted for. Scanning tunneling microscopy reveals a variety of different patterns along the nanolines as the imaging bias is varied. We observe an electronic phase shift of the Bi dimers, associated with imaging atomic p-orbitals, and an electronic coupling between the Bi nanoline and neighbouring Si dimers, which influences the appearance of both. Understanding the interplay between the Bi nanolines and Si substrate could open a novel route to modifying the electronic properties of the nanolines.

cond-mat.mtrl-sci

Sub-atomic electronic feature from dynamic motion of Si dimer defects in bismuth nanolines on Si(001)

Scanning tunneling microscopy (STM) reveals unusual sharp features in otherwise defect free bismuth nanolines self-assembled on Si(001). They appear as subatomic thin lines perpendicular to the bismuth nanoline at positive biases and as atomic size beads at negative biases. Density functional theory (DFT) simulations show that these features can be attributed to buckled Si dimers substituting for Bi dimers in the nanoline, where the sharp feature is the counterintuitive signature of these dimers flipping during scanning. The perfect correspondence between the STM data and the DFT simulation demonstrated in this study highlights the detailed understanding we have of the complex Bi-Si(001) Haiku system.

cond-mat.mes-hall

Stripe and short range order in the charge density wave of 1T-Cu$_x$TiSe$_2$

We study the impact of Cu intercalation on the charge density wave (CDW) in 1T-Cu$_{\text{x}}$TiSe$_{\text{2}}$ by scanning tunneling microscopy and spectroscopy. Cu atoms, identified through density functional theory modeling, are found to intercalate randomly on the octahedral site in the van der Waals gap and to dope delocalized electrons near the Fermi level. While the CDW modulation period does not depend on Cu content, we observe the formation of charge stripe domains at low Cu content (x$<$0.02) and a breaking up of the commensurate order into 2$\times$2 domains at higher Cu content. The latter shrink with increasing Cu concentration and tend to be phase-shifted. These findings invalidate a proposed excitonic pairing as the primary CDW formation mechanism in this material.

cond-mat.mtrl-sci

Structure of self-assembled Mn atom chains on Si(001)

Mn has been found to self-assemble into atomic chains running perpendicular to the surface dimer reconstruction on Si(001). They differ from other atomic chains by a striking asymmetric appearance in filled state scanning tunneling microscopy (STM) images. This has prompted complicated structural models involving up to three Mn atoms per chain unit. Combining STM, atomic force microscopy and density functional theory we find that a simple necklace-like chain of single Mn atoms reproduces all their prominent features, including their asymmetry not captured by current models. The upshot is a remarkably simpler structure for modelling the electronic and magnetic properties of Mn atom chains on Si(001).

cond-mat.mes-hall

STM microscopy of the CDW in 1T-TiSe2 in the presence of single atom defects

We present a detailed low temperature scanning tunneling microscopy study of the commensurate charge density wave (CDW) in 1$T$-TiSe$_2$ in the presence of single atom defects. We find no significant modification of the CDW lattice in single crystals with native defects concentrations where some bulk probes already measure substantial reductions in the CDW phase transition signature. Systematic analysis of STM micrographs combined with density functional theory modelling of atomic defect patterns indicate that the observed CDW modulation lies in the Se surface layer. The defect patterns clearly show there are no 2$H$-polytype inclusions in the CDW phase, as previously found at room temperature [Titov A.N. et al, Phys. Sol. State 53, 1073 (2011). They further provide an alternative explanation for the chiral Friedel oscillations recently reported in this compound [J. Ishioka et al., Phys. Rev. B 84, 245125, (2011)].

cond-mat.mtrl-sci

Half-filled orbital and unconventional geometry of a common dopant in Si(001)

The determining factor of the bulk properties of doped Si is the column rather than the row in the periodic table from which the dopants are drawn. It is unknown whether the basic properties of dopants at surfaces and interfaces, steadily growing in importance as microelectronic devices shrink, are also solely governed by their column of origin. The common light impurity P replaces individual Si atoms and maintains the integrity of the dimer superstructure of the Si(001) surface, but loses its valence electrons to surface states. Here we report that isolated heavy dopants are entirely different: Bi atoms form pairs with Si vacancies, retain their electrons and have highly localized, half-filled orbitals.

cond-mat.mtrl-sci

Piezoresistance in silicon at uniaxial compressive stresses up to 3 GPa

The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance ($G$) of n-type silicon eventually saturates at $\approx 45%$ of its zero-stress value ($G_0$) in accordance with the charge transfer model, in p-type material $G/G_0$ increases above a predicted limit of $\approx 4.5$ without any significant saturation, even at 3 GPa. Calculation of $G/G_0$ using \textit{ab-initio} density functional theory reveals that neither $G$ nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained silicon technologies.

cond-mat.mtrl-sci

Endotaxial Si nanolines in Si(001):H

We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

cond-mat.mes-hall

One dimensional Si-in-Si(001) template for single-atom wire growth

Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We describe a novel silicon-only template enabling the self-organised growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one dimensional, defect-free reconstruction - the Haiku core, here revealed for the first time in details - self-assembled on hydrogenated Si(001) terraces, independent of any step edges. We discuss the potential of this Si-in-Si template as an appealing alternative to vicinal surfaces for nanoscale patterning.

cond-mat.mes-hall

Giant room temperature piezoresistance in a metal/silicon hybrid

Metal/semiconductor hybrids are artificially created structures presenting novel properties not exhibited by either of the component materials alone. Here we present a giant piezoresistance effect in a hybrid formed from silicon and aluminum. The maximum piezoresistive gage factor (GF) of 843, measured at room temperature, compares with a GF of -93 measured in the bulk homogeneous silicon. This piezoresistance boost is not due to the silicon/aluminum interface, but results from a stress induced anisotropy in the silicon conductivity that acts to switch current away from the highly conductive aluminum for uniaxial tensile strains. Its magnitude is shown, via the calculation of hybrid resistivity weighting functions, to depend only on the geometrical arrangement of the component parts of the hybrid.

cond-mat.mtrl-sci

Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study

A microscopic characterisation of the phase transitions associated with colossal magnetoresistance (CMR) in manganese perovskite oxides is a very important ingredient in the quest of understanding its underlying mechanism. Scanning tunneling microscopy (STM) is most suitable to investigate some of their reported hallmarks, including charge ordering, lattice distortions, and electronic phase separation. Here we investigate Bi1-XCaXMnO3 (BCMO) with x=0.76. At this composition, BCMO develops an insulating charge-ordered phase upon cooling, whose study as a function of temperature will allow identifying atomic scale characteristics of the metal-insulator phase transition (MIT). We observe distinct atomic scale phases at temperatures above and below the MIT, with very different electronic and structural characteristics. Combining STM micrographs and current-voltage tunneling characteristics, we find that charge ordering correlates both with the local conduction state (metallic or insulating) and the local structural order. Furthermore, STM shows coexistence of these phases as expected for a first order phase transition.

cond-mat.str-el

Polarons and confinement of electronic motion to two dimensions in a layered transition metal oxide

A very remarkable feature of the layered transition metal oxides (TMOs), whose most famous members are the high-temperature superconductors (HTSs), is that even though they are prepared as bulk three-dimensional single crystals, they display hugely anisotropic electrical and optical properties, seeming to be insulating perpendicular to the layers and metallic within them. This is the phenomenon of confinement, a concept at odds with the conventional theory of solids and recognized as due to magnetic and electron-lattice interactions in the layers which must be overcome at a substantial energy cost if electrons are to be transferred between layers. The associated energy gap or 'pseudogap' is particularly obvious in experiments where charge is moved perpendicular to the planes, most notably scanning tunneling microscopy (STM) and polarized infrared spectroscopy. Here, using the same experimental tools, we show that there is a second family of TMOs - the layered manganites La2-2xSr1+2xMn2O7 (LSMO) - with even more extreme confinement and pseudogap effects. The data, which are the first to resolve atoms in any metallic manganite, demonstrate quantitatively that because they are attached to polarons - lattice and spin textures within the planes -, it is equally difficult to remove carriers from the planes via vacuum tunneling into a conventional metallic tip, as it is for them to move between Mn-rich layers within the material itself.

cond-mat.str-el

Yakhot's model of strong turbulence: A generalization of scaling models of turbulence

We report on some implications of the theory of turbulence developed by V. Yakhot [V. Yakhot, Phys. Rev. E {\bf 57}(2) (1998)]. In particular we focus on the expression for the scaling exponents $\zeta_{n}$. We show that Yakhot's result contains three well known scaling models as special cases, namely K41, K62 and the theory by V. L'vov and I. Procaccia [V. L'vov & I. Procaccia, Phys. Rev. E {\bf 62}(6) (2000)]. The model furthermore yields a theoretical justification for the method of extended self--similarity (ESS).

cond-mat.soft

On the interaction between velocity increment and energy dissipation in the turbulent cascade

We adress the problem of interactions between the longitudinal velocity increment and the energy dissipation rate in fully developed turbulence. The coupling between these two quantities is experimentally investigated by the theory of stochastic Markovian processes. The so-called Markov analysis allows for a precise characterization of the joint statistical properties of velocity increment and energy dissipation. In particular, it is possible to determine the differential equation that governs the evolution along scales of the joint probability density of these two quantities. The properties of this equation provide interesting new insights into the coupling between energy dissipation and velocity incrementas leading to small scale intermittency.

physics.flu-dyn

Atomic-scale images of charge ordering in a mixed-valence manganite

Transition-metal perovskite oxides exhibit a wide range of extraordinary but imperfectly understood phenomena. Charge, spin, orbital, and lattice degrees of freedom all undergo order-disorder transitions in regimes not far from where the best-known of these phenomena, namely high-temperature superconductivity of the copper oxides, and the 'colossal' magnetoresistance of the manganese oxides, occur. Mostly diffraction techniques, sensitive either to the spin or the ionic core, have been used to measure the order. Unfortunately, because they are only weakly sensitive to valence electrons and yield superposition of signals from distinct mesoscopic phases, they cannot directly image mesoscopic phase coexistence and charge ordering, two key features of the manganites. Here we describe the first experiment to image charge ordering and phase separation in real space with atomic-scale resolution in a transition metal oxide. Our scanning tunneling microscopy (STM) data show that charge order is correlated with structural order, as well as with whether the material is locally metallic or insulating, thus giving an atomic-scale basis for descriptions of the manganites as mixtures of electronically and structurally distinct phases.

cond-mat.str-el

On the universality of small scale turbulence

The proposed universality of small scale turbulence is investigated for a set of measurements in a cryogenic free jet with a variation of the Reynolds number (Re) from 8500 to 10^6. The traditional analysis of the statistics of velocity increments by means of structure functions or probability density functions is replaced by a new method which is based on the theory of stochastic Markovian processes. It gives access to a more complete characterization by means of joint probabilities of finding velocity increments at several scales. Based on this more precise method our results call in question the concept of universality.

physics.flu-dyn