arXiv subjects

Chandan Kumar Vishwakarma

Publications and source records attributed to Chandan Kumar Vishwakarma.

8 recordsLinked to original sources

arXiv2026

Atomistic study of finite temperature properties in ferroelectric BiAlO$_3$

The lead-free perovskite ferroelectrics captivate researchers with their unique functional properties leading to important technological applications. In the search for a new lead-free perovskite of technological importance, we develop a first-principles based atomistic model to accurately predict the properties of BiAlO$_3$ in experimentally relevant conditions. Consistent with the experimental observations, our simulations predict a rhombohedral ferroelectric ($R3c$) ground state for BiAlO$_3$ facilitated by a structural phase transition from paraelectric (cubic, $Pm\Bar{3}m$) phase. The room-temperature spontaneous polarization and Curie temperature are obtained to be 81 $μ$C/cm$^2$ (along [111] direction) and 1160 K, respectively. Our simulations reveal strong coupling between ferroelectric and antiferrodistortive modes for a broad spectrum of temperature and electric field. We find that hydrostatic pressure suppresses both spontaneous polarization and Curie temperature, while both uniaxial and biaxial stresses induce multiple phase transitions in BiAlO$_3$.

cond-mat.mtrl-sci↗

arXiv2026

Charge dynamics at nitrogen impurities and nitrogen-vacancy centers in diamond

The nitrogen-vacancy (NV) center in diamond is the prototype quantum defect that enables a variety of diamond-based quantum technologies. However, charge-state instability and spectral diffusion, often induced by substitutional nitrogen impurities (N$_{\rm C}$), remain key challenges for device performance. Here, we employ first-principles density functional theory calculations to quantitatively investigate nonradiative carrier capture processes mediated by multiphonon emission at both the NV center and the N$_{\rm C}$ impurity. For relevant cases, we also compute the rates of radiative and thermal emission processes. For N$_{\rm C}^0$ $\to$ N$_{\rm C}^-$, we obtain an electron capture coefficient of $2.2 \times 10^{-8}$ cm$^3$s$^{-1}$ at 300 K. Both the magnitude and temperature dependence are in excellent agreement with experimentally measured capture cross sections. Electron capture at N$_{\rm C}^+$ is even faster, with a capture coefficient of $1.0 \times 10^{-4}$ cm$^3$s$^{-1}$ at 300 K. For the NV center, we find that carrier capture rates involving only the ground states of NV$^0$ and NV$^-$ are negligibly slow. However, capture into the excited states (NV$^{0*}$ and NV$^{-*}$) is significantly faster. In particular, the capture coefficient for the hole capture process NV$^-$ $\to$ NV$^{0*}$ is as large as $1.8 \times 10^{-7}$ cm$^3$s$^{-1}$ and largely temperature-independent. Hole capture at NV$^-$ will thus occur via nonradiative capture into an excited state of NV$^{0}$ followed by fast radiative decay to the NV$^0$ ground state. Similarly, electron capture at NV$^0$ will occur via the NV$^0$ $\to$ NV$^{-*}$ $\to$ NV$^-$ pathway, but with a lower nonradiative capture coefficient ($2.1 \times 10^{-9}$ cm$^3$s$^{-1}$ at 300 K). Our calculated capture coefficients and rates provide essential information for analyzing charge-state dynamics.

cond-mat.mtrl-sci↗

arXiv2026

Some new results on permutation trinomials over finite fields with even characteristic

The construction of permutation trinomials of the form $X^r(X^{α(2^m-1)}+X^{β(2^m-1)} + 1)$ over $\F_{2^{2m}}$, where $m,~r\text{ and }α> β$ are positive integers, is an active area of research. Several classes of permutation trinomials with fixed values of $α$, $β$ and $r$ have been studied. Here, we construct three new classes of permutation trinomials with $(α,β,r)\in\{(7,5,7),(8,6,9),(10,4,11)\}$ over $\F_{2^{2m}}$. We also analyze the quasi-multiplicative equivalence of the newly obtained classes of permutation trinomials to both the existing ones and to each other. Additionally, we prove the nonexistence of a class of permutation trinomials over $\F_{2^{2m}}$ of the same type for $r=9$, $α=7$, and $β=3$ when $m > 3$. Furthermore, we provide a proof for a conjecture on the quasi-multiplicative equivalence of two classes of permutation trinomials, as proposed by Yadav, Gupta, Singh, and Yadav (2024).

math.NT↗

arXiv2024

Emergence of half-metallic ferromagnetism and valley polarization in transition metal substituted WSTe monolayer

Two-dimensional (2D) Janus materials hold a great importance in spintronic and valleytronic applications due to their unique lattice structures and emergent properties. They intrinsically exhibit both an in-plane inversion and out-of-plane mirror symmetry breakings, which offer a new degree of freedom to electrons in the material. One of the main limitations in the multifunctional applications of these materials is, however, that, they are usually non-magnetic in nature. Here, using first-principles calculations, we propose to induce magnetic degree of freedom in non-magnetic WSTe via doping with transition metal (TM) elements -- Fe, Mn and Co. Further, we comprehensively probe the electronic, spintronic and valleytronic properties in these systems. Our simulations predict intrinsic Rashba and Zeeman-type spin splitting in pristine WSTe. The obtained Rashba parameter is $\sim$ 422 meVÅ\; along the $Γ- K$ direction. Our study shows a strong dependence on uniaxial and biaxial strains where we observe an enhancement of $\sim$ 2.1\% with 3\% biaxial compressive strain. The electronic structure of TM-substituted WSTe reveals half-metallic nature for 6.25 and 18.75\% of Fe, 25\% of Mn, and 18.75 and 25\% of Co structures, which leads to 100\% spin polarization. The obtained values of valley polarization 65, 54.4 and 46.3 meV for 6.25\% of Fe, Mn and Co, respectively, are consistent with the literature data for other Janus materials. Further, our calculations show a strain dependent tunability of valley polarization, where we find an increasing (decreasing) trend with uniaxial and biaxial tensile (compressive) strains. We observed a maximum enhancement of $\sim$ 1.72\% for 6.25\% of Fe on application of 3\% biaxial tensile strain.

cond-mat.mtrl-sci↗

arXiv2023

Modulating thermoelectric properties in oxygen-passivated Sb2Te3 thin film through grain boundary engineering

The present study demonstrates the effectiveness of incorporating oxygen atoms into the Sb2Te3 thin film, leading to an improved power factor and reduction in thermal conductivity. Based on the experimental evidence, it can be inferred that oxygen-related impurities preferentially wet the grain boundary (GB) and introduce a double Schottky barrier at the GB interface, promoting energy-dependent carrier scattering, ultimately leading to a rise in the Seebeck coefficient. Additionally, the introduction of chemisorbed oxygen creates a high mobility state within the valence band of Sb2Te3, as corroborated by theoretical calculations, resulting in a significantly increased electrical mobility. These factors collectively contribute to improved thermoelectric performance. A set of Scanning probe (SPM) techniques is used to experimentally confirm the alteration in charge transport resulting from the oxygen-passivated grain boundary. Additionally, Scanning Thermal Microscopy (SThM) is employed to observe the spatial variations of thermal conductivity at the nanoscale regime. This study presents a comprehensive microscopic investigation of the impact of oxygen on the phonon and charge carrier transport characteristics of Sb2Te3 thermoelectric materials and indicates that incorporating oxygen may represent a feasible approach to improve the thermoelectric efficiency of these materials.

cond-mat.mtrl-sci↗

arXiv2023

Emergence of half-metallic ferromagnetism in transition metal substituted Na$_{0.5}$Bi$_{0.5}$TiO$_3$

The multifunctional materials with prominent properties such as electrical, ferroelectric, magnetic, optical and magneto-optical are of keen interest to several practical implications. In the roadmap of designing such materials, in the present work, using density functional theory based first-principles calculations, we have investigated the functional properties of transition metal substituted-NBT. Our calculations predict the emergence of half-metallic ferromagnetism in the system. A nonzero magnetic moment of 1.49 $μ_{\rm B}/{\rm f.u.}$ is obtained for 25\% concentration of Ni. Our data on optical properties for pure NBT is in excellent agreement with available theory and experiments. For Ni-NBT, we observed a diverging nature of static dielectric constant, which could be attributed to the induced metallic character in the material. Our simulations on MOKE predict a significant Kerr signal of 0.7$^\circ$ for 6.25\% Ni-concentration.

cond-mat.mtrl-sci↗

arXiv2023

First-principles study of disordered half-Heusler alloys \textit{X}Fe$_{0.5}$Ni$_{0.5}$Sn (\textit{X} = Nb, Ta) as thermoelectric prospects

High lattice thermal conductivity in half-Heusler alloys has been the major bottleneck in thermoelectric applications. Disordered half-Heusler alloys could be a plausible alternative to this predicament. In this paper, utilizing first-principles simulations, we have demonstrated the low lattice thermal conductivity in two such phases, NbFe$_{0.5}$Ni$_{0.5}$Sn and TaFe$_{0.5}$Ni$_{0.5}$Sn, in comparison to well-known half-Heusler alloy TiCoSb. We trace the low thermal conductivity to their short phonon lifetime, originating from the interaction among acoustic and low-lying optical phonons. We recommend nanostructuring as an effective route in further diminishing the lattice thermal conductivity. We further predict that these alloys can be best used in the temperature range 400-600~K and carrier concentration of less than 10$^{21}$ carriers cm$^{-3}$. We found $\sim$35\% and $\sim$17\% enhancement in $ZT$ for NbFe$_{0.5}$Ni$_{0.5}$Sn and TaFe$_{0.5}$Ni$_{0.5}$Sn, respectively, as compared to TiCoSb. We are optimistic of the findings and believe these materials would attract experimental investigations.

cond-mat.mtrl-sci↗

arXiv2023

Ab initio study of NaSrSb and NaBaSb as potential thermoelectric prospects

Zintl phases are excellent thermoelectric prospects to put the waste heat to good use. In the quest of the same, using first-principles methods combined with Boltzmann transport theory, we explored two recent phases NaSrSb and NaBaSb. We found low lattice thermal conductivity of 1.9 and 1.3 W m$^{-1}$ K$^{-1}$ at 300~K for NaSrSb and NaBaSb, respectively, which are of the same order as other potential Zintl phases such as Sr$_3$AlSb$_3$ and BaCuSb. We account for such low values to short phonon lifetimes, small phonon group velocities, and lattice anharmonicity in the crystal structure. The calculated electrical transport parameters based on acoustic deformation potential, ionized impurity, and polar optical phonon scattering mechanisms reveal large Seebeck coefficients for both materials. Further, we obtain a high figure of merit of ZT$\sim$2.0 at 900~K for \textit{n}-type NaSrSb. On the other hand, the figure of merit of \textit{n}-type NaBaSb surpasses the unity. We are optimistic about our findings and believe our work would set a basis for future experimental investigations.

cond-mat.mtrl-sci↗