arXiv subjects

Chandan Kumar

Publications and source records attributed to Chandan Kumar.

64 records · Page 4Linked to original sources

arXiv2018

On-demand quantum key distribution using superconducting rings with a mesoscopic Josephson junction

We present a quantum key distribution (QKD) protocol based on long lived coherent states prepared on superconducting rings with a mesoscopic Josephson junction (dc-SQUIDs). This enables storage of the prepared states for long durations before actually performing the key distribution. Our on-demand QKD protocol is closely related to the coherent state based continuous variable quantum key distribution protocol. A detailed analysis of preparation, evolution and different measurement schemes that are required to be implemented on dc-SQUIDs to carry out the QKD is provided. We present two variants of the protocol, one requiring time stamping of states and offering a higher key rate and the other without time stamping and a lower key rate. This is a step towards having non-photon based QKD protocols which will be eventually desirable as photon states cannot be stored for long and therefore the key distribution has to be implemented immediately after photon exchange has occurred. Our protocol offers an innovative scheme to perform QKD and can be realized using current experimental techniques.

quant-ph↗

arXiv2018

Equilibration of Quantum hall edges in symmetry broken bilayer graphene

Equilibration of quantum Hall edges is studied in a high quality dual gated bilayer graphene device in both unipolar and bipolar regime when all the degeneracies of the zero energy Landau level are completely lifted. We find that in the unipolar regime when the filling factor under the top gate region is higher than the back gate filling factor, the equilibration is partial based on their spin polarization. However, the complete mixing of the edge states is observed in the bipolar regime irrespective of their spin configurations due to the Landau level collapsing at the sharp pn junction in our thin hBN (~ 15 nm) encapsulated device, in consistent with the existing theory.

cond-mat.mes-hall↗

arXiv2018

Localization physics in graphene Moire superlattices

Non-trivial Berry phase of graphene leads to unusual quantum correction to the conductivity. Berry phase of pi in single layer graphene (SLG) and 2pi in bi-layer graphene (BLG) is expected to reveal weak anti-localization (WAL) and weak localization (WL), respectively. However, experimentally both WAL and WL have been observed in graphene devices depending on the strength of different scattering mechanisms. Graphene superlattice having multiple Dirac cones is expected to exhibit pi to 2pi Berry phase transition from primary Dirac cone (PDC) to cloned Dirac cone (CDC). However, its effect on localization physics has not been explored yet. In this letter we present the magneto-conductance study in a hexagonal Boron-nitride (hBN)-graphene moire superlattice. Our results reveal a transition from WAL at PDC to WL at CDC in a single device by tuning the Fermi energy. The transition is supported by the quantum oscillation measurements showing a shift of pi phase from PDC to CDC and corresponding theoretical calculation capturing the Berry phase transition. Thus, our studies on localization physics in graphene superlattice pave the way to understand the carrier dynamics at multiple Dirac cones.

cond-mat.mes-hall↗

arXiv2017

Equilibration of quantum hall edge states and its conductance fluctuations in graphene p-n junctions

We report an observation of conductance fuctuations (CFs) in the bipolar regime of quantum hall (QH) plateaus in graphene (p-n-p/n-p-n) devices. The CFs in the bipolar regime are shown to decrease with increasing bias and temperature. At high temperature (above 7 K) the CFs vanishes completely and the flat quantized plateaus are recovered in the bipolar regime. The values of QH plateaus are in theoretical agreement based on full equilibration of chiral channels at the p-n junction. The amplitude of CFs for different filling factors follows a trend predicted by the random matrix theory. Although, there are mismatch in the values of CFs between the experiment and theory but at higher filling factors the experimental values become closer to the theoretical prediction. The suppression of CFs and its dependence has been understood in terms of time dependent disorders present at the p-n junctions.

cond-mat.mes-hall↗

arXiv2017

Analyzing the Impact of Cognitive Load in Evaluating Gaze-based Typing

Gaze-based virtual keyboards provide an effective interface for text entry by eye movements. The efficiency and usability of these keyboards have traditionally been evaluated with conventional text entry performance measures such as words per minute, keystrokes per character, backspace usage, etc. However, in comparison to the traditional text entry approaches, gaze-based typing involves natural eye movements that are highly correlated with human brain cognition. Employing eye gaze as an input could lead to excessive mental demand, and in this work we argue the need to include cognitive load as an eye typing evaluation measure. We evaluate three variations of gaze-based virtual keyboards, which implement variable designs in terms of word suggestion positioning. The conventional text entry metrics indicate no significant difference in the performance of the different keyboard designs. However, STFT (Short-time Fourier Transform) based analysis of EEG signals indicate variances in the mental workload of participants while interacting with these designs. Moreover, the EEG analysis provides insights into the user's cognition variation for different typing phases and intervals, which should be considered in order to improve eye typing usability.

cs.HC↗

arXiv2016

Electron-Hole Asymmetry in the Electron-phonon Coupling in Top-gated Phosphorene Transistor

Using in-situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that its phonons with A$_g$ symmetry depend much more strongly on concentration of electrons than that of holes, while the phonons with B$_g$ symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving $π$ and $σ$ bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.

cond-mat.mes-hall↗

arXiv2015

Probing 2D Black Phosphorus by Quantum Capacitance Measurements

Two-dimensional materials and their heterostructures have emerged as a new class of materials for not only fundamental physics but also for electronic and optoelectronic applications. Black phosphorus (BP) is a relatively new addition to this class of materials. Its strong in plane anisotropy makes BP a unique material to make conceptually new type of electronic devices. However, the global density of states (DOS) of BP in device geometry has not been measured experimentally. Here we report the quantum capacitance measurements together with conductance measurements on a hBN protected few layer BP ($\sim$ 6 layer) in a dual gated field effect transistor (FET) geometry. The measured DOS from our quantum capacitance is compared with the density functional theory (DFT). Our results reveal that the transport gap for quantum capacitance is smaller than that in conductance measurements due to the presence of localized states near the band edge. The presence of localized states is confirmed by the variable range hopping seen in our temperature-dependence conductivity. A large asymmetry is observed between the electron and hole side. The asymmetric nature is attributed to the anisotropic band dispersion of BP. Our measurements establish the uniqueness of quantum capacitance in probing the localized states near the band edge, hitherto not seen in the conductance measurements.

cond-mat.mes-hall↗

arXiv2014

Origin of Matching Effect in Anti-dot Array of Superconducting NbN Thin Films

We investigate the origin of matching effect observed in disordered superconducting NbN thin films with periodic array of holes. In addition to the periodic variation in the electrical resistance just above the superconducting transition temperature, Tc0, we find pronounced periodic variations with magnetic field in all dynamical quantities which can be influenced by flux-line motion under an external drive such as the magnetic shielding response and the critical current which survive in some samples down to temperatures as low as 0.09Tc0. In contrast, the superconducting energy gap, D which is a true thermodynamic quantity does not show any periodic variation with magnetic fields for the same films. Our results show that commensurate pinning of the flux line lattice driven by vortex-vortex interaction is the dominant mechanism for the observed matching effects in these superconducting anti-dot films rather than Little-Parks like quantum interference effect.

cond-mat.mes-hall↗

arXiv2013

A two-coil mutual inductance technique to study matching effect in disordered NbN thin films

Although matching effects in superconducting anti-dot arrays have been studied extensively through magneto-resistance oscillations, these investigations have been restricted to a very narrow temperature window close to the superconducting transition. Here we report a "two coil" mutual inductance technique, which allows the study of this phenomenon deep in the superconducting state, through a direct measurement of the magnetic field variation of the shielding response. We demonstrate how this technique can be used to resolve outstanding issues on the origin of matching effects in superconducting thin films with periodic array of holes grown on anodized alumina membranes.

cond-mat.supr-con↗

arXiv2008

Effects of elastic heterogeneity and anisotropy on the morphology of self-assembled epitaxial quantum dots

Epitaxial self-assembled quantum dots (SAQDs) are of both technological and fundamental interest, but their reliable manufacture still presents a technical challenge. To better understand the formation, morphology and ordering of epitaxial self-assembled quantum dots (SAQDs), it is essential to have an accurate model that can aid further experiments and predict the trends in SAQD formation. SAQDs form because of the destabilizing effect of elastic mismatch strain, but most analytic models and some numerical models of SAQD formation either assume an elastically homogeneous anisotropic film-substrate system or assume an elastically heterogeneous isotropic system. In this work, we perform the full film-substrate elastic calculation. Then we incorporate the elasticity calculation into a stochastic linear growth model. We find that using homogeneous elasticity can cause errors in the elastic energy density as large as 26%, and for typical modeling parameters lead to errors of about 11% in the estimated value of average dot spacing. We also quantify the effect of elastic heterogeneity on the order estimates of SAQDs and confirm previous finding on the possibility of order enhancement by growing a film near the critical film height.

cond-mat.mtrl-sci↗