arXiv subjects

Chandraman Patil

Publications and source records attributed to Chandraman Patil.

7 recordsLinked to original sources

arXiv2025

MoS2 Based 2D Material Photodetector Array with high Pixel Density

Arrays of photodetector-based pixel sensors are ubiquitous in modern devices, such as smart phone cameras, automobiles, drones, laptops etc. Two dimensional (2D) material-based photodetector arrays are a relevant candidate, especially for applications demanding planar formfactors. However, shortcomings in pixel density and prototyping without cross contamination limit technology adoption and impact. Also, while 2D material detectors offer high absorption, graphene's closed bandgap results in undesirably high dark currents. Here, we introduce the experimental demonstration of dense planar photodetector arrays. We demonstrate a micrometer narrow pitched 2D detector pixels and show this approach's repeatability by verifying performance of a 16-pixel array. Such dense and repeatable detector realization is enabled by a novel, selective, contamination free 2D material transfer system, that we report here in automated operation. The so realized photodetectors responsivity peaks at 0.8 A/W. Furthermore, we achieve uniform detector performance via bias voltage tuning calibration to maximize deployment. Finally, we demonstrate 2D arrayed photodetectors not only on a silicon chip platform but also demonstrate and very array performance on flexible polymer substrates. Densely arrayed, flat, bendable, and uniform performing photodetector pixels enable emerging technologies in the space where lightweight and reliable performance is required, such as for smart phones and emerging AR/VR markets, but smart gadgets, wearables, and for SWAP constrained aviation and space platforms.

physics.optics↗

arXiv2023

Towards Developing Mid-Infrared Photonics Using Mxenes

Recent research and development in the mid-infrared (IR) wavelength range (2-20 um) for a variety of applications, such as trace gas monitoring, thermal imaging, and free space communications have shown tremendous and fascinating progress. MXenes, which mainly refer to two-dimensional (2D) transition-metal carbides, nitrides, and carbonitrides, have drawn a lot of interest since their first investigation in 2011. MXenes project enormous potential for use in optoelectronics, photonics, catalysis, and energy harvesting fields proven by extensive experimental and theoretical studies over a decade. MXenes offers a novel 2D nano platform for cutting-edge optoelectronics devices due to their interesting mechanical, optical, and electrical capabilities, along with their elemental and chemical composition. We here discuss the key developments of MXene emphasizing the evolution of material synthesis methods over time and the resulting device applications. Photonic and optoelectronic device design and fabrication for mid-IR photonics are demonstrated by integrating MXene materials with various electrical and photonic platforms. Here, we show the potential of using Mxene in photonics for mid-IR applications and a pathway toward achieving next-generation devices for various applications.

physics.optics↗

arXiv2022

Self-Driven Highly Responsive PN Junction InSe Heterostructure Near-Infrared Light Detector

Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light matter interaction. Photodetectors based on two dimensional (2D) material van der Waals heterostructures have shown high responsivity and compact integration capability, mainly in the visible range due to their intrinsic bandgap. The spectral region of near-infrared (NIR) is technologically important featuring many data communication and sensing applications. While some initial NIR 2D material-based detectors have emerged, demonstrating doping junction based 2D material photodetectors with the capability to harness the charge separation photovoltaic effect are yet outstanding. Here, we demonstrate a 2D p-n van der Waals heterojunction photodetector constructed by vertically stacking p type and n type few layer indium selenide (InSe) 2D flakes. This heterojunction charge separation based photodetector shows a three fold enhancement in responsivity at near infrared spectral region (980 nm) as compared to a photoconductor detector based on p or n only doped regions, respectively. We show, that this junction device exhibits self-powered photodetection operation and hence enables few pA-low dark currents, which is about 4 orders of magnitude more efficient than state of the art foundry based devices.

physics.optics↗

arXiv2022

Integrated ultra-high-performance graphene optical modulator

With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous material integration into Silicon- and Nitride-based photonics has showed high-speed promise, albeit at the expense of millimeter- to centimeter-scale footprints. The hunt for an electro-optic modulator that combines high speed, energy efficiency, and compactness to support high component density on-chip continues. Using a double-layer graphene optical modulator integrated on a Silicon photonics platform, we are able to achieve 60 GHz speed (3 dB roll-off), micrometer compactness, and efficiency of 2.25 fJ/bit in this paper. The electro-optic response is boosted further by a vertical distributed-Bragg-reflector cavity, which reduces the driving voltage by about 40 times while maintaining a sufficient modulation depth (5.2 dB/V). Modulators that are small, efficient, and quick allow high photonic chip density and performance, which is critical for signal processing, sensor platforms, and analog- and neuromorphic photonic processors.

physics.optics↗

arXiv2021

Highly Accurate, Reliable and Non-Contaminating Two-Dimensional Material Transfer System

The exotic properties of two-dimensional (2D) materials and 2D heterostructures, built by forming heterogeneous multi-layered stacks, have been widely explored across a number of subject matters following the goal to invent, design, and improve applications enabled by 2D materials. To successfully harvest these unique properties effectively and increase the yield of manufacturing 2D material-based devices for achieving reliable and repeatable results is the current challenge. The scientific community has introduced various experimental transfer systems explained in detail for exfoliated 2D materials, however, the field lacks statistical analysis and the capability of producing a transfer technique enabling; i) high transfer precision and yield, ii) cross-contamination free transfer, iii) multi-substrate transfer, and iv) rapid prototyping without wet chemistry. Here we introduce a novel 2D material deterministic transfer system and experimentally show its high accuracy, reliability, repeatability, and non-contaminating transfer features by demonstrating fabrication of 2D material-based optoelectronic devices featuring novel device physics and unique functionality. Such rapid and material-near prototyping capability can accelerate not only layered material science in discovery but also engineering innovations.

cond-mat.mes-hall↗

arXiv2020

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

cond-mat.mes-hall↗

arXiv2018

Loss and Coupling Tuning via Heterogeneous Integration of MoS2 Layers in Silicon Photonics

Layered two-dimensional (2D) materials provide a wide range of unique properties as compared to their bulk counterpart, making them ideal for heterogeneous integration for on-chip interconnects. Hence, a detailed understanding of the loss and index change on Si integrated platform is a prerequisite for advances in opto-electronic devices impacting optical communication technology, signal processing, and possibly photonic-based computing. Here, we present an experimental guide to characterize transition metal dichalcogenides (TMDs), once monolithically integrated into the Silicon photonic platform at 1.55 um wavelength. We describe the passive tunable coupling effect of the resonator in terms of loss induced as a function of 2D material layer coverage length and thickness. Further, we demonstrate a TMD-ring based hybrid platform as a refractive index sensor where resonance shift has been mapped out as a function of flakes thickness which correlates well with our simulated data. These experimental findings on passive TMD-Si hybrid platform open up a new dimension by controlling the effective change in loss and index, which may lead to the potential application of 2D material based active on chip photonics.

physics.optics↗