arXiv subjects

Chandrasekhar Murapaka

Publications and source records attributed to Chandrasekhar Murapaka.

6 recordsLinked to original sources

arXiv2026

Giant enhancement in spin-to-charge conversion in Bi2Se3/NiFe heterostructure via interface engineering

Topological insulators provide a promising platform for spintronic applications owing to their spin-momentum-locked surface states and efficient spin-to-charge conversion. Among these, Bi2Se3 has been the subject of intensive investigation due to its large bulk bandgap and single Dirac cone band structure. However, spin-to-charge conversion strongly depends on the quality of the topological insulator/ferromagnet interface. Here, we investigate spin transport and spin-to-charge conversion in sputter-deposited Bi2Se3/Ti/NiFe heterostructures at room temperature. The topological insulator layer is deposited on a CMOS-compatible silicon substrate. Low-temperature magnetoresistance measurements are conducted to establish the existence of a surface conducting channel in the deposited topological insulator layer. Pure spin current is injected into the Bi2Se3 layer through the titanium spacer layer via spin pumping induced by the spin precession in microwave-driven ferromagnetic resonance of the ferromagnetic film. Spin pumping studies are carried out by varying the thickness of the Bi2Se3 layer. The Bi2Se3 thickness dependence of the Gilbert damping reveals a pronounced 55% enhancement at a thickness of 4 nm, consistent with the hybridization of the top and bottom surface states of the topological insulator layer. The spin Hall angle, a parameter that quantifies the spin-to-charge conversion efficiency, exhibits an approximately one-order-of-magnitude enhancement upon insertion of the Ti spacer compared with Bi2Se3/NiFe heterostructures without the spacer. The significant enhancement of the spin Hall angle is attributed to Ti, which inhibits interdiffusion between the Bi2Se3 and NiFe layers, thereby protecting the topological surface states. Our findings highlight the role of titanium spacers in topological spintronics applications.

cond-mat.mtrl-sci↗

arXiv2026

Orbital Hall effect-driven spin-orbit torque enhancement in Ti-based systems via rare-earth interface engineering

Orbital currents in light metals offer large orbital Hall conductivities, yet translating this into practical spin-orbit torque efficiency is hindered by fundamental limitations. In this work, we introduce a Gd interlayer between a Ti orbital source and a Co ferromagnet to enhance the orbital torque efficiency. Ferromagnetic resonance-based spin (orbital) pumping measurements identify an optimal Gd thickness of around 4 nm, where the orbital-to-spin conversion efficiency reaches its maximum. The Ti-thickness dependence of the inverse orbital Hall effect signal confirms a bulk orbital Hall origin in Ti and yields a qualitative orbital diffusion length exceeding 20 nm. Spin-torque ferromagnetic resonance measurements demonstrate a fivefold enhancement of the SOT efficiency in Ti(20 nm)/Co compared to a Gd(4 nm)/Co reference. Interestingly, the trilayer Ti/Gd/Co architecture exhibits a spin (orbital) torque efficiency greater than 1, which is higher than that of the bilayer Ti/Co and Gd/Co structures, irrespective of Ti thickness. These results establish rare-earth interlayer engineering as a viable route to enhanced orbital torque efficiency for next-generation spin-orbitronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Effect of RKKY and dipolar interaction on the nucleation of skyrmion in Pt/Co multilayer with Ir spacer

Magnetic skyrmions, topologically protected spin textures, have emerged as promising candidates for next-generation spintronic applications. In this study, we investigate the stabilization of skyrmionic states in a uniquely engineered Pt/Co multilayer system with an Ir spacer, where both Ruderman Kittel Kasuya Yosida (RKKY) and dipolar interactions play a crucial role. The studied multilayer structure consists of a synthetic antiferromagnetic (SAF) configuration, where a single Ir layer facilitates strong antiferromagnetic coupling between two ferromagnetic regions: FM1 (top) and FM2 (bottom), each formed by repeated Co layers separated by Pt, enabling significant dipolar interactions. This FM1/Ir/FM2 configuration results in a distinctive skyrmionic hysteresis loop, driven by the interplay of dipolar and RKKY interactions. Magnetic force microscopy (MFM) imaging confirms the nucleation of isolated skyrmions, while magnetotransport measurements reveal a finite topological Hall effect (THE), indicating the chiral nature of these spin textures. Furthermore, we demonstrate that increasing the Co layer thickness leads to a reduction in magnetic anisotropy, which in turn results in the formation of relatively larger and denser skyrmions. Our findings establish a robust approach for stabilizing skyrmions through the combined effects of dipolar and RKKY interactions, offering new pathways for controlled skyrmion manipulation in spintronic devices.

cond-mat.mtrl-sci↗

arXiv2024

Vanadium Doped Magnetic MoS2 Monolayers of Improved Electrical Conductivity as Spin-Orbit Torque Layer

Two-dimensional (2D) transition metal di-chalcogenide layers with high electrical conductivity and spin-orbit coupling (SOC) can find huge potential in spintronic devices. With limited success of 2D spin Hall material development, we demonstrate vanadium (V) substitutionally doped monolayer MoS2 (VMS) as a potential spin Hall material having tunable electrical conductivity, SOC strength, and room temperature magnetism. Systematic enhancement in the electrical conductivity is observed with the extent of V doping, where it is enhanced from ~0.3 S/m of MoS2 to ~100000 S/m upon doping to the level of 9 atomic%. Ferromagnetic resonance (FMR) based spin-pumping experiments indicate the spin transport across the junction of permalloy (Py) and VMS. Spin-torque FMR measurements demonstrate the suggesting latter's potential as a spin-orbit torque layer in 2D spintronic devices.

physics.app-ph↗

arXiv2021

Effect of seed layer thickness on Ta crystalline phase and spin Hall angle

Heavy metal-ferromagnet bilayer structures have attracted great research interest for charge-to-spin interconversion. In this work, we have investigated the effect of the permalloy seed layer on the Ta polycrystalline phase and its spin Hall angle. Interestingly, for the same deposition rates the crystalline phase of Ta deposited on Py seed layer strongly depends on the thickness of the seed layer. We have observed a phase transition from $α$-Ta to ($α$+$β$)-Ta while increasing the Py seed layer thickness. The observed phase transition is attributed to the strain at interface between Py and Ta layers. Ferromagnetic resonance-based spin pumping studies reveal that the spin-mixing conductance in the to ($α$+$β$)-Ta is relatively higher as compared to the to $α$-Ta. Spin Hall angles of to $α$-Ta and to ($α$+$β$)-Ta are extracted from inverse spin Hall effect (ISHE) measurements. Spin Hall angle of the to ($α$+$β$)-Ta is estimated to be $θ$_SH=-0.15 which is relatively higher than that of to $α$-Ta. Our systematic results connecting the phase of the Ta with seed layer and its effect on the efficiency of spin to charge conversion might resolve ambiguities across various literature and open up new functionalities based on the growth process for the emerging spintronic devices.

cond-mat.mtrl-sci↗

arXiv2020

Skyrmion Racetrack memory with an antidot

Skyrmion racetrack memory has a lots of potential in future non-volatile solid state devices. In general such devices require current to nucleate skyrmions via spin transfer torque (STT) effect. Further the current is also required to drive the skyrmions in the nanowire device. However the current applied during nucleation of successive skyrmions may have unwanted perturbation \emph{viz.} Joule heating and skyrmion Hall effect, on the propagation of previously generated skyrmions. Therefore new methodology is required to decouple the generation and propagation of skyrmions. Here we present a novel route via micromagnetic simulation for generation of skyrmions from triangular antidot structure in a ferromagnetic nanotrack using local oersted field. Antidots are holes in a magnetic nanoelement. Controlled skyrmion injection can be achieved by tuning the dimensions of the antidots that are placed at either end of the nanotrack. Multiple skyrmions can be simultaneously generated by incorporating more number of antidots. Here we propose a novel design to realise skyrmionic racetrcak memory where one can individually generate and manipulate the skyrmions within the nanotrack.

cond-mat.mtrl-sci↗