arXiv subjects

Chang Niu

Publications and source records attributed to Chang Niu.

30 records · Page 2Linked to original sources

arXiv2024

BiPC: Bidirectional Probability Calibration for Unsupervised Domain Adaption

Unsupervised Domain Adaptation (UDA) leverages a labeled source domain to solve tasks in an unlabeled target domain. While Transformer-based methods have shown promise in UDA, their application is limited to plain Transformers, excluding Convolutional Neural Networks (CNNs) and hierarchical Transformers. To address this issues, we propose Bidirectional Probability Calibration (BiPC) from a probability space perspective. We demonstrate that the probability outputs from a pre-trained head, after extensive pre-training, are robust against domain gaps and can adjust the probability distribution of the task head. Moreover, the task head can enhance the pre-trained head during adaptation training, improving model performance through bidirectional complementation. Technically, we introduce Calibrated Probability Alignment (CPA) to adjust the pre-trained head's probabilities, such as those from an ImageNet-1k pre-trained classifier. Additionally, we design a Calibrated Gini Impurity (CGI) loss to refine the task head, with calibrated coefficients learned from the pre-trained classifier. BiPC is a simple yet effective method applicable to various networks, including CNNs and Transformers. Experimental results demonstrate its remarkable performance across multiple UDA tasks. Our code will be available at: https://github.com/Wenlve-Zhou/BiPC.

cs.CV↗

arXiv2024

Small Object Few-shot Segmentation for Vision-based Industrial Inspection

Vision-based industrial inspection (VII) aims to locate defects quickly and accurately. Supervised learning under a close-set setting and industrial anomaly detection, as two common paradigms in VII, face different problems in practical applications. The former is that various and sufficient defects are difficult to obtain, while the latter is that specific defects cannot be located. To solve these problems, in this paper, we focus on the few-shot semantic segmentation (FSS) method, which can locate unseen defects conditioned on a few annotations without retraining. Compared to common objects in natural images, the defects in VII are small. This brings two problems to current FSS methods: 1 distortion of target semantics and 2 many false positives for backgrounds. To alleviate these problems, we propose a small object few-shot segmentation (SOFS) model. The key idea for alleviating 1 is to avoid the resizing of the original image and correctly indicate the intensity of target semantics. SOFS achieves this idea via the non-resizing procedure and the prototype intensity downsampling of support annotations. To alleviate 2, we design an abnormal prior map in SOFS to guide the model to reduce false positives and propose a mixed normal Dice loss to preferentially prevent the model from predicting false positives. SOFS can achieve FSS and few-shot anomaly detection determined by support masks. Diverse experiments substantiate the superior performance of SOFS. Code is available at https://github.com/zhangzilongc/SOFS.

cs.CV↗

arXiv2023

Tunable Circular Photogalvanic and Photovoltaic Effect in 2D Tellurium with Different Chirality

Chirality arises from the asymmetry of matters, where two counterparts are the mirror image of each other. The interaction between circular-polarization light and quantum materials is enhanced in chiral space groups due to the structural chirality. Tellurium (Te) possesses the simplest chiral crystal structure, with Te atoms covalently bonded into a spiral atomic chain (left- or right-handed) with a periodicity of three. Here, we investigate the tunable circular photo-electric responses in 2D Te field-effect transistor with different chirality, including the longitudinal circular photogalvanic effect induced by the radial spin texture (electron-spin polarization parallel to the electron momentum direction) and the circular photovoltaic induced by the chiral crystal structure (helical Te atomic chains). Our work demonstrates the controllable manipulation of the chirality degree of freedom in materials.

cond-mat.mes-hall↗

arXiv2023

Tunable Chirality-dependent Nonlinear Electrical Responses in 2D Tellurium

Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by solution-based method shows excellent electrical, optical, and thermal properties. In this work, the chirality of hydrothermally grown 2D Te is identified and analyzed by hot sulfuric acid etching and high-angle tilted high-resolution scanning transmission electron microscopy. The gate-tunable nonlinear electrical responses, including the nonreciprocal electrical transport in the longitudinal direction and the nonlinear planar Hall effect in the transverse direction, are observed in 2D Te under a magnetic field. Moreover, the nonlinear electrical responses have opposite signs in left- and right-handed 2D Te due to the opposite spin polarizations ensured by the chiral symmetry. The fundamental relationship between the spin-orbit coupling and the crystal symmetry in two enantiomers provides a viable platform for realizing chirality-based electronic devices by introducing the chirality degree of freedom into electron transport.

cond-mat.mtrl-sci↗

arXiv2022

Measurement uncertainty relation for three observables

In this work we establish rigorously a measurement uncertainty relation (MUR) for three unbiased qubit observables, which was previously shown to hold true under some presumptions. The triplet MUR states that the uncertainty, which is quantified by the total statistic distance between the target observables and the jointly implemented observables, is lower bounded by an incompatibility measure that reflects the joint measurement conditions. We derive a necessary and sufficient condition for the triplet MUR to be saturated and the corresponding optimal measurement. To facilitate experimental tests of MURs we propose a straightforward implementation of the optimal joint measurements. The exact values of incompatibility measure are analytically calculated for some symmetric triplets when the corresponding triplet MURs are not saturated. We anticipate that our work may enrich the understanding of quantum incompatibility in terms of MURs and inspire further applications in quantum information science. This work presents a complete theory relevant to a parallel work [Y.-L. Mao, et al., Testing Heisenberg's measurement uncertainty relation of three observables, arXiv:2211.09389] on experimental tests.

quant-ph↗

arXiv2022

Testing Heisenberg's measurement uncertainty relation of three observables

Heisenberg's measurement uncertainty relations (MUR) of two quantum observables are essential for contemporary researches in quantum foundations and quantum information science. Going beyond, here we report the first experimental test of MURs for three quantum observables. Following the proposal of Bush, Lahti, and Werner [Phys. Rev. A 89, 012129 (2014)], we first establish rigorously MURs for triplets of unbiased qubit observables as combined approximation errors lower-bounded by an incompatibility measure. We then develop a convex programming protocol to numerically find the exact value of the incompatibility measure and the corresponding optimal measurements. Furthermore, we propose a novel implementation of optimal joint measurements and experimentally test our MURs using a single-photon qubit. Lastly, we discuss to analytically calculate the exact value of incompatibility measure for some symmetric triplets. We anticipate that this work may stimulate broad interests associated with the Heisenberg's uncertainty relation of multiple observables, enriching our understanding of quantum mechanics and inspiring innovative applications in quantum information science.

quant-ph↗

arXiv2022

A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current exceeding 10 A/mm, the performance of which is 2-3 times better than all known transistors with semiconductor channels. A record high transconductance of 4 S/mm is also achieved among all transistors with a planar structure. It is found that a high carrier density and high electron velocity both contribute to this remarkably high on-state performance in ALD In2O3 transistors, which is made possible by the high-quality oxide/oxide interface, the metal-like charge-neutrality-level (CNL) alignment, and the high band velocities induced by the low density-of-state (DOS). Experimental Hall, I-V and split C-V measurements at room temperature confirm a high carrier density up to 6-7*10^13 /cm2 and a high velocity of about 10^7 cm/s. Ultra-thin oxide semiconductors, with a CNL located deep inside the conduction band, represent a promising new direction for the search of alternative channel materials for high-performance semiconductor devices.

cond-mat.mes-hall↗

arXiv2021

Bilayer Quantum Hall States in an n-type Wide Tellurium Quantum Well

Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n-type doping using atomic layer deposition (ALD) technique on two-dimensional (2D) Te film. In this work, we fabricated and measured the double-gated n-type Te Hall-bar devices, which can operate as two separate or coupled electron layers controlled by the top gate and back gate. Profound Shubnikov-de Haas (SdH) oscillations are observed in both top and bottom electron layers. Landau level hybridization between two layers, compound and charge-transferable bilayer quantum Hall states at filling factor 4, 6, and 8 are analyzed. Our work opens the door for the study of Weyl physics in coupled bilayer systems of 2D materials.

cond-mat.mes-hall↗

arXiv2020

Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating

In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO transistors with a channel thickness of 1 nm, while it increases to as high as 1.06 A/mm when the channel thickness increases to 2 nm. A raised source/drain structure with a thickness of 10 nm is employed, contributing to a low contact resistance of 0.15 Ωmm and a low contact resistivity of 1.1{\times}10-7 Ωcm2. The ITO transistor with a recessed channel and ferroelectric gating demonstrates several advantages over 2D semiconductor transistors and other thin film transistors, including large-area wafer-size nanometer thin film formation, low contact resistance and contact resistivity, atomic thin channel being immunity to short channel effects, large gate modulation of high carrier density by ferroelectric gating, high-quality gate dielectric and passivation formation, and a large bandgap for the low-power back-end-of-line (BEOL) CMOS application.

physics.app-ph↗

arXiv2020

Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene

Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manifest through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable bandgaps due to their accidental band-crossing origin. Here we report the first experimental observation of Weyl fermions in a semiconductor. Tellurene, the 2D form of tellurium, possesses chiral crystal structure which induces unconventional Weyl nodes with a hedgehog-like radial spin texture near the conduction band edge. We synthesize high-quality n-type tellurene by a hydrothermal method with subsequent dielectric doping and detect a topologically non-trivial pi Berry phase in quantum Hall sequences. Our work expands the spectrum of Weyl matter into semiconductors and offers a new platform to design novel quantum devices by marrying the advantages of topological materials to versatile semiconductors.

cond-mat.mes-hall↗

arXiv2020

A Ferroelectric Semiconductor Field-Effect Transistor

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device. α-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 μA μm-1, and a low supply voltage.

physics.app-ph↗

arXiv2019

Gate-tunable Strong Spin-orbit Interaction in Two-dimensional Tellurium Probed by Weak-antilocalization

Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of the intrinsic p-type nature of Te crystal. By atomic layer deposited dielectric doping technique, we are able to access the conduction band transport properties of Te in a controlled fashion. In this paper, we report on a systematic study of weak-antilocalization (WAL) effect in n-type two-dimensional (2D) Te films. We find that the WAL agrees well with Iordanskii, Lyanda-Geller, and Pikus (ILP) theory. The gate and temperature dependent WAL reveals that Dyakonov-Perel (DP) mechanism is dominant for spin relaxation and phase relaxation is governed by electron-electron (e-e) interaction. Large phase coherence length near 600nm at T=1K is obtained, together with gate tunable spin-orbit interaction (SOI). Transition from weak-localization (WL) to weak-antilocalization (WAL) depending on gate bias is also observed. These results demonstrate that newly developed solution-based synthesized Te films provide a new controllable strong SOI 2D semiconductor with high potential for spintronic applications.

cond-mat.mes-hall↗