arXiv subjects

Chang-Won Choi

Publications and source records attributed to Chang-Won Choi.

3 recordsLinked to original sources

arXiv2026

Pre-Patterned Superconducting Contacts for Clean Superconductor-Topological Material Interfaces Enabling Long-Range Josephson Coupling

Phase-coherent superconducting proximity in topological materials requires clean superconductor-topological material (SC-TM) interfaces, yet conventional top-contact fabrication often degrades them through oxidation, polymer residue, and process-induced disorder. Here we introduce a pre-patterned superconducting bottom-contact architecture in which MoRe/Au electrodes are defined before van der Waals crystal transfer, thereby avoiding on-flake lithography after transfer. In WTe2- and Bi1.5Sb0.5Te1.7Se1.3-based Josephson junctions, this architecture yields systematically larger I_c R_N and longer-ranged coupling than conventional top contacts. Cross-sectional STEM/EDS reveals atomically abrupt, chemically well-separated interfaces. These results establish pre-patterned SC-TM contacts as a practical route to reproducible, micrometer-scale Josephson platforms in van der Waals topological materials.

cond-mat.mes-hall↗

arXiv2025

Thermodynamically driven tilt grain boundaries of monolayer crystals using catalytic liquid alloys

We report a method to precisely control the atomic defects at grain boundaries (GBs) of monolayer MoS2 by vapor-liquid-solid (VLS) growth using sodium molybdate liquid alloys, which serve as growth catalysts to guide the formations of the thermodynamically most stable GB structure. The Mo-rich chemical environment of the alloys results in Mo-polar 5|7 defects with a yield exceeding 95%. The photoluminescence (PL) intensity of VLS-grown polycrystalline MoS2 films markedly exceeds that of the films exhibiting abundant S 5|7 defects, which are kinetically driven by vapor-solid-solid growths. Density functional theory calculations indicate that the enhanced PL intensity is due to the suppression of non-radiative recombination of charged excitons with donor-type defects of adsorbed Na elements on S 5|7 defects. Catalytic liquid alloys can aid in determining a type of atomic defect even in various polycrystalline 2D films, which accordingly provides a technical clue to engineer their properties.

cond-mat.mtrl-sci↗

arXiv2025

Interstitially bridged van der Waals interface enabling stacking-fault-free, layer-by-layer epitaxy

Van der Waals (vdW) crystals are prone to twisting, sliding, and buckling due to inherently weak interlayer interactions. While thickness-controlled vdW structures have attracted considerable attention as ultrathin semiconducting channels, the deterministic synthesis of stacking-fault-free multilayers remains a persistent challenge. Here, we report the epitaxial growth of single-crystalline hexagonal bilayer MoS 2 , enabled by the incorporation of Mo interstitials between layers during layer-by-layer deposition. The resulting bilayers exhibit exceptional structural robustness, maintaining their crystallinity and suppressing both rotational and translational interlayer misalignments even after transfer processes. Atomic-resolution analysis reveals that the Mo interstitials are located at a single sublattice site within the hexagonal lattice, where they form tetrahedral bonds with sulfur atoms from both MoS 2 layers, effectively anchoring the interlayer registry. Density functional theory calculations further indicate that these Mo atoms act as nucleation centers, promoting the selective formation of the hexagonal bilayer phase. This approach offers a robust strategy for the deterministic growth of multilayer vdW crystals with precisely controlled stacking order and enhanced interlayer coupling.

cond-mat.mtrl-sci↗