arXiv subjects

Changfeng Li

Publications and source records attributed to Changfeng Li.

3 recordsLinked to original sources

arXiv2022

Cumulants of net-strangeness multiplicity distributions at energies available at the BNL Relativistic Heavy Ion Collider

The higher-order cumulants of net-proton number, net-charge, and net-strangeness multiplicity distributions are widely studied to search for the quantum-chromodynamics critical point and extract the chemical freeze-out parameters in heavy-ion collisions. In this context, the event-by-event fluctuations of the net-strangeness multiplicity distributions play important roles in extracting the chemical freeze-out parameter in the strangeness sector. Due to having difficulties in detecting all strange hadrons event by event, the kaon ($K$) and lambda ($\Lambda$) particles serve as a proxy for the strangeness-related observables in heavy-ion collisions. We have studied the net-$K$, net-$\Lambda$, and net-($K$ + $\Lambda$) multiplicity distributions and calculated their different order of cumulants using the ultrarelativistic quantum molecular dynamics model and hadron resonance gas calculation. To adequately account for the net-strangeness cumulants, it has been found that the inclusion of resonance decay contributions in $K$ and $\Lambda$ is necessary.

nucl-th↗

arXiv2019

Enhanced Tunnelling in a Hybrid of Single-Walled Carbon Nanotubes and Graphene

Transparent and conductive films (TCFs) are of great technological importance. The high transmittance, electrical conductivity and mechanical strength make single-walled carbon nanotubes (SWCNTs) a good candidate for their raw material. Despite the ballistic transport in individual SWCNTs, however, the electrical conductivity of their networks is limited by low efficiency of charge tunneling between the tube elements. Here, we demonstrate that the nanotube network sheet resistance at high optical transmittance is decreased by more than 50% when fabricated on graphene and thus provides a comparable improvement as widely adopted gold chloride ($\mathrm{AuCl_3}$) doping. However, while Raman spectroscopy reveals substantial changes in spectral features of doped nanotubes, no similar effect is observed in presence of graphene. Instead, temperature dependent transport measurements indicate that graphene substrate reduces the tunneling barrier heights while its parallel conductivity contribution is almost negligible. Finally, we show that combining the graphene substrate and $\mathrm{AuCl_3}$ doping, the SWCNT thin films can exhibit sheet resistance as low as 36 $Ω$/sq. at 90% transmittance.

physics.app-ph↗

arXiv2017

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor

The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field effect transistors (GFETs) to get a competitive radio frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for the relevant scattering mechanisms (intrinsic phonons, scattering with impurities and defects, etc.). This information is fed into a self consistent simulator, which solves the drift diffusion equation coupled with the two dimensional Poisson's equation to take full account of short channel effects. Simulated GFET characteristics were benchmarked against experimental data from our fabricated devices. Our simulations show that scalability is supposed to bring to RF performance an improvement that is, however, highly limited by instability. Despite the possibility of a lower performance, a careful choice of the bias point can avoid instability. Nevertheless, maximum oscillation frequencies are still achievable in the THz region for channel lengths of a few hundreds of nanometers.

physics.app-ph↗