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Chanyong Hwang

Publications and source records attributed to Chanyong Hwang.

At least 19 recordsLinked to original sources

Demagnetization-Driven Nanoscale Chirality-Selective Thermal Switch

Chiral-lattice degrees of freedom can offer novel chirality-selective functionalities for thermotronic applications. Chiral phonons, carrying both heat and angular momentum, can emerge through a breaking of chiral degeneracy in the phonon bands, either via an intrinsic chiral crystal structure or by angular momentum transfer from photons or spins. This chiral controllability of the lattice dynamics enables a design of chiral thermo-devices by integrating ferromagnets with chiral materials. Here, we present a nanoscale chirality-selective thermal switch realized using a simple heterostructure composed of ferromagnetic [Co/Pt] multilayers and insulating chiral $α$-SiO2, where an external magnetic field can control thermal transport properties. Our experimental results based on the magneto-optic thermometry reveal that the thermal conductivity of $α$-SiO2 exhibits a clear dependence on both the magnetization direction of [Co/Pt] multilayers and the structural chirality of $α$-SiO2, which is supported well by the first-principles-based molecular dynamic simulations. The magnetization-dependent thermal on/off ratio amounts to 1.07 at room temperature and increases to about 1.2 as temperature decreases to 50 K, due to a reduction of Umklapp phonon-phonon scattering rate in $α$-SiO2. These findings provide the first experimental demonstration of the nanoscale chirality-selective thermal switch based on the ferromagnetic/chiral material heterostructure, highlighting its potential as a key technology for addressing heat dissipation challenges in nanoscale electronic devices.

cond-mat.mtrl-sci

Disorder driven crossover between anomalous Hall regimes in Fe$_3$GaTe$_2$

The large anomalous Hall conductivity (AHC) of the Fe$_3$(Ge,Ga)Te$_2$ compounds has attracted considerable attention. Here, we expose the intrinsic nature of AHC in Fe$_3$GaTe$_2$ crystals characterized by high conductivities, which show disorder-independent AHC with a pronounced value $σ_{xy}^{\text{c}}\approx$ 420 $Ω^{-1}$cm$^{-1}$. In the low conductivity regime, we observe the scaling relation $σ_{xy}\proptoσ_{xx}^{1.6}$, which crosses over to $σ_{xy} \simeq σ_{xy}^{\text{c}}$ as $σ_{xx}$ increases. Disorder in low-conductivity crystals is confirmed by the broadening of a first-order transition between ferromagnetism and the ferrimagnetic ground state. Through density functional theory (DFT) calculations, we reveal that the dominant sources of Berry curvature are located a few hundred meV below the Fermi energy around the $Γ$-point. Therefore, Fe$_3$GaTe$_2$ clearly exposes the disorder-induced crossover among distinct AHC regimes, previously inferred from measurements on different ferromagnets located in either side of the crossover region.

cond-mat.mtrl-sci

Spin frustration and unconventional spin twisting state in van der Waals ferromagnet/antiferromagnet heterostructures

Atomically flat surfaces of van der Waals (vdW) materials pave an avenue for addressing a long-standing fundamental issue of how a perfectly compensated antiferromagnet (AFM) surface frustrates a ferromagnetic (FM) overlayer in FM/AFM heterostructures. By revealing the AFM and FM spin structures separately in vdW Fe5GeTe2/NiPS3 heterostructures, we find that C-type in-plane AFM NiPS3 develops three equivalent AFM domains which are robust against external magnetic field and magnetic coupling with Fe5GeTe2. Consequently, spin frustration at the Fe5GeTe2/NiPS3 interface was shown to develop a perpendicular Fe5GeTe2 magnetization in the interfacial region that switches separately from the bulk of the Fe5GeTe2 magnetizations. In particular, we discover an unconventional spin twisting state that the Fe5GeTe2 spins twist from perpendicular direction near the interface to in-plane direction away from the interface in Fe5GeTe2/NiPS3. Our finding of the twisting spin texture is a unique property of spin frustration in van der Waals magnetic heterostructures.

cond-mat.mtrl-sci

Alternative understanding of the skyrmion Hall effect based on one-dimensional domain wall motion

A moving magnetic skyrmion exhibits transverse deflection. This so-called skyrmion Hall effect has been explained by the Thiele equation. Here, we provide an alternative interpretation of the skyrmion Hall effect based on the dynamics of domain walls enclosing the skyrmion. We relate the spin-torque-induced local rotation of the domain wall segments to the shift of the skyrmion core, explaining the skyrmion Hall effect at the micromagnetic level. Bases on our intuitive interpretation, we also show that the skyrmion Hall effect can be suppressed by combining the spin-transfer and spin-orbit torques, whereby removing the major obstacle to utilizing skyrmions in devices.

cond-mat.mes-hall

Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography

Detecting conductance quantization in graphene nanostructures turned out more challenging than expected. The observation of well-defined conductance plateaus through graphene nanoconstrictions so far has only been accessible in the highest quality suspended or h-BN encapsulated devices. However, reaching low conductance quanta in zero magnetic field, is a delicate task even with such ultra-high mobility devices. Here, we demonstrate a simple AFM-based nanopatterning technique for defining graphene constrictions with high precision (down to 10 nm width) and reduced edge-roughness (+/- 1 nm). The patterning process is based on the in-plane mechanical cleavage of graphene by the AFM tip, along its high symmetry crystallographic directions. As-defined, narrow graphene constrictions with improved edge quality enable an unprecedentedly robust QPC operation, allowing the observation of conductance quantization even on standard $SiO_2/Si$ substrates, down to low conductance quanta. Conductance plateaus, were observed at $ne^2/h$, evenly spaced by $2e^2/h$ (corresponding to n = 3, 5, 7, 9, 11) in the absence of an external magnetic field, while spaced by $e^2/h$ (n = 1, 2, 3, 4, 5, 6) in 8T magnetic field.

cond-mat.mes-hall

Spontaneous doping of the basal plane of MoS2 single-layers through oxygen substitution under ambient conditions

The chemical inertness of the defect-free basal plane confers environmental stability to MoS2 single-layers, but it also limits their chemical versatility and catalytic activity. The stability of the pristine MoS2 basal plane against oxidation under ambient conditions is a widely accepted assumption in the interpretation of various studies and applications. However, single-atom level structural investigations reported here reveal that oxygen atoms spontaneously incorporate into the basal plane of MoS2 single layers during ambient exposure. Our scanning tunneling microscopy investigations reveal a slow oxygen substitution reaction, upon which individual sulfur atoms are one by one replaced by oxygen, giving rise to solid solution type 2D MoS2-xOx crystals. O substitution sites present all over the basal plane act as single-atomic active reaction centers, substantially increasing the catalytic activity of the entire MoS2 basal plane for the electrochemical H2 evolution reaction.

cond-mat.mes-hall

Double bit in-plane magnetic skyrmions on a track

A magnetic skyrmion isusually refers to a twisted spin texture surrounded by uniformly aligned out-of-plane spinsin the background of a uniformly magnetized state. The invariance of the magnetic skyrmion conserves its topological charge under any continuous transformations of the spin textures, leads to which represents the robustness of a magnetic skyrmion their texture against external perturbations, making it ideal to use skyrmions as . Such a behaviour is required for an ideal information carriers. To date, most magnetic skyrmion studies have been performedfocused on in perpendicularly magnetized systems, where the skyrmion topological number is determined by the relative orientation between the core and /outer perpendicular magnetization directions of the skyrmion is either up/down or down/up. Here we show that there also exists a new type of magnetic skyrmion with surrounding spins to be uniformly aligned to the in-plane direction. By continuous transformation and relaxation of the spin textures of out-of-plane skyrmions, we showed that an in-plane skyrmion, where the background magnetization is in the in-plane direction, is also possible. Different from the conventional perpendicular magnetic skyrmionsContrary to the skyrmions in a perpendicularly magnetized state, the in-plane magnetic skyrmions with opposite signs of topological charges can inherentlycharges can inherently coexist in the in-plane magnetization system coexist. Moreover, the iIn-plane skyrmions of opposite charge can move together by an electric current and exhibit with an opposite spin Hall effect. These findings showdemonstrate the inherent possibility of a double-bit transfer in a single magnetic wire that is not possible in a perpendicularly magnetized system.

cond-mat.mes-hall

Dynamics of liquid crystal on hexagonal lattice

Nematic liquid crystal (LC) molecules adsorbed on two dimensional materials are aligned along the crystal directions of the hexagonal lattice. It was demonstrated that short electric pulses can reorient the aligned LC molecules in the preferred armchair direction of hexagonal boron nitride (h-BN). Several states with a variety of colors were obtained by changing the direction and strength of the electric pulses. The ab initio calculations based on density functional theory was carried out to determine the favorable adsorption configurations of the LC molecules on the h-BN surface. A non-volatile display, in which pixel resolution can be determined by grains of hexagonal surface, is proposed, which can offer a pathway towards dynamic high-quality pixels with low power consumption, and could define a new paradigm for all non-volatile display applications.

cond-mat.soft

Restoration of Topological Surface State by Vacuum Annealing in Magnetically Doped Topological Insulator

The introduction of magnetic order on the surface of topological insulators in general breaks the two-dimensional character of topological surface state (TSS). Once the TSS disappears, it is improbable to restore the topological surface properties. In this report, we demonstrate that it is possible to restore the inherent TSS by ultra-high vacuum annealing. Starting from an antiferromagnetic Gd-doped Bi2Te3, that has surface state gap without TSS properties, after annealing we observed the gap closing as well as typical TSS features in physical properties. The microscopic mechanism of atomic migration and TSS restoration by annealing process is unraveled by the combination of scanning tunneling microscopy measurements and density functional theory calculations. This approach to control the surface of topological insulators and stabilize the TSS simply by vacuum annealing provides a new platform towards the exploitation of their topological properties.

cond-mat.mtrl-sci

Novel graphene/Sn and graphene/SnOx hybrid nanostructures: Induced superconductivity and band gaps revealed by scanning probe measurements

The development of functional composite nanomaterials based on graphene and metal nanoparticles (NPs) is currently the subject of intense research interest. In this study we report the preparation of novel type of graphene/Sn and graphene/SnOx (1 < x < 2) hybrid nanostructures and their investigation by scanning probe methods. First, we prepare Sn NPs by evaporating 7 - 8 nm tin on highly oriented pyrolytic graphite substrates. Graphene/Sn nanostructures are obtained by transferring graphene on top of the tin NPs immediately after evaporation. We show by scanning tunnelling microscopy (STM) and spectroscopy (STS) that tin NPs reduce significantly the environmental p-type doping of graphene. Furthermore, we demonstrate by low-temperature STM and STS measurements that superconductivity is induced in graphene, either directly supported by Sn NPs or suspended between them. Additionally, we prepare SnOx NPs by annealing the evaporated tin at 500 ${^o}$C. STS measurements performed on hybrid graphene/SnOx nanostructures reveal the electronic band gap of SnOx NPs. The results can open new avenues for the fabrication of novel hybrid superconducting nanomaterials with designed structures and morphologies.

cond-mat.mes-hall

Preparing local strain patterns in graphene by atomic force microscope based indentation

Patterning graphene into various mesoscopic devices such as nanoribbons, quantum dots, etc. by lithographic techniques has enabled the guiding and manipulation of graphene's Dirac-type charge carriers. Graphene, with well-defined strain patterns, holds promise of similarly rich physics while avoiding the problems created by the hard to control edge configuration of lithographically prepared devices. To engineer the properties of graphene via mechanical deformation, versatile new techniques are needed to pattern strain profiles in a controlled manner. Here we present a process by which strain can be created in substrate supported graphene layers. Our atomic force microscope-based technique opens up new possibilities in tailoring the properties of graphene using mechanical strain.

cond-mat.mes-hall

Angle-dependence and optimal design for magnetic bubblecade with maximum speed

Unidirectional magnetic domain-wall motion is a key concept underlying next-generation application devices. Such motion has been recently demonstrated by applying an alternating magnetic field, resulting in the coherent unidirectional motion of magnetic bubbles. Here we report the optimal configuration of applied magnetic field for the magnetic bubblecade, the coherent unidirectional motion of magnetic bubbles, driven by a tilted alternating magnetic field. The tilted alternating magnetic field induces asymmetric expansion and shrinkage of the magnetic bubbles under the influence of the Dzyaloshinskii-Moriya interaction, resulting in continuous shift of the bubbles in time. By realizing the magnetic bubblecade in PtCoPt films, we find that the bubblecade speed is sensitive to the tilt angle with a maximum at an angle, which can be explained well by a simple analytical form within the context of the domain-wall creep theory. A simplified analytic formula for the angle for maximum speed is then given as a function of the amplitude of the alternating magnetic field. The present observation provides a practical design rule for memory and logic devices based on the magnetic bubblecade.

cond-mat.mtrl-sci

Determination of the STM tip-graphene repulsive forces by comparative STM and AFM measurements on suspended graphene

Graphene grown by chemical vapour deposition is transferred on top of flat gold nanoislands and characterized by scanning tunnelling microscopy (STM) and atomic force microscopy (AFM). Graphene bubbles are formed with lateral dimensions determined by the size and shape of nanoislands. These graphene bubbles can be squeezed during STM imaging using bias voltages of less than 250 mV and tunnelling currents of 1 nA. Similarly, the graphene suspended over gold nanovoids is deflected 4 - 5 nm by the STM tip when imaging at low bias voltages (U = 30 mV). Nanoindentation measurements performed by AFM show that the squeezing of graphene bubbles occurs at repulsive forces of 20 - 35 nN, and such forces can result in deflections of several nanometres in suspended graphene parts, respectively. Comparing the AFM and STM results, this study reveals that mechanical forces of the order of 10e-8 N occur between the STM tip and graphene under ambient imaging conditions and typical tunnelling parameters.

cond-mat.mes-hall

Mapping the nanomechanical properties of graphene suspended on silica nanoparticles

Using nanoparticles to impart extrinsic rippling in graphene is a relatively new method to induce strain and to tailor the properties of graphene. Here we study the structure and elastic properties of graphene grown by chemical vapour deposition and transferred onto a continuous layer of SiO2 nanoparticles with diameters of around 25 nm, prepared by Langmuir-Blodgett technique on Si substrate. We show that the transferred graphene follows only roughly the morphology induced by nanoparticles. The graphene membrane parts bridging the nanoparticles are suspended and their adhesion to the AFM tip is larger compared to that of supported graphene parts. These suspended graphene regions can be deformed with forces of the order of 10 nN. The elastic modulus of graphene was determined from indentation measurements performed on suspended membrane regions with diameters in the 100 nm range.

cond-mat.mes-hall

Moiré superlattices in strained graphene-gold hybrid nanostructures

Graphene-metal nanoparticle hybrid materials potentially display not only the unique properties of metal nanoparticles and those of graphene, but also additional novel properties due to the interaction between graphene and nanoparticles. This study shows that gold nanoislands can be used to tailor the local electronic properties of graphene. Graphene on crystalline gold nanoislands exhibits moiré superlattices, which generate secondary Dirac points in the local density of states. Conversely, the graphene covered gold regions undergo a polycrystalline to Au(111) phase transition upon annealing. Moreover, the nanoscale coexistence of moiré superlattices with different moiré periodicities has also been revealed. Several of these moiré periodicities are anomalously large, which cannot be explained by the standard lattice mismatch between the graphene and the topmost Au(111) layers. Density functional theory and molecular dynamics simulations show for the first time that in such cases the graphene and the interfacial metallic layer is strained, leading to distorted lattice constants, and consequently to reduced misfit. Room temperature charge localization induced by a large wavelength moiré pattern is also observed by scanning tunneling spectroscopy. These findings can open a route towards the strain engineering of graphene/metal interfaces with various moiré superlattices and tailored electronic properties for nanoscale information coding.

cond-mat.mes-hall

The structure and properties of graphene supported on gold nanoparticles

Graphene covered metal nanoparticles constitute a novel type of hybrid materials, which provide a unique platform to study plasmonic effects, surface-enhanced Raman scattering (SERS), and metal-graphene interactions at the nanoscale. Such a hybrid material is fabricated by transferring graphene grown by chemical vapor deposition onto closely spaced gold nanoparticles produced on a silica wafer. The morphology and physical properties of nanoparticle-supported graphene is investigated by atomic force microscopy, optical reflectance spectroscopy, scanning tunneling microscopy and spectroscopy (STM/STS), and confocal Raman spectroscopy. This study shows that the graphene Raman peaks are enhanced by a factor which depends on the excitation wavelength, in accordance with the surface plasmon resonance of the gold nanoparticles, and also on the graphene-nanoparticle distance which is tuned by annealing at moderate temperatures. The observed SERS activity is correlated to the nanoscale corrugation of graphene. STM and STS measurements show that the local density of electronic states in graphene is modulated by the underlying gold nanoparticles.

cond-mat.mes-hall

Skyrmion Motion Driven by Oscillating Magnetic Field

Magnetic skyrmion motion induced by an electric current has drawn much interest because of its application potential in next-generation magnetic memory devices. Recently, unidirectional skyrmion motion driven by an oscillating magnetic field was also demonstrated on large (20 micrometer) bubble domains with skyrmion topology. At smaller length scale which is more relevant to high-density memory devices, we here show by numerical simulation that a skyrmion of a few tens of nanometers could also be driven by high-frequency field oscillations but with the motion direction different from the tilted oscillating field direction. We found that high-frequency field for small size skyrmions could excite skyrmion resonant modes and that a combination of different modes would result in the final skyrmion motion with a helical trajectory. Because this helical motion depends on the frequency of the field, we can control both the speed and the direction of the skyrmion motion, which is a distinguishable characteristic compared with other methods.

cond-mat.mtrl-sci

Room temperature magnetic order on zigzag edges of narrow graphene nanoribbons

Magnetic order emerging in otherwise non-magnetic materials as carbon is a paradigmatic example of a novel type of s-p electron magnetism predicted to be of exceptional high-temperature stability. It has been demonstrated that atomic scale structural defects of graphene can host unpaired spins. However, it is still unclear under which conditions long-range magnetic order can emerge from such defect-bound magnetic moments. Here we propose that in contrast to random defect distributions, atomic scale engineering of graphene edges with specific crystallographic orientation, comprising edge atoms only from one sub-lattice of the bipartite graphene lattice, can give rise to a robust magnetic order. We employ a nanofabrication technique based on Scanning Tunneling Microscopy to define graphene nanoribbons with nanometer precision and well-defined crystallographic edge orientations. While armchair ribbons display quantum confinement gap, zigzag ribbons narrower than 7 nm reveal a bandgap of about 0.2 - 0.3 eV, which can be identified as a signature of interaction induced spin ordering along their edges. Moreover, a semiconductor to metal transition is revealed upon increasing the ribbon width, indicating the switching of the magnetic coupling between opposite ribbon edges from antiferromagnetic to ferromagnetic configuration. We found that the magnetic order on graphene edges of controlled zigzag orientation can be stable even at room temperature, raising hope for graphene-based spintronic devices operating under ambient conditions.

cond-mat.mes-hall