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Chao Lei

Publications and source records attributed to Chao Lei.

At least 37 records · Page 2Linked to original sources
arXiv2024

Symmetry, topology, and geometry: The many faces of the topological magnetoelectric effect

A delicate tension complicates the relationship between the topological magnetoelectric effect (TME) in three-dimensional (3D) $\mathbb{Z}_2$ topological insulators (TIs) and time-reversal symmetry (TRS). TRS underlies a particular $\mathbb{Z}_2$ topological classification of the electronic ground state of crystalline band insulators and the associated quantization of the magnetoelectric response coefficient calculated using bulk linear response theory but, according to standard symmetry arguments, simultaneously forbids a nonzero magnetoelectric coefficient in any physical finite-size system. This contrast between theories of magnetoelectric response in formal bulk models and in real finite-sized materials originates from the distinct approaches required to introduce notions of (electronic) polarization and orbital magnetization in these fundamentally different environments. In this work we argue for a modified interpretation of the bulk linear response calculations in non-magnetic $\mathbb{Z}_2$ TIs that is more plainly consistent with TRS, and use this interpretation to discuss the effect's observation - still absent over a decade after its prediction. Motivated by analytical results, we conjecture a type of microscopic bulk-boundary correspondence: a bulk insulator with (generalized) TRS supports a magnetoelectric coefficient that is purely itinerant (which is generically related to the geometry of the ground state) if and only if magnetic surface dopants are required for the TME to manifest in finite samples thereof. We conclude that in non-magnetic $\mathbb{Z}_2$ TIs the TME is activated by magnetic surface dopants, that the charge density response to a uniform dc magnetic field is localized at the surface and specified by the configuration of those dopants, and that the TME is qualitatively less robust against disorder than the integer quantum Hall effect.

cond-mat.mes-hall↗
arXiv2024

Epitaxially defined Luttinger liquids on MoS$_2$ bicrystals

A mirror twin boundary (MTB) in a transition metal dichalcogenide (TMD) monolayer can host one-dimensional electron liquid of a topological nature with tunable interactions. Unfortunately, the electrical characterization of such boundaries has been challenging due to the paucity of samples with large enough size and high quality. Here, we report an epitaxial growth of monolayer molybdenum disulfide (MoS$_2$) bicrystals with well-isolated MTBs that are tens of micrometers long. Conductance measurements of these MTBs exhibit power-law behaviors as a function of temperature and bias voltage up to room temperature, consistent with electrons tunneling into a Luttinger liquid. Transport measurements of two distinct types of MTBs reveal the critical role of the atomic-scale defects. This study demonstrates that MTBs in TMD monolayers provide an exciting new platform for studying the interplay between electronic interactions and topology.

cond-mat.mes-hall↗
arXiv2024

Generalized Planning for the Abstraction and Reasoning Corpus

The Abstraction and Reasoning Corpus (ARC) is a general artificial intelligence benchmark that poses difficulties for pure machine learning methods due to its requirement for fluid intelligence with a focus on reasoning and abstraction. In this work, we introduce an ARC solver, Generalized Planning for Abstract Reasoning (GPAR). It casts an ARC problem as a generalized planning (GP) problem, where a solution is formalized as a planning program with pointers. We express each ARC problem using the standard Planning Domain Definition Language (PDDL) coupled with external functions representing object-centric abstractions. We show how to scale up GP solvers via domain knowledge specific to ARC in the form of restrictions over the actions model, predicates, arguments and valid structure of planning programs. Our experiments demonstrate that GPAR outperforms the state-of-the-art solvers on the object-centric tasks of the ARC, showing the effectiveness of GP and the expressiveness of PDDL to model ARC problems. The challenges provided by the ARC benchmark motivate research to advance existing GP solvers and understand new relations with other planning computational models. Code is available at github.com/you68681/GPAR.

cs.AI↗
arXiv2023

The GUA-Speech System Description for CNVSRC Challenge 2023

This study describes our system for Task 1 Single-speaker Visual Speech Recognition (VSR) fixed track in the Chinese Continuous Visual Speech Recognition Challenge (CNVSRC) 2023. Specifically, we use intermediate connectionist temporal classification (Inter CTC) residual modules to relax the conditional independence assumption of CTC in our model. Then we use a bi-transformer decoder to enable the model to capture both past and future contextual information. In addition, we use Chinese characters as the modeling units to improve the recognition accuracy of our model. Finally, we use a recurrent neural network language model (RNNLM) for shallow fusion in the inference stage. Experiments show that our system achieves a character error rate (CER) of 38.09% on the Eval set which reaches a relative CER reduction of 21.63% over the official baseline, and obtains a second place in the challenge.

cs.CL↗
arXiv2023

Novelty and Lifted Helpful Actions in Generalized Planning

It has been shown recently that successful techniques in classical planning, such as goal-oriented heuristics and landmarks, can improve the ability to compute planning programs for generalized planning (GP) problems. In this work, we introduce the notion of action novelty rank, which computes novelty with respect to a planning program, and propose novelty-based generalized planning solvers, which prune a newly generated planning program if its most frequent action repetition is greater than a given bound $v$, implemented by novelty-based best-first search BFS($v$) and its progressive variant PGP($v$). Besides, we introduce lifted helpful actions in GP derived from action schemes, and propose new evaluation functions and structural program restrictions to scale up the search. Our experiments show that the new algorithms BFS($v$) and PGP($v$) outperform the state-of-the-art in GP over the standard generalized planning benchmarks. Practical findings on the above-mentioned methods in generalized planning are briefly discussed.

cs.AI↗
arXiv2023

Pressure tunable quantum anomalous Hall states in a topological antiferromagnet

Mechanical modulation of the lattice parameter can modify the electronic structure and manipulate the magnetic coupling of a material without introducing impurities. Inspired by success in pressure-controlled magnetism, we investigate the effect of hydrostatic pressure on quantized Chern states in the antiferromagnetic topological insulator MnBi2Te4, using transport as a probe. We show that pressure can enhance the robustness of quantum anomalous Hall (QAH) phases that are otherwise delicate in 7SL MnBi2Te4 and in the spin-flop (SF) state of 8SL MnBi2Te4. We explain our findings using a coupled Dirac cone model of MnBi2Te4, which identifies stronger hybridization between van der Waals layers as the driver of topological states. We further demonstrate that moderate pressures readily available in laboratory systems can provide reversible control of magnetic and topological phases. Our results reveal a strong connection between the mechanical engineering of band topology and magnetism.

cond-mat.mes-hall↗
arXiv2023

Ideal Weak Topological Insulator and Protected Helical Saddle Points

The paradigm of classifying three-dimensional (3D) topological insulators into strong and weak ones (STI and WTI) opens the door for the discovery of various topological phases of matter protected by different symmetries and defined in different dimensions. However, in contrast to the vast realization of STIs, very few materials have been experimentally identified as being close to WTI. Even amongst those identified, none exists with topological surface states (TSS) exposed in a global bulk band gap that is stable at all temperatures. Here we report the design and observation of an ideal WTI in a quasi-one-dimensional (quasi-1D) bismuth halide, Bi$_{4}$I$_{1.2}$Br$_{2.8}$ (BIB). Via angle-resolved photoemission spectroscopy (ARPES), we identify that BIB hosts TSS on the (100)$\prime$ side surface in the form of two anisotropic $π$-offset Dirac cones (DCs) separated in momentum while topologically dark on the (001) top surface. The ARPES data fully determine a unique side-surface Hamiltonian and thereby identify two pairs of non-degenerate helical saddle points and a series of four Lifshitz transitions. The fact that both the surface Dirac and saddle points are in the global bulk band gap of 195 meV, combined with the small Dirac velocities, nontrivial spin texture, and the near-gap chemical potential, qualifies BIB to be not only an ideal WTI but also a fertile ground for topological many-body physics.

cond-mat.mtrl-sci↗
arXiv2022

Anomalous Landau quantization in intrinsic magnetic topological insulators

The intrinsic magnetic topological insulators, Mn(Bi1-xSbx)2Te4, in their spin-aligned strong field configuration have been identified as a Weyl semimetal with single pair of Weyl nodes1-4. A direct consequence of the Weyl state is the layer-dependent Chern number (C) in thin film quantization. Previous reports in MnBi2Te4 thin films revealed the higher C states in the spin alignment by either increasing the film thickness5 or controlling chemical potential into electron doping6-8. A clear picture of the higher Chern states is still missing as the situation is complicated by the emerging of surface band Landau levels (LLs) in magnetic field. Here, we report a tunable layer-dependent of C= 1 state with the Sb substitutions by performing a detailed analysis of the quantization states in Mn(Bi1-xSbx)2Te4 dualgated devices, consistent with the calculations of the bulk Weyl point separations in the compounds. The observed Hall quantization plateaus for our thicker Mn(Bi1-xSbx)2Te4 films under strong magnetic fields can be interpreted from a theory of surface and bulk spin-polarized Landau levels spectrum in thin film magnetic topological insulators. Our results demonstrate that Mn(Bi1-xSbx)2Te4 thin films provide a highly tunable platform for probing the physics of the anomalous Landau quantization that is strongly sensitive to magnetic order.

cond-mat.mes-hall↗
arXiv2022

Visualizing the interplay of Dirac mass gap and magnetism at nanoscale in intrinsic magnetic topological insulators

In intrinsic magnetic topological insulators, Dirac surface state gaps are prerequisites for quantum anomalous Hall and axion insulating states. Unambiguous experimental identification of these gaps has proved to be a challenge, however. Here we use molecular beam epitaxy to grow intrinsic MnBi2Te4 thin films. Using scanning tunneling microscopy/spectroscopy, we directly visualize the Dirac mass gap and its disappearance below and above the magnetic order temperature. We further reveal the interplay of Dirac mass gaps and local magnetic defects. We find that in high defect regions, the Dirac mass gap collapses. Ab initio and coupled Dirac cone model calculations provide insight into the microscopic origin of the correlation between defect density and spatial gap variations. This work provides unambiguous identification of the Dirac mass gap in MnBi2Te4, and by revealing the microscopic origin of its gap variation, establishes a material design principle for realizing exotic states in intrinsic magnetic topological insulators.

cond-mat.mes-hall↗
arXiv2021

Quantum Anomalous Hall Effect in Perfectly Compensated Collinear Antiferromagnetic Thin Films

We show that the quantum anomalous Hall effect almost always occurs in magnetic topological insulator thin films whenever the top and bottom surface layer magnetizations are parallel, independent of the interior layer magnetization configuration. Using this criteria we identify structures that have a quantum anomalous Hall effect even though they have collinear magnetic structures with no net magnetization, and discuss strategies for realizing these interesting magnetic states experimentally.

cond-mat.mes-hall↗
arXiv2021

Large Anomalous Hall Effect in Topological Insulators Proximitized by Collinear Antiferromagnets

CrSb is an attractive material for room-temperature antiferromagnetic spintronic applications because of its high Néel temperature $\sim$700 K and semi-metallic character. We study the magnetic properties of CrSb bilayers on few-layer topological insulator thin films using \emph{ab initio} density functional theory. We find that the intrinsic parts of the total anomalous Hall conductivities of the thin films are non-zero, and approximately quantized. The Néel temperature of CrSb bilayers on few-layer topological insulator thin films is found to be approximately two times larger than that of an isolated CrSb thin film. Due to the low Fermi level density of states of CrSb, Hall quantization might be achievable by introducing disorder. CrSb bilayers on topological insulator surfaces are therefore attractive candidates for high-temperature quantum anomalous Hall effects.

cond-mat.mes-hall↗
arXiv2021

Silicon Donor Array as a Disordered One-Dimensional Electron Gas

Donors in silicon can now be positioned with an accuracy of about one lattice constant, making it possible in principle to form donor arrays for quantum computation or quantum simulation applications. However the multi-valley character of the silicon conduction band combines with central cell corrections to the donor state Hamiltonian to translate atomic scale imperfections in donor placement into strongly disordered inter-donor hybridization. We present a simple model that is able to account accurately for central-cell corrections, and use it to assess the impact of donor-placement disorder on donor array properties in both itinerant and localized limits.

cond-mat.mes-hall↗
arXiv2021

Mirror Symmetry Breaking and Lateral Stacking Shifts in Twisted Trilayer Graphene

We construct a continuum model of twisted trilayer graphene using {\it ab initio} density-functional-theory calculations, and apply it to address twisted trilayer electronic structure. Our model accounts for moiré variation in site energies, hopping between outside layers and within layers. We focus on the role of a mirror symmetry present in ABA graphene trilayers with a middle layer twist. The mirror symmetry is lost intentionally when a displacement field is applied between layers, and unintentionally when the top layer is shifted laterally relative to the bottom layer. We use two band structure characteristics that are directly relevant to transport measurements, the Drude weight and the weak-field Hall conductivity, and relate them via the Hall density to assess the influence of the accidental lateral stacking shifts currently present in all experimental devices on electronic properties, and comment on the role of the possible importance of accidental lateral stacking shifts for superconductivity in twisted trilayers.

cond-mat.mes-hall↗
arXiv2021

Magnetoelectric Response of Antiferromagnetic Van der Waals Bilayers

We predict that antiferromagnetic bilayers formed from van der Waals (vdW) materials, like bilayer CrI$_3$, have a strong magnetoelectric response that can be detected by measuring the gate voltage dependence of Faraday or Kerr rotation signals, total magnetization, or anomalous Hall conductivity. Strong effects are possible in single-gate geometries, and in dual-gate geometries that allow internal electric fields and total carrier densities to be varied independently. We comment on the reliability of density-functional-theory estimates of interlayer magnetic interactions in van der Waals bilayers, and on the sensitivity of magnetic interactions to pressure that alters the spatial separation between layers.

cond-mat.mes-hall↗
arXiv2021

Gate-Tunable Quantum Anomalous Hall Effects in MnBi$_2$Te$_4$ Thin Films

The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBi$_2$Te$_4$. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that both axion insulator/semimetal and Chern insulator/semimetal transitions can be driven by electrical gate fields on the $\sim 10$ meV/nm scale. This effect is described by combining a simplified coupled-Dirac-cone model of multilayer thin films with Schr{ö}dinger-Poisson self-consistent-field equations.

cond-mat.mes-hall↗
arXiv2020

Magnetized Topological Insulator Multilayers

We discuss the magnetic and topological properties of bulk crystals and quasi-two-dimensional thin films formed by stacking intrinsic magnetized topological insulator ( for example Mn(Sb$_{x}$Bi$_{1-x}$)$_2$X$_4$ with X = Se,Te, including MnBi$_2$Te$_4$) septuple layers and topological insulator quintuple layers in arbitrary order. Our analysis makes use of a simplified model that retains only Dirac-cone degrees of freedom on both surfaces of each septuple or quintuple layer. We demonstrate the model's applicability and estimate its parameters by comparing with {\it ab initio } density-functional-theory(DFT) calculations. We then employ the coupled Dirac cone model to provide an explanation for the dependence of thin-film properties, particularly the presence or absence of the quantum anomalous Hall effect, on film thickness, magnetic configuration, and stacking arrangement, and to comment on the design of Weyl superlattices.

cond-mat.mes-hall↗
arXiv2020

Majorana Zero Modes in Cylindrical Semiconductor Quantum Wire

We study Majorana zero modes properties in cylindrical cross-section semiconductor quantum wires based on the $k \cdot p$ theory and a discretized lattice model. Within this model, the influence of disorder potentials in the wire and amplitude and phase fluctuations of the superconducting order-parameter are discussed. We find that for typical wire geometries, pairing potentials, and spin-orbit coupling strengths, coupling between quasi-one-dimensional sub-bands is weak, low-energy quasiparticles near the Fermi energy are nearly completely spin-polarized, and the number of electrons in the active sub-bands of topological states is small.

cond-mat.mes-hall↗