arXiv subjects

Chao-xing Liu

Publications and source records attributed to Chao-xing Liu.

4 recordsLinked to original sources

arXiv2026

Ideal Topological Flat Bands in Two-dimensional Moiré Heterostructures with Type-II Band Alignment

Topological flat bands play an essential role in inducing exotic interacting physics, ranging from fractional Chern insulators to superconductivity, in moiré materials. In this work, we propose a design principle for realizing topological flat bands with "ideal quantum geometry", namely the trace of Fubini-Study metric equals to the Berry curvature, in a class of two-dimensional moiré heterostructures with type-II band alignment. We first introduce a moiré Chern-band model to describe this system and show that topological flat bands can be realized in this model when the moiré superlattice potential is stronger than the type-II atomic band gap of the heterostructure. Next, we map this model into a topological heavy fermion model that consists of a localized orbital for "f-electron" and a conducting band for "c-electron". We find that both the flatness and quantum geometry of the flat band in the topological heavy fermion model depend on the energy gap between c-electron and f-electron bands at $Γ$ which is experimentally controllable via external gate voltages. This tunability will allow us to realize an ideal topological flat band with zero band-width and ideal quantum geometry. Our design strategy of topological flat bands is insensitive of twist angle. We also discuss possible material candidates for moiré heterostructures with type-II band alignment.

cond-mat.mes-hall↗

arXiv2020

Topological orders competing for the Dirac surface state in FeSeTe surfaces

FeSeTe has recently emerged as a leading candidate material for the two-dimensional topological superconductivity (TSC). Two reasons for the excitement are the high $T_c$ of the system and the fact that the Majorana zero modes (MZMs) inside the vortex cores live on the exposed surface rather than at the interface of a heterostructure as in the proximitized topological insulators. However, the recent scanning tunneling spectroscopy data have shown that, contrary to the theoretical expectation, the MZM does not exist inside every vortex core. Hence there are ``full'' vortices with MZMs and ``empty'' vortices without MZMs. Moreover the fraction of ``empty'' vortices increase with an increase in the magnetic field. We propose the possibility of two distinct gapped states competing for the topological surface states in FeSeTe: the TSC and half quantum anomalous Hall (hQAH). The latter is promoted by magnetic field through the alignment of magnetic impurities such as Fe interstitials. When hQAH takes over the topological surface state, the surface will become transparent to scanning tunneling microscopy and the nature of the vortex in such region will appear identical to what is expected of the vortices in the bulk, i.e., empty. Unmistakable signature of the proposed mechanism for empty vortices will be the existance of chiral Majorana modes(CMM) at the domain wall between a hQAH region and a TSC region. Such CMM should be observable by observing local density of states along a line connecting an empty vortex to a nearby full vortex.

cond-mat.supr-con↗

arXiv2017

Engineering the breaking of time-reversal symmetry in gate-tunable hybrid ferromagnet/topological insulator heterostructures

Studying the influence of breaking time-reversal symmetry on topological insulator surface states is an important problem of current interest in condensed matter physics and could provide a route toward proof-of-concept spintronic devices that exploit spin-textured surface states. Here, we develop a new model system for studying the effect of breaking time-reversal symmetry: a hybrid heterostructure wherein a ferromagnetic semiconductor Ga1-xMnxAs, with an out-of-plane component of magnetization, is cleanly interfaced with a three-dimensional topological insulator (Bi,Sb)2(Te,Se)3 by molecular beam epitaxy. Lateral electrical transport in this bilayer is dominated by conduction through the topological insulator whose conductivity is a few orders of magnitude higher than that of the highly resistive ferromagnetic semiconductor with a low Mn concentration. Electrical transport measurements of a top-gated heterostructure device reveal a crossover from weak anti-localization (negative magneto-conductance) to weak localization (positive magneto-conductance) as the temperature is lowered or as the chemical potential approaches the Dirac point. This is accompanied by a systematic emergence of an anomalous Hall effect. These results are interpreted in terms of the opening of a gap at the Dirac point as a result of the exchange coupling between the topological insulator surface state and the ferromagnetic ordering in the Ga1-xMnxAs layer. Our study shows that this hybrid system is well suited to explore topological quantum phenomena and to realize proof-of-concept demonstrations of topological spintronic devices at cryogenic temperatures.

cond-mat.mes-hall↗

arXiv2014

Spin Texture and Mirror Chern number in Hg-Based Chalcogenides

The unique feature of surface states in topological insulators is the so-called "spin-momentum locking", which means that electron spin is oriented along a fixed direction for a given momentum and forms a texture in the momentum space. In this work, we study spin textures of two typical topological insulators in Hg-Based Chalcogenides, namely HgTe and HgS, based on both the first principles calculation and the eight band Kane model. We find opposite helicities of spin textures between these two materials, originating from the opposite signs of spin-orbit couplings. Furthermore, we reveal that different mirror Chern numbers between HgTe and HgS characterize different topological natures of the systems with opposite spin textures and guarantee the existence of gapless interface states.

cond-mat.mes-hall↗